Page 1
Power Amplifier Applications
• Complement to KSD1408
KSB1017
KSB1017
1
TO-220F
1.Base 2.Collector 3.Emitter
PNP Silicon Epitaxial Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
B
C
J
STG
Collector-Base Voltage - 80 V
Collector-Emitter Voltage - 80 V
Emitter-Base Voltage - 5 V
Collector Current - 4 A
Base Current - 0.4 A
Collector Dissipation ( TC=25°C) 25 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0 -80 V
CEO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturat ion Voltage IC = - 3A, IB = - 0.3A - 1 - 1.7 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
f
T
C
ob
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 80V, IE = 0 - 30 µA
CB
= - 5V, IC = 0 - 100 µA
EB
= - 5V, IC = - 0.5A
CE
V
= - 5V, IC = - 3A
CE
= - 5V, IC = - 3A - 1 - 1.5 V
CE
= - 5V, IC = - 0.5A 9 MHz
CE
= - 10V, f = 1MHz 130 pF
CB
40
15
240
h
Classification
FE
Classification R O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 70 ~ 140 120 ~ 240
Page 2
Typical Characteristics
KSB1017
-4.0
-3.2
-2.4
-1.6
[A], COLLECTOR CURRENT
-0.8
C
I
-0.0
-0 -1 -2 -3 -4 -5
IB = -160mA
IB = -140mA
IB = -180mA
IB = -120mA
IB = -100mA
IB = 0A
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
V
-0.01
-1E-3 -0. 01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
IB = -80mA
IB = -60mA
IB = -40mA
IB = -20mA
IC=10I
1000
VCE = -5V
100
10
, DC CURRENT GAIN
FE
h
1
-1E-3 -0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
B
-4
-3
-2
-1
[A], COLLECTOR CURRENT
C
I
-0
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
VCE = -5V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
-100
IC(max). (Pulse)
-10
IC(max). (DC)
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100 -1000
VCE[V], COLLECTOR-EMITTER V OLT AGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
1
m
s
100
10ms
m
s
1s
DC
MAX.
CEO
V
40
35
30
25
20
15
10
[W], POWER DISSIPATION
D
P
5
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
Page 3
Package Demensions
±0.10
3.30
±0.20
15.80
10.16
(7.00)
TO-220F
±0.20
ø3.18
±0.10
±0.20
6.68
(1.00x45°)
2.54
(0.70)
KSB1017
±0.20
±0.20
15.87
±0.30
9.75
MAX1.47
0.80
0.35
2.54TYP
±0.20
[2.54
±0.10
±0.10
(30°)
#1
0.50
+0.10
–0.05
2.76
±0.20
2.54TYP
]
9.40
±0.20
[2.54
±0.20
±0.20
]
4.70
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 4
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not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
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2
E
CMOS™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Prod uct Statu s Definition
Advance Information Form ative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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