Page 1
Low Frequency Power Amplifier
• Complement to KSA1150
• Collector Dissipation : P
=300mW
C
KSC2710
KSC2710
1
1.Emitter 2. Collector 3. Base
TO-92S
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 40 V
Collector-Emitter Voltage 20 V
Emitter-Base Voltage 5 V
Collector Current 500 mA
Collector Power Dissipation 300 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. Typ . Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=0.5A, IB=50mA 0.18 0.4 V
V
CE
Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 20 V
Emitter-Base Breakdown Voltage IE=100µA, IC=0 5 V
Collector Cut-off Current VCB=25V, IE=0 0.1 µA
Emitter Cut-off Current VEB=3V, IC=0 0.1 µA
DC Current Gain VCE=1V, IC=0.1A 120 400
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification Y G
h
FE
©2004 Fairchild Semiconductor Corporation Rev. B2, April 2004
120 ~ 240 200 ~ 400
Page 2
Typical Characteristics
KSC2710
500
IB = 2.0mA
400
IB = 1.8mA
IB = 1.6mA
300
200
[mA], COLLECTOR CURRENT
100
C
I
IB = 1.4mA
IB = 1.2mA
IB = 1.0mA
IB = 0.8mA
IB = 0.6mA
IB = 0.4mA
IB = 0.2mA
0
0246810
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1 10 100 1000
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
IC=10I
1000
VCE=1V
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000
IC[mA], COLLECTOR CURRENT
100
B
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.00.20.40.60.81.01.2
VCE = 1V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
[pF], CAPACITANCE
ob
C
1
110100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2004 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
f = 1MHz
IE=0
Rev. B2, April 2004
Page 3
Package Dimensions
4.00
(1.10)
0.66 MAX.
±0.20
TO-92S
±0.20
3.70
±0.30
2.31
KSC2710
±0.20
14.47
0.49
±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
3.72
2.86
±0.20
1.27TYP
±0.20
±0.10
0.77
0.35
+0.10
–0.05
Dimensions in Millimeters
Rev. B2, April 2004©2004 Fairchild Semiconductor Corporation
Page 4
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2004 Fairchild Semiconductor Corporation Rev. I10
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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