Datasheet KSC5321 Datasheet (Fairchild Semiconductor)

High Voltage and High Reliability

• High speed Switching

• Wide Safe Operating Area

KSC5321

1

1.Base 2.Collector 3.Emitter

TO-220

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

I

BP

P

C

T

J

T

STG

* Pulse Test: Pulse Width = 5ms, Duty Cycle≤10%

Collector-Base Voltage 800 V Collector-Emitter Voltage 500 V Emitter-Base Voltage 7 V Collector Current (DC) 5 A *Collector Current (Pulse) 10 A Base Current (DC) 2 A *Base Current (Pulse) 4 A Power Dissipation(TC=25°C) 100 W Junction Temperature 150 °C Storage T emperature - 55 ~ 150 °C

Thermal Characteristics

Symbol Characteristics Rating Unit

R

θjc

R

θja

Thermal Resistance Junction to Case 1.25 °C/W

TC=25°C unless otherwise noted

Junction to Ambient 62.5

KSC5321

Electrical Characteristics T

=25°C unless otherwise noted

C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE1

h

FE2

(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.0 V

V

CE

(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.5 V

V

BE

f

T

C

ob

C

ib

t

ON

t

STG

t

F

t

ON

t

STG

t

F

Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 - - V Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 - - V Emitter-Base Breakdown Voltage IC =1mA, IC = 0 7 - - V Collector Cut-off Current V Emitter Cut-off Cu rr en t V DC Current Gain V

= 800V, IE = 0 - - 100 µA

CB

= 7V , IC = 0 - - 10 µA

EB

= 5V, IC = 0.6A

CE

= 5V, IC = 3A

V

CE

15

8

-

40

-

Current Gain bandwidth Product VCE= 10V, IC = 0.6A - 14 - MHz Output Capacitance V Input Capacitance V Turn ON Time V Storage Time - 6.5 µs Fall Time - - 0.3 µs Turn ON Time V Storage Time - - 3.0 µs Fall Time - - 0.3 µs

= 10V, IE = 0, f = 1 M H z - 65 100 pF

CB

= 7V , IC = 0 , f = 1 M H z - 1400 2000 pF

EB

= 125V, IC = 1A

CC

I

= -IB2 = 0.2A

B1

= 125Ω

R

L

= 250V, IC = 4A

CC

I

= 0.8A, IB2 = -1.6A

B1

= 62.5Ω

R

L

-- 0.5µs

Typical Characteristics

KSC5321

5

= 700mA

B

I

4

3

2

[A], COLLECTOR CURRENT

1

C

I

0

0246810

= 600mA

I

B

= 500mA

I

B

I

B

= 400mA

= 300mA

I

B

= 200mA

I

B

= 100mA

I

B

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC current Gain

10

1

0.1

(sat)[V], SATURATION VOLTAGE

CE

IC = 5 I

VBE(sat)

VCE(sat)

100

10

, DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

VCE = 5V

IC[A], COLLECTOR CURRENT

B

1000

100

10

[pF], CAPACITANCE

ob

C

f = 1MHz

= 0

I

E

(sat), V

BE

V

0.01

0.01 0.1 1 10

IC[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

10

1

[µs], TIME

F

, t

STG

, t

0.1

ON

t

0.01

0.1 1 10

IC[A], COLLECTOR CURRENT

Figure 5. Switching Time Figure 6. Safe Operating Area

1

1 10 100 1000

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 4. Collector Output Capacitance

t

STG

t

ON

t

F

100

10

1

0.1

[A], COLLECTOR CURRENT

C

I

0.01 1 10 100 1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

Pulse

DC

50µs

100

µ

s

1ms

10ms

Rev. A, February 2000

KSC5321

Typical Characteristics

100

10

1

0.1

[A], COLLECTOR CURRENT

C

I

0.01 10 100 1000 10000

VCE[V], COLLECTOR-EMITTER VOLTAGE

(Continued)

IB2 = -1A

µ

L = 200

H

120

100

80

60

40

[W], POWER DISSIPATION

C

20

P

0

0 255075100125150175

TC[oC], CASE TEMPERATURE

Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating

Rev. A, February 2000

Package Demensions

±0.10

(1.70)

1.30

±0.20

9.20 (1.46)

9.90 (8.70)

ø3.60

TO-220

±0.20

±0.10

(45°)

(3.70)(3.00)

±0.10

2.80

±0.20

15.90

18.95MAX.

4.50

1.30

±0.20

+0.10 –0.05

KSC5321

±0.20

13.08

(1.00)

1.27

2.54TYP

[2.54

±0.10

±0.20

]

10.00

±0.20

1.52

±0.10

0.80

±0.10

2.54TYP

±0.20

[2.54

±0.30

10.08

+0.10

0.50

–0.05

2.40

±0.20

]

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™

2

E

CMOS™ FACT™ FACT Quiet Series™

®

FAST FASTr™ GTO™

HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench

®

QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6

SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status D e finition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.