Datasheet KSA473 Datasheet (Fairchild Semiconductor)

KSA473

Low Frequency Power Amplifier Power Regulator

• Collector Current : IC= -3A

• Collector Dissipation : P

• Complement to KSC1173

PNP Epitaxial Silicon Transistor

= 10W (TC=25°C)

C

1

1.Base 2.Collector 3.Emitter

TO-220

KSA473

Absolute Maximum Ratings

Symbol Parameter Ratings Units

V V V I P T T

CBO CEO EBO

C

C J STG

Collector-Base Voltage - 30 V Collector-Emitter Voltage - 30 V Emitter-Base Voltage - 5 V Collector Current - 3 A Collector Dissipation (TC=25°C) 10 W Junction Temperature 150 °C Storage Temperature - 55 ~ 150 °C

Electrical Characteristics

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE1

h

FE2

(sat) Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.3 - 0.8 V

V

CE

(on) Base-Emitter ON Voltage V

V

BE

f

T

C

ob

Collector-Base Breakdown Voltage IC = - 500µA, IE = 0 - 30 V Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 - 30 V Emitter-Base Breakdown Voltage IE = - 1mA, IC = 0 - 5 V Collector Cut-off Current V Emitter Cut-off Current V DC Current Gain V

Current Gain Bandwidth Product VCE= - 2V, IC = - 0.5A 100 MHz Output Capacitance V

TC=25°C unless otherwise noted

= - 20V, IE = 0 - 1.0 µA

CB

= - 5V, IC = 0 - 1.0 µA

EB

= - 2V, IC = - 0.5A

CE

V

= - 2V, IC = - 2.5A

CE

= - 2V, IC = - 0.5A - 0.75 - 1.0 V

CE

= - 10V, IE = 0,

CB

f = 1MHz

70 25

240

40 pF

h

Classification

FE

Classification O Y

h

FE1

70 ~ 140 120 ~ 240

Typical Characteristics

KSA473

-3.2

-2.8

-2.4

-2.0

-1.6

-1.2

-0.8

[A], COLLECTOR CURRENT

C

I

-0.4

-0.0

-0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10

IB = -40mA

IB = -35mA

IB = -30mA

IB = -25mA

IB = -20mA

IB = -15mA

IB = -10mA

IB = -5mA

IB = -3mA

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC current Gain

-10

-1

-0.1

(sat)[V], SATURATION VOLTAGE

CE

(sat), V

BE

V

-0.01

-0.01 -0.1 -1 -10

IC[A], COLLECTOR CURRENT

VBE(sat)

VCE(sat)

IC = 10 I

1000

VCE = -2V

100

10

, DC CURRENT GAIN

FE

h

1

-0.01 -0.1 -1 -10

IC[A], COLLECTOR CURRENT

B

-3.6

-3.2

-2.8

-2.4

-2.0

-1.6

-1.2

-0.8

[A], COLLECTOR CURRENT

C

I

-0.4

-0.0

-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0

VCE = -2V

VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000

100

10

[pF], CAPACITANCE

ob

C

1

-1 -10 -100

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 5. Collector Output Capacitance Figure 6. Safe Operating Area

Figure 4. Base-Emitter On Voltage

-10

f=1MHz IE=0

IC MAX. (Pulse)

IC MAX. (DC)

-1

[A], COLLECTOR CURRENT

C

I

-0.1

-1 -10 -100

TC=25

* Single Pulse

℃

TC=25

VCE[V], COLLECT OR -EMITTER VO L TA G E

℃

*10ms

*50ms

S/B limitatio n

*1ms

Thermal

limitation

Rev. A, February 2000

KSA473

Typical Characteristics

20

15

10

5

[W], POWER DISSIPATION

C

P

0

0 25 5 0 75 1 00 125 150 175

TC[oC], CASE TEMPERATURE

Figure 7. Power Derating

(Continued)

Rev. A, February 2000

Package Demensions

±0.10

(1.70)

1.30

±0.20

9.20 (1.46)

9.90 (8.70)

ø3.60

TO-220

±0.20

±0.10

(45°)

(3.70)(3.00)

±0.10

2.80

±0.20

15.90

18.95MAX.

4.50

1.30

±0.20

+0.10 –0.05

KSA473

±0.20

13.08

(1.00)

1.27

2.54TYP

[2.54

±0.10

±0.20

]

10.00

±0.20

1.52

±0.10

0.80

±0.10

2.54TYP

±0.20

[2.54

±0.30

10.08

+0.10

0.50

–0.05

2.40

±0.20

]

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™

2

E

CMOS™ FACT™ FACT Quiet Series™

®

FAST FASTr™ GTO™

HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench

®

QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6

SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.