Page 1
KSC2787
FM/AM RF AMP, MIX, CONV, OSC, IF
• Collector-Emitter Voltage : V
• High Current Gain Bandwidth Product : f
• Low Output Capacitance : C
=30V
CEO
=2.0pF (TYP)
ob
=300MHz (TYP)
T
KSC2787
1
TO-92S
1.Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 50 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 5 V
Collector Current 50 mA
Collector Power Dissipation 250 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(on) Base-Emitter On Voltage VCE=6V, IC=1mA 0.67 0.75 V
V
BE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.08 0.3 V
V
CE
f
T
C
ob
Collector-Base Breakdown Voltage IC=10µA, IE=0 50 V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 30 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 V
Collector Cut-off Current VCB=50V, IE=0 0.1 µA
Emitter Cut-off Current VEB=5V, IC=0 0.1 µA
DC Current Gain VCE=6V, IC=1mA 40 240
Current Gain Bandwidth Product VCE=6V, IC=1mA 150 300 MHz
Output Capacitance VCB=6V, IE=0, f=1MHz 2.0 2.5 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification R O Y
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
40 ~ 80 70 ~ 140 120 ~ 240
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Typical Characteristics
KSC2787
[mA], COLLECTOR CURRENT
C
I
1000
100
10
1
0.1
0.2 0.4 0.6 0.8 1.0 1.2
VBE[mV], SATURATION VOLTAGE
16
12
8
4
[mA], COLLECTOR CURRENT
C
I
0
0 4 8 12 16 20 24
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB = 70µA
IB = 60µA
IB = 50µA
IB = 40µA
IB = 30µA
IB = 20µA
IB = 10µA
Figure 1. Static Characteristics Figure 2. Base-Emitter On Voltage
1000
100
, DC CURRENT GAIN
FE
h
10
0.1 1 10 100
IC [mA], COLLECTOR CURRENT
VCE = 6V
10
1
0.1
(sat) [V], SATURATION VOLTAGE
BE
(sat), V
CE
0.01
V
0.1 1 10 100
IC [mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
VCE = 6V
IC = 10 I
B
Figure 3. DC Current Gain Figure 4. Saturation Voltage
1000
VCE = 6V
100
10
0.1 1 10 100
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC [mA], COLLECTOR CURRENT
©2002 Fairchild Semiconductor Corporation
Figure 5. f
10
Cib
1
[pF], OUTPUT CAPACITANCE
ob
C
0.1
0.1 1 10 100
f = 1MHz
= 0
I
E
Cob
VCB[V], COLLECTOR-BASE VOLTAGE
- I
T
C
Figure 6. Output Capacit a nc e
Rev. A2, September 2002
Page 3
Package Dimensions
4.00
(1.10)
0.66 MAX.
±0.20
TO-92S
±0.20
3.70
±0.30
2.31
KSC2787
±0.20
14.47
0.49
±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
3.72
2.86
±0.20
1.27TYP
±0.20
±0.10
0.77
0.35
+0.10
–0.05
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Page 4
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®
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C™
I
Across the board. Around the world.™
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®
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Form ative or In
Design
Preliminary First Production This dat asheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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