Page 1
KSC1009
High Voltage Amplifier
• High Collector-Base Voltage : V
• Collector Current : I
=700mA
C
• Collector Power Dissipation : P
• Complement to KSA709
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
=160V
CBO
=800mW
C
KSC1009
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 160 V
Collector-Emitter Voltage 140 V
Emitter-Base Voltage 8 V
Collector Current 700 mA
Collector Power Dissipation 800 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=200mA, IB=20mA 0.2 0. 7 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=200mA, IB=20mA 0.86 1.0 V
V
BE
f
T
C
ob
Collector-Base Breakdown Voltage IC=100µA, IE=0 160 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 140 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 8 V
Collector Cut-off Current VCB=60V, IE=0 0.1 µA
Emitter Cut-off Current VEB=5V, IC=0 0.1 µA
DC Current Gain VCE=2V, IC=50mA 40 400
Current Gain Bandwidth Product VCE=10V, IC=50mA 30 50 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 8 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification R O Y G
h
FE
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400
Page 2
Typical Characteristics
KSC1009
100
90
80
70
60
50
40
30
20
[mA], COLLECTOR CURRENT
C
I
10
0
0246810
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB=0.8mA
IB=0.6mA
IB=0.4mA
IB=0.2mA
1000
100
10
, DC CURRENT GAIN
FE
h
1
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
VBE(sat)
VCE(sat)
IC=10I
1000
B
100
10
[mA], COLLECTOR CURRENT
C
I
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
0.01
BE
V
1 10 100 1000
IC[mA], COLLECTOR CURRENT
VCE = 5V
VCE=2V
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
[pF],CAPACTIANCE
ob
C
1
110100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2001 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
f=1MHz
I
=0
E
Rev. A1, June 2001
Page 3
Package Demensions
4.58
0.46
±0.10
+0.25
–0.15
K
SC1009
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
CEx™
A
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
®
UltraFET
VCX™
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H3
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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