
KSA910
Driver Stage Of Audio Amplifier & High
Voltage Switching Applications
• Collector-Emitter Voltage : V
• Output Capacitance : C
• Complement to KSC2310
ob
= -150V
CEO
=5pF (MAX.)
KSA910
1
1. Emitter 2. Collector 3. Base
TO-92L
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -150 V
Collector-Emitter Voltage -150 V
Emitter-Base Voltage -5 V
Collector Current -50 mA
Collector Power Dissipation 800 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -0.8 V
V
CE
f
T
C
ob
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -150 V
Collector-Emitter Breakdown Voltage IC= -5mA, IB=0 - 150 V
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
Collector Cut-off Current VCB= -150V, IE=0 -100 nA
DC Current Gain VCE= -5V, IC= -10mA 40 240
Current Gain Bandwidth Product VCE= -30V, IC= -10mA 100 MHz
Output Capacitance VCB= -10V, IE=0, f=1MHz 5 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification R O Y
h
FE
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
40 ~ 80 70 ~ 140 120 ~ 240

Typical Characteristics
KSA910
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
[mA], COLLECTOR CURRENT
C
I
-10
-5
0
0-1-2-3-4-5-6-7-8-9-10-11-12-13-14
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
1 10 100 1000
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IB = -600µA
IB = -500µA
IB = -400µA
IB = -300µA
IB = -200µA
IB = -100µA
IC = 10 I
1000
VCE = -5V
100
, DC CURRENT GAIN
FE
h
10
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
B
-80
-70
-60
-50
-40
-30
-20
[mA], COLLECTOR CURRENT
C
-10
I
0
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
VCE = -5V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-1000
-100
-10
[mA], COLLECTOR CURRENT
C
I
-1
-1 -10 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
100ms
DC
1.0
0.8
0.6
0.4
[W], POWER DISSIPATIO N
0.2
C
P
0.0
0 25 50 75 100 125 150 175
Ta[oC], AMBIENT TEMPERATURE
Rev. A1, June 2001

Package Demensions
±0.20
8.00
±0.20
±0.10
1.70
±0.40
1.00
4.90
±0.20
TO-92L
0.70MAX.
0.80
±0.10
1.00MAX.
KSA910
13.50
0.50
±0.20
3.90
±0.10
±0.20
1.45
3.90
±0.20
1.27TYP
[1.27
2.54 TYP
±0.10
0.45
±0.20
]
±0.10
0.45
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
A
CEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
®
UltraFET
VCX™
®
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H3
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.