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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors KSC5021
DESCRIPTION ·
·With TO-220C package
·High voltage and high reliability
·High speed switching
·Wide area of safe operation
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICM Collector current-Peak 10 A
IB Base current 2 A
Collector-base voltage Open emitter 800 V
Collector-emitter voltage Open base 500 V
Emitter-base voltage Open collector 7 V
℃)
T
PC Collector dissipation
Tj Junction temperature 150
T
Storage temperature -55~150
stg
=25℃
C
50 W
℃
℃
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors KSC5021
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=5mA ;IB=0 500 V
Collector-base breakdown voltage IC=1mA; IE=0 800 V
Emitter-base breakdown voltage IE=1mA;IC=0 7 V
Collector-emitter saturation voltage IC=3A ;IB=0.6A 1.0 V
Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V
Collector cut-off current VCB=500V ;IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 10 μA
DC current gain IC=0.6A ; VCE=5V 15 50
DC current gain IC=3A ; VCE=5V 8
fT Transition frequency IC=0.6A ; VCE=10V 18 MHz
Cob Collector output capacitance IE=0;f=1MHz ; VCB=10V 80 pF
Switching times
ton Turn-on time 0.5 μs
ts Storage time 3.0 μs
tf Fall time
IC=5IB1=-2.5IB2=4A
=200V;RL=50Ω
V
CC
0.3 μs
h
Classifications
FE-1
R O Y
15-30 20-40 30-50
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors KSC5021
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors KSC5021
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