Page 1
KSB596
KSB596
Power Amplifier Applications
• Complement to KSD526
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
IB
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage - 80 V
Collector-Emitter Voltage - 80 V
Emitter-Base Voltage - 5 V
Collector Current(DC) - 4 A
Base Current - 0.4 A
Collector Dissipation (TC=25°C) 30 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
EBO
Collector Cut-off Current V
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = - 3A, IB = - 0.3A - 1 - 1.7 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0 - 80 V
Emitter-Base Breakdown Voltage IE = - 10mA, IC = 0 - 5 V
Emitter Cut-off Current V
DC Current Gain
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 80V, IE = 0 - 70 µA
CB
= - 5V, IC = 0 - 100 µA
EB
V
= - 5V, IC = - 0.5A
CE
V
= - 5V, IC = - 3A
CE
= - 5V, IC = - 3A - 1 - 1.5 V
CE
= - 5V, IC = - 0.5A 3 MHz
CE
= - 10V, IE = 0
CB
f = 1MHz
40
15
240
130 pF
hFE Classification
Classification R O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 70 ~ 140 120 ~ 240
Page 2
Typical Characteristics
KSB596
-4.0
-3.2
-2.4
-1.6
-0.8
Ic[A], COLLECTOR CURRENT
0
-4
-3
-2
-1
[A], COLLECTOR CURRENT
C
I
0
IB = -140mA
IB = -160mA
IB = -180mA
= -120mA
B
I
= -100mA
I
B
= -80mA
I
B
IB = -60mA
1000
100
IB = -40mA
IB = -20mA
IB = 0mA
-1 -2 -3 -4 -5
VCE[V], COLLECTOR-EMITTER VOLTAGE
10
, DC CURRENT GAIN
FE
h
1
-0.001 -0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
VCE = -5V
-0.4 -0.8 -1.2 -1.6
VBE[V], BASE-EMITTER VOLTAGE
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
V
-0.01
-0.001 -0.01 -0. 1 -1 -10
IC[A], COLLECTOR CURRENT
VCE = -5V
IC = 10 I
B
Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
-200
-160
-120
-80
-40
[mA], COLLECTOR CURRENT
C
I
0
-0.2 -0.4 -0.6 -0.8 -1.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
VCE = -5V
-10
Ic Max(Pulse)
Ic Max(Continuous)
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -1 0 0
DC(Tc=25
100ms
o
C)
1ms
10ms
1s
VCE[V], COLLECTOR-EMITTER VOLTAGE
Rev. A, February 2000
Page 3
KSB596
Typical Characteristics
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 1. Power Derating
(Continued)
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Page 4
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
KSB596
±0.20
13.08
(1.00)
1.27
2.54TYP
±0.20
[2.54
±0.10
]
10.00
±0.20
1.52
±0.10
0.80
2.54TYP
[2.54
±0.10
±0.20
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
2
E
CMOS™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Loading...