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KSA708
Low Frequency Amplifier & Medium Speed
Switching
• Complement to KSC1008
• Collector-Base Voltage : V
• Collector Power Dissipation : P
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
PNP Epitaxial Silicon Transistor
CBO
= -80V
=800mW
C
1
1. Emitter 2. Base 3. Collector
TO-92
KSA708
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -80 V
Collector-Emitter Voltage -60 V
Emitter-Base Voltage -8 V
Collector Current -700 mA
Collector Power Dissipation 800 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.3 -0.7 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.9 1.1 V
V
BE
f
T
C
ob
* Pulse Test: PW≤350µs, Duty cycle≤2%
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -80 V
Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -60 V
Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -8 V
Collector Cut-off Current VCB= -60V , IE=0 -0.1 µA
Emitter Cut-off Current VEB= -5V, IC=0 -0.1 µA
* DC Current Gain VCE= -2V, IC= -50mA 40 240
Current Gain Bandwidth Product VCE= -10V , IC= -50mA 50 MHz
Output Capacitance VCB= -10V , IE=0, f=1MHz 13 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification R O Y
h
FE
©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001
40 ~ 80 70 ~ 140 120 ~ 240
Page 2
Typical Characteristics
KSA708
-500
-450
-400
-350
-300
-250
-200
-150
-100
[mA], COLLECTOR CURRENT
C
I
-50
0
0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50
IB = -1.8mA
IB = -1.6mA
IB = -1.4mA
IB = -1.2mA
IB = -1.0mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IB = -0.8mA
IB = -0.6mA
IB = -0.4mA
IB = -0.2mA
IC = 10 I
1000
VCE = -2V
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
B
-1000
-100
-10
[mA], COLLECTOR CURRENT
C
I
-1
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VCE = -2V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
Cob [pF], CAPACITANCE
1
-1 -10 -100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2001 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
IE = 0
f = 1MHz
Rev. A1, August 2001
Page 3
Package Demensions
4.58
0.46
±0.10
+0.25
–0.15
KSA708
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, August 2001
Page 4
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2
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E
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STAR*POWER is used under license
®
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®
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H4
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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