Datasheet ksa1625 Datasheet

Page 1
High Voltage Switch
• High Breakdown Voltage
• High Speed Switching
KSA1625
KSA1625
1
1. Emitter 2. Collector 3. Base
TO-92
PNP Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
B
I
C
I
Collector Current (Pulse) -1.0 A
CP
P
C
Collector Power Dissipation (TC=25°C) 2 W
P
C
T
J
T
STG
Collector-Base Voltage -400 V Collector-Emitter Voltage -400 V Emitter-Base Voltage -7 V Base Current -0.25 A Collector Current (DC) -0.5 A
Collector Power Dissipation (Ta=25°C) 0.75 W
Junction Temperature 150 °C Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CBO
I
EBO
Dc Current Gain VCE= -5V, IC= -50mA 40 200
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -1 V
V
CE
(sat) Base-Emitter Saturation Voltage IC= -100mA, IB= -10mA -1.2 V
V
BE
f
T
C
ob
t
ON
t
STG
t
F
Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -400 V Collector Cut-off Current VCB= -400V, IE=0 -1 µA Emitter Cut-off Current VEB= -5V, IC=0 -1 µA
Current Gain Bandwidth Product VCE= -10V, IC= -10mA 10 MHz Output Capacitance VCB= -10V, f=1MHz 25 pF Turn On Time IC= -100mA, RL=1.5kΩ Storage Time 5 µs Fall Time 1 µs
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
I
=- IB2= -10mA
B1
= -150V
V
CC
1 µs
h
Classification
FE
Classification M L K
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, June 2002
40 ~ 80 60 ~ 120 100 ~ 200
Page 2
Typical Characteristics
KSA1625
-0.5
-0.4
-0.3
-0.2
[A], COLLECTOR CURRENT
C
-0.1
I
-0 -2 -4 -6 -8 -10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
VBE(sat)
VCE(sat)
=-200mA
I
B
=-180mA
I
B
=-160mA
I
B
IB=-140mA IB=-120mA
IB=-100mA
IB=-80mA IB=-60mA
IB=-40mA IB=-20mA
IC= - 10 I
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.1 -1 -10 -100 -1000
VCE= - 5V
IC[mA], COLLECTOR CURRENT
B
1000
100
10
[pF], CAPACITANCE
ob
C
f=1.0MHz
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
1000
100
10
1
-1 -10 -100 -1000
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
1
-0.1 -1 -10 -100 -1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
VCE = -10V
-10
ICMAX(Pulse)
-1
-0.1
-0.01
[A], COLLECTOR CURRENT
C
I
-0.001
-1 -10 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Ta=25oC Single Pulse
10
µ
s
100
1ms
µ
s
DC
V
CEO
(sus)MAX
Rev. A2, June 2002
Page 3
Package Demensions
4.58
0.46
±0.10
+0.25 –0.15
KSA1625
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10 –0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, June 2002
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™
2
E
CMOS™ EnSigna™ FACT™ FACT Quiet series™
®
FAST
FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™
2
I
C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™
OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER
®
SMART START™
VCX™
SPM™ Stealth™ SuperSOT™-3
®
SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™
®
UltraFET
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Producti on This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. H7
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Semiconductor reserves the right to make changes at any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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