Page 1
KSC2785
Audio Frequency Amplifier & High
Frequency OSC.
• Complement to KSA1175
• Collector-Base Voltage : V
CBO
=60V
KSC2785
1
1.Emitter 2. Collector 3. Base
TO-92S
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 5 V
Collector Current 150 mA
Collector Power Dissipation 250 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.15 0.3 V
V
CE
f
T
C
ob
NF Noise Figure V
Collector-Base Breakdown Voltage IC=100µA, IE=0 60 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 50 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 V
Collector Cut-off Current VCB=40V, IE=0 0.1 µA
Emitter Cut-off Current VEB=3V, IC=0 0.1 µA
DC Current Gain VCE=6V, IC=1.0mA 70 700
Current Gain Bandwidth Product VCE=6V, IC=10mA 300 MHz
Output Capacitance VCB=6V, IE=0, f=1MHz 2.5 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=6, IC=0.5mA
CE
f=1KHz, R
=500Ω
S
4.0 dB
hFE Classification
Classification O Y G L
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700
Page 2
Typical Characteristics
KSC2785
100
IB = 400µA
80
60
40
20
[mA], COLLECTOR CURRENT
C
I
0
048121620
IB = 350µA
IB = 300µA
IB = 250µA
IB = 200µA
IB = 150µA
IB = 100µA
IB = 50µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics Figure 2. Base-Emitter On Voltage
VCE = 6V
, DC CURRENT GAIN
FE
h
10000
1000
100
100
VCE = 6V
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE [V], BASE-EMITTER VOLTAGE
1000
VCE = 6V
100
10
10
1 10 100 1000
IC [mA], COLLECTOR CURRENT
Figure 3. DC Current Gain Figure 4. f
10000
1000
100
(sat)[mV], SATURATION VOLTAGE
CE
(sat), V
BE
V
10
1 10 100 1000
Figure 5. Saturation Voltage Figure 6. Output Capacitance
©2002 Fairchild Semiconductor Corporation
VBE (sat)
VCE (sat)
IC [mA], COLLECTOR CURRENT
IC = 10 I
1
0.1 1 10 100
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC [mA], COLLECTOR CURRENT
- I
T
C
B
100
10
1
[pF], OUTPUT CAPACITANCE
ob
C
0.1
1 10 100 1000
f = 1 MHz
I
= 0
E
VCB[V], COLLECTOR-BASE VOLTAGE
Rev. A2, September 2002
Page 3
Package Dimensions
4.00
(1.10)
0.66 MAX.
±0.20
TO-92S
±0.20
3.70
±0.30
2.31
KSC2785
±0.20
14.47
0.49
±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
3.72
2.86
±0.20
1.27TYP
±0.20
±0.10
0.77
0.35
+0.10
–0.05
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
2
CMOS™
E
EnSigna™
FACT™
FACT Quiet series™
®
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
2
C™
I
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Form ative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Loading...