
Audio Frequency Amplifier
• Complement to KSD1020
KSB810
KSB810
1
1.Emitter 2. Collector 3. Base
TO-92S
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
* PW≤10ms, Duty cycle≤50%
Collector-Base Voltage -30 V
Collector-Emitter Voltage -25 V
Emitter-Base Voltage -5.0 V
Collector Current (DC) -700 mA
* Collector Current (Pulse) -1.0 A
Collector Power Dissipation 350 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Emitter Cut-off Current VEB= -5V, IC=0 -100 nA
I
EBO
h
FE1
h
FE2
V
(on) * Base-Emitter on Voltage VCE= -6V, IC= -10mA -600 -640 -700 mV
BE
(sat) * Collector-Emitter Saturation Voltage IC= -700mA, IB= -70mA -0.25 -0.4 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC= -700mA, IB= -70mA -0.95 -1.2 V
V
BE
C
ob
f
T
* Pulse Test: PW≤350µs, Duty cycle≤2%
Collector Cut-off Current VCB= -30V, IE=0 -100 nA
* DC Current Gain VCE= -1V, IC= -100mA
Output Capacitance VCB= -6V, IE=0, f=1MHz 17 40 pF
Current Gain Bandwidth Product VCE= -6V, IC=-10mA 50 160 MHz
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
= -1V, IC= -700mA
V
CE
70
35
200
100
400
h
Classification
FE
Classification O Y G
h
FE1
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
70 ~ 140 120 ~ 240 200 ~ 400

Typical Characteristics
KSB810
-50
IB = -250µA
-40
-30
-20
-10
[mA], COLLECTOR CURRENT
C
I
0
0 -10 -20 -30 -40 -50
IB = -200µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-1000
-100
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-10
-10 -100 -1000
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IB = -150µA
IB = -100µA
IB = -50µA
IC=10I
1000
VCE= -1V
100
, DC CURRENT GAIN
FE
h
10
-10 -100 -1000
IC[mA], COLLECTOR CURRENT
1000
VCE = -6V
100
10
B
1
-1 -10 -100 -1000
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
©2001 Fairchild Semiconductor Corporation
Figure 4. Current Gain Bandwidth Product
Rev. A1, June 2001

Package Demensions
4.00
(1.10)
0.66 MAX.
±0.20
TO-92S
±0.20
3.70
±0.30
2.31
KSB810
±0.20
14.47
0.49
±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
3.72
2.86
±0.20
1.27TYP
±0.20
±0.10
0.77
0.35
+0.10
–0.05
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

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2
E
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®
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H3
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.