Page 1
KSB798
PNP Epitaxial Silicon Transistor
Audio Frequency Power Amplifier
• Collector Current : IC = -1A
• Collector Power Dissipation : P
1
1. Base 2. Collector 3. Emitter
= 2W
C
SOT-89
Marking
79 8
PY WW
Weekly code
Year code
hFE grage
KSB798 PNP Epitaxial Silicon Transistor
July 2005
Absolute Maximum Ratings
Ta = 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
* PW ≤ 10ms, Duty cycle ≤ 50%
Electrical Characteristics
Collector-Base Voltage -30 V
Collector-Emitter Voltage -25 V
Emitter-Base Voltage -5 V
Collector Current (DC) -1.0 A
Collector Current (Pulse) * -1.5 A
Collector Power Dissipation 2.0 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta = 25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
BV
BV
I
CBO
I
EBO
h
h
V
V
V
f
T
C
CBO
CEO
EBO
FE1
FE2
CE
BE
BE
ob
Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -30 V
Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 -25 V
Emitter-Base Breakdown Voltage IE = -100µA, IC = 0 -5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
= -30V, IE = 0 -0.1 µA
CB
= -5V, IC = 0 -0.1 µA
EB
= -1V, IC = -0.1A
CE
V
= -1V, IC = -1.0A
CE
90
50
400
(sat) Collector-Emitter Saturation Voltage IC = -1.0A, IB = -0.1A -0.4 V
(sat) Base-Emitter Saturation Voltage IC = -1.0A, IB = -0.1A -1.2 V
(on) Base-Emitter On Voltage V
Current Gain Bandwidth Product V
Output Capacitance V
= -6V, IC = -10mA -0.6 -0.7 V
CE
= -6V, IC = -10mA 110 MHz
CE
= -6V, IE = 0, f = 1MHz 18 pF
CB
©2005 Fairchild Semiconductor Corporation
KSB798 Rev. B1
1
www.fairchildsemi.com
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hFE Classification
Classification O Y G
h
FE1
90 ~ 180 135 ~ 270 200 ~ 400
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
798 KSB798 SOT-89 13” -- 4,000
KSB798 PNP Epitaxial Silicon Transistor
KSB798 Rev. B1
2
www.fairchildsemi.com
Page 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
IB = -7mA
IB = -6mA
IB = -5mA
IB = -4mA
IB = -3mA
IB = -2mA
IB = -1mA
1000
100
10
, DC CURRENT GAIN
FE
h
1
-10 -100 -1000
IC[mA], COLLECTOR CURRENT
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
[A], COLLECTOR CURRENT
-0.2
C
I
-0.1
0.0
IB = -8mA
0 -1-2-3-4-5-6-7-8-9-10
VCE[V], COLLECTOR-EMITTER VOLTAGE
KSB798 PNP Epitaxial Silicon Transistor
VCE= -1V
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Collector-Emitter Saturation Voltage
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1 -10 -100 -1000
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
IC = 10 I
100
B
10
[pF], CAPACITANCE
ob
C
1
-1 -10 -100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
100
-10
VCE = -6V
-1
f = 1MHz
IE=0
1.TC=25oC
2.Single pulse
200ms
10
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
KSB798 Rev. B1
-0.1
[A], COLLECTOR CURRENT
C
I
1
10
100
IC[mA], COLLECTOR CURRENT
-0.01
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
3
D
C
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Page 4
Mechanical Dimensions
4.50
±0.20
SOT-89
1.50
KSB798 PNP Epitaxial Silicon Transistor
±0.20
0.50
1.65
±0.10
1.50 TYP 1.50 TYP
±0.10
C0.2
0.40
±0.10
(0.50)
±0.20
2.50
(1.10)
±0.20
4.10
0.40
(0.40)
+0.10
–0.05
KSB798 Rev. B1
Dimensions in Millimeters
4
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Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
KSB798 PNP Epitaxial Silicon Transistor
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
5
KSB798 Rev. B1
Rev. I16
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