Page 1
KSC2982
NPN Epitaxial Silicon Transistor
Strobe Flash & Medium Power Amplifier
• Excellent h
• Low Collector-Emitter Saturation Voltage : V
• Collector Dissipation : P
Linearity : h
FE
1
=140 ~ 600
FE1
=1~2W in Mounted on Ceramic Board
C
1. Base 2. Collector 3. Emitter
SOT-89
(sat)=0.5V
CE
Marking
29 82
PY WW
Weekly code
Year c od e
hFE grage
KSC2982 NPN Epitaxial Silicon Transistor
July 2005
Absolute Maximum Ratings
Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CES
V
CEO
V
Emitter Base Voltage 6 V
EBO
I
C
I
Collector Current (Pulse) * 4 A
CP
I
B
I
BP
P
C
PC*
T
J
T
STG
* PW ≤ 10ms, Duty Cycle ≤ 30%
Mounted on Ceramic Board (250mm
Collector-Base Voltage 30 V
Collector-Emitter Voltage 30 V
Collector-Emitter Voltage 10 V
Collector Current (DC) 2 A
Base Current (DC) 0.4 A
Base Current (Pulse) * 0.8 A
Collector Power Dissipation 500
1,000
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
2
x 0.8mm)
mW
mW
©2005 Fairchild Semiconductor Corporation
KSC2982 Rev. B3
1
www.fairchildsemi.com
Page 2
KSC2982 NPN Epitaxial Silicon Transistor
Electrical Characteristics
Ta = 25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 50mA 0.2 0.5 V
V
CE
V
(on) Base-Emitter On Voltage V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 10 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 6 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
= 30V, IE = 0 100 nA
CB
= 6V, IC = 0 100 nA
BE
= 1V, IC = 0.5A
CE
V
= 1V, IC = 2A
CE
= 1V, IC = 2A 0.86 1.5 V
CE
= 1V, IC = 2A 150 MHz
CE
= 10V, IE = 0, f = 1MHz 27 pF
CB
140
70 140
600
hFE Classification
Classification A B C D
h
FE1
140 ~ 240 200 ~ 330 300 ~ 450 420 ~ 600
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
2982 KSC2982 SOT-89 13” -- 4,000
KSC2982 Rev. B3
2
www.fairchildsemi.com
Page 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
4
IB = 60mA
IB = 25mA
IB = 15mA
3
IB = 10mA
1,000
KSC2982 NPN Epitaxial Silicon Transistor
VCE=1V
2
100
IB = 5mA
1
[A], COLLECTOR CURRENT
C
I
0
01234
IB = 0mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. DCollector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
IC=10 I
B
1.6
1.2
M
o
u
n
t
e
d
0.8
0.4
[W], POWER DISSIPATION
C
P
0.0
0 50 100 150 200
o
n
TC[oC], CASE TEMPERATURE
C
e
r
a
m
i
c
B
o
a
r
d
(
2
5
0
m
m
2
×
0
.
8
m
m
)
Figure 5. Safe Operating Area Figure 6. Power Derating
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
0.1 1 10 100
KSC2982 Rev. B3
IC MAX. (Pulse)
IC MAX. ( DC)
VCE[V], COLLECTOR-EMITTER VOLTAGE
TA=25oC
1
0
m
1
0
0
m
s
Single Pulse
s
MAX.
CEO
V
1.6
1.2
0.8
0.4
[W], POWER DISSIPATION
C
P
0.0
0 50 100 150 200
3
M
o
u
n
t
e
d
o
n
C
e
r
a
m
i
c
B
o
a
r
d
(
2
5
0
m
m
T
[oC], CASE TEMPERATURE
2
×
0
.
8
m
m
)
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Page 4
Mechanical Dimensions
4.50
±0.20
SOT-89
1.50
KSC2982 NPN Epitaxial Silicon Transistor
±0.20
0.50
1.65
±0.10
1.50 TYP 1.50 TYP
±0.10
C0.2
0.40
±0.10
(0.50)
±0.20
2.50
(1.10)
±0.20
4.10
0.40
(0.40)
+0.10
–0.05
KSC2982 Rev. B3
Dimensions in Millimeters
4
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Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
KSC2982 NPN Epitaxial Silicon Transistor
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
5
KSC2982 Rev. B3
Rev. I16
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