
KSC1845
Audio Frequency Low Noise Amplifier
• Complement to KSA992
KSC1845
1
1. Emitter 2. Collector 3. Base
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
B
C
J
STG
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 5 V
Collector Current 50 mA
Base Current 10 mA
Collector Power Dissipation 500 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
(on) Base-Emitter On Voltage VCE=6V, IC=1mA 0.55 0.59 0.65 V
V
BE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.07 0.3 V
V
BE
f
T
C
ob
NL Noise Level 25 40 mV
Collector Cut-off Current VCB=120V, IE=0 50 nA
Emitter Cut-off Current VEB=5V, IC=0 50 nA
DC Current Gain VCE=6V, IC=0.1mA
Current Gain Bandwidth Product VCE=6V, IC=1mA 50 110 MHz
Output Capacitance VCB=30V, IE=0, f=1MHz 1.6 2.5 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
=6V, IC=1mA
CE
150
200
580
600 1200
hFE Classification
Classification P F E U
h
FE2
©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002
200 ~ 400 300 ~ 600 4 00 ~ 800 600 ~ 1200

Typical Characteristics
KSC1845
10
8
6
4
2
[mA], COLLECTOR CURRENT
C
I
0
012345
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB=16µA
IB=14µA
IB=12µA
IB=10µA
IB=8µA
IB=6µA
IB=4µA
IB=2µA
1.0
0.8
0.6
0.4
0.2
[mA], COLLECTOR CURRENT
C
I
0.0
020406080100
IB=1.4µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Static Characteristic
1000
900
800
700
600
500
400
300
, DC CURRENT GAIN
FE
h
200
100
0
0.01 0.1 1 10 100
IC[mA], COLLECTOR CURRENT
100
VCE = 6V
Pule Test
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
0.01
V
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IB=1.2µA
IB=1.0µA
IB=0.8µA
IB=0.6µA
IC=10I
Pulse Test
IB=0.4µA
IB=0.2µA
B
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
10
1
[pF], CAPACITANCE
ob
C
0.1
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Collector-Emitter Saturation Voltage
10k
f=1MHz
I
=0
E
1k
[MHz],
T
f
100
10
CURRENT GAIN-BANDWIDTH PRODUCT
0.1 1 10 100
IE[mA], EMITTER CURRENT
VCE=6V
Rev. B2, November 2002

KSC1845
Typical Characteristics
100
10
1
0.1
[mA], COLLECTOR CURRENT
C
I
0.01
0.4 0.5 0.6 0.7 0.8 0.9
VBE[V], BASE-EMITTER VOLTAGE
(Continued)
VCE = 6V
Pulse Test
800
700
600
500
400
300
200
[mW], POWER DISSIPATION
C
100
P
0
0 25 50 75 100 125 150 175
Ta[oC], CASE TEMPERATURE
Figure 7. Collector Current vs. Base-Emitter Voltage Figure 8. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B2, November 2002

Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
KSC1845
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.