Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor KSC5031
DESCRIPTION
·High Breakdown Voltage : V
(BR)CBO
·Fast Switching speed
·Wide Area of Safe Operation
·High Reliability
APPLICATIONS
·Designed for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(T
= 1100V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
stg
Collector-Base Voltage 1100 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 8 A
Collector Current-Peak 25 A
B Base Current-Continuous 4 A
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
140 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor KSC5031
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
Collector-Emitter Breakdown Voltage IC=5mA; RBE=∞ 800 V
= 4A; IB1= 0.4A;IB2= -0.8A
I
Collector-Emitter Sustaining Voltage
C
L= 1mH, Clamped
800 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1100 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 2.0 V
Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V
Collector Cutoff Current VCB= 800V; IE= 0 10 μA
Emitter Cutoff Current VEB= 5V; IC= 0 10 μA
DC Current Gain IC=0.6A ; VCE= 5V 10 40
DC Current Gain IC= 3A ; VCE= 5V 8
Output Capacitance
I
= 0; VCB= 10V; f
E
= 1.0MHz
test
155 pF
f
T
Current-Gain—Bandwidth Product IC= 0.6A; VCE= 10V 15 MHz
Switching times
t
on
t
stg
t
f
Turn-on Time 0.5 μs
Storage Time 3.0 μs
Fall Time
IC= 6A , IB1= 1.2A; IB2= -2.4A
RL= 66.7Ω; VCC= 400V
0.3 μs
h
Classifications
FE-1
N R O
10-20 15-30 20-40
isc Website：www.iscsemi.cn
2
Loading...