Page 1
KSC2881
NPN Epitaxial Silicon Transistor
Power Amplifier
• Collector-Emitter Voltage : V
• Current Gain Bandwidth Productor : f
• Collector Dissipation : P
• Complement to KSA1201
1
1. Base 2. Collector 3. Emitter
=120V
CEO
=120MHz
T
=1~2W in Mounted on Ceramic Board
C
SOT-89
Marking
28 81
PY WW
Weekly code
Year code
hFE grage
KSC2881 NPN Epitaxial Silicon Transistor
July 2005
Absolute Maximum Ratings
Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
PC*
T
J
T
STG
* Mounted on Ceramic Board (250mm
Electrical Characteristics
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 5 V
Collector Current 800 mA
Base Current 160 mA
Collector Power Dissipation 500
1,000
mW
mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
2
x 0.8mm)
Ta = 25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA 1.0 V
CE
V
(on) Base-Emitter On Voltage V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC = 10µA, IB = 0 120 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 5 V
Collector Cut-off Current V
= 120V, IE = 0 100 nA
CB
Emitter Cut-off Current VBE = 5V, IC = 0 100 nA
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
= 5V, IC = 100mA 80 240
CE
= 5V, IC = 500mA 1.0 V
CE
= 5V, IC = 100mA 120 MHz
CE
= 10V, IE = 0, f = 1MHz 30 pF
CB
©2005 Fairchild Semiconductor Corporation
KSC2881 Rev. B2
1
www.fairchildsemi.com
Page 2
hFE Classification
Classification O Y
h
FE
80 ~ 160 120 ~ 240
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
2881 KSC2881 SOT-89 13” -- 4,000
KSC2881 NPN Epitaxial Silicon Transistor
KSC2881 Rev. B2
2
www.fairchildsemi.com
Page 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. Base-Emitter On Voltage
KSC2881 NPN Epitaxial Silicon Transistor
0.8
IB = 50mA
0.6
0.4
0.2
[mA], COL LECTOR CURRENT
C
I
0.0
0 4 8 12 16
IB = 20mA
IB = 10mA
IB = 5mA
IB = 3mA
IB = 2mA
IB = 1mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
1.0
0.8
0.6
0.4
0.2
[mA], COLLECTOR CURRENT
C
I
0.0
0.0 0.2 0.4 0.6 0.8 1.0
VBE[mV], SATURATION VO LTAGE
VCE = 5V
Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage
1000
VCE = 5 V
100
1
0.1
IC = 10 I
B
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
IC[mA], COLLECTOR CURRENT
(sat) [V], SATURATION VOLTAGE
CE
V
0.01
1 10 100 1000
IC [mA], COLLECTOR CURRENT
Figure 5. Power Derating Figure 6. Safe Operating Area
1.6
1.2
Mounted on Ceramic Board (250 mm2 x 0.8 mm)
0.8
0.4
[W], POWER DISSIPATION
C
P
0.0
0 50 100 150 200
Ta [oC], AMBIE NT TEMPERATURE
10000
IC MAX. (Pulse)
1000
IC MAX. (DC)
100
10
[mA], COLLECTOR CURRENT
C
I
1
0.1 1 10 100 1000
10 ms
100 ms
VCE [V], COLLECTOR-EMITTER VOLTAGE
Ta = 25oC
Single Pulse
1 ms
KSC2881 Rev. B2
3
www.fairchildsemi.com
Page 4
Mechanical Dimensions
4.50
±0.20
SOT-89
1.50
KSC2881 NPN Epitaxial Silicon Transistor
±0.20
0.50
1.65
±0.10
1.50 TYP 1.50 TYP
±0.10
C0.2
0.40
±0.10
(0.50)
±0.20
2.50
(1.10)
±0.20
4.10
0.40
(0.40)
+0.10
–0.05
KSC2881 Rev. B2
Dimensions in Millimeters
4
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Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
KSC2881 NPN Epitaxial Silicon Transistor
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
5
KSC2881 Rev. B2
Rev. I16
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