Page 1
KSC5086
KSC5086
HIgh Definition Color Display Horizontal
Deflection Output
Equivalent Circuit
C
(Damper Diode Built In)
• High Collector-Base Voltage : BV
• High Speed Switching : t
=0.1µs (Typ.)
F
CBO
=1500V
B
TO-3PF
50Ω typ.
1
1.Base 2.Collector 3.Emitter
E
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 6 V
Collector Current (DC) 7 A
Collector Current (Pulse) 16 A
Collector Dissipation (TC=25°C) 50 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. T yp. Max. Units
I
CES
ICBO
I
EBO
VEBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 1.2A 5 V
V
CE
(sat) Base-Em itter Satura tion Voltage IC = 5A, IB = 1.2A 1.5 V
V
BE
VF
tF
Collector Cut-off Current (VBE=0) V
Collector Cu-toff Current VCB=800V, IE=0 10 µA
Emitter Cut-off Current V
Base-Emitter Breakdown Voltage IE = 250mA, IC = 0 6 V
DC Current Gain V
Damper Diode Turn On Voltage IF= 6A 2 V
Fall Time V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 1400V, R
CE
= 4V, IC = 0 40 200 mA
EB
= 5V , IC = 1.0A 8
CE
= 200V, IC = 4A
CC
I
= 0.8A, IB2 = -1.6A
B1
= 50Ω
R
L
= 0 1 mA
BE
0.2 µs
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 2
Typical Characteristics
KSC5086
10
8
6
4
[A], COLLECTOR CURRENT
2
C
I
0
0246810
IB = 0A
IB = 2A
IB = 1.8A
IB = 1.6A
IB = 1.4A
IB = 1.2A
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
IC/IB=5
IC/IB=3
IB = 1A
IB = 800mA
IB = 600mA
IB = 400mA
IB = 200mA
100
VCE = 5V
20
10
5
, DC CURRENT GAIN
FE
h
1
0.1 1 10
IC[A], COLLECTOR CURRENT
10
9
8
7
6
5
4
3
[A], COLLECTOR CURRENT
2
C
I
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VCE = 5V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
10
1
(µs), FALL TIME
f
t
(µs), STORAGE TIME
stg
t
0.1
-0.1 -1 -10
Figure 5. Switching Time Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
t
stg
t
f
IB2[A], BASE CURRENT
RESISTIVE LOAD
=200V
V
CC
=4A
I
C
=0.8A
I
B1
100
10
1
0.1
[A], COLLECTOR CURRENT
C
I
SINGLE PULSE
TC=25OC
0.01
1 10 100 1000 10000
100
300
µ
s
µ
s
10ms
1ms
DC
VCE[V], COLLECTOR-EMITTER VOLTAGE
Rev. A, February 2000
Page 3
Typical Characteristics
(Continued)
KSC5086
100
10
1
[A], COLLECTOR CURRENT
IC=5IB1 = 5I
C
I
0.1
B2
L=500µH
SINGLE PULSE
10 100 1000 10000
IB2=-1A
CONSTAN T
VCE[V], COLLECTOR-EMITTER VOLTAGE
80
70
60
50
40
30
20
[W], POWER DISSIPATION
C
P
10
0
0 25 50 75 100 125 150 175 200
TC[oC], TEMPERATURE
Figure 1. Reverse Bias Safe Operating Area Figure 2. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Page 4
Package Demensions
±0.20
4.50
15.50
TO-3PF
±0.20
ø3.60
±0.20
±0.20
10.00
10°
5.50
3.00
(1.50)
KSC5086
±0.20
±0.20
±0.20
26.50
±0.20
14.80
±0.20
±0.20
14.50
16.50
2.00
2.00
4.00
0.75
5.45TYP
[5.45
±0.20
3.30
±0.20
±0.20
±0.20
+0.20
–0.10
±0.30
±0.20
2.00
]
±0.20
2.00
2.00
5.45TYP
[5.45
±0.20
2.50
±0.20
±0.30
±0.20
5.50
]
0.85
±0.20
16.50
±0.03
0.90
±0.20
1.50
2.00
3.30
+0.20
–0.10
±0.20
±0.20
±0.20
23.00
±0.20
22.00
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 5
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not intended to be an exhaustive list of all such trademarks.
ACEx™
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2
E
CMOS™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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