
High Voltage Switch
• High Breakdown Voltage
• High Speed Switching
KSA1625
KSA1625
1
1. Emitter 2. Collector 3. Base
TO-92
PNP Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
B
I
C
I
Collector Current (Pulse) -1.0 A
CP
P
C
Collector Power Dissipation (TC=25°C) 2 W
P
C
T
J
T
STG
Collector-Base Voltage -400 V
Collector-Emitter Voltage -400 V
Emitter-Base Voltage -7 V
Base Current -0.25 A
Collector Current (DC) -0.5 A
Collector Power Dissipation (Ta=25°C) 0.75 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CBO
I
EBO
Dc Current Gain VCE= -5V, IC= -50mA 40 200
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -1 V
V
CE
(sat) Base-Emitter Saturation Voltage IC= -100mA, IB= -10mA -1.2 V
V
BE
f
T
C
ob
t
ON
t
STG
t
F
Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -400 V
Collector Cut-off Current VCB= -400V, IE=0 -1 µA
Emitter Cut-off Current VEB= -5V, IC=0 -1 µA
Current Gain Bandwidth Product VCE= -10V, IC= -10mA 10 MHz
Output Capacitance VCB= -10V, f=1MHz 25 pF
Turn On Time IC= -100mA, RL=1.5kΩ
Storage Time 5 µs
Fall Time 1 µs
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
I
=- IB2= -10mA
B1
= -150V
V
CC
1 µs
h
Classification
FE
Classification M L K
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, June 2002
40 ~ 80 60 ~ 120 100 ~ 200

Typical Characteristics
KSA1625
-0.5
-0.4
-0.3
-0.2
[A], COLLECTOR CURRENT
C
-0.1
I
-0 -2 -4 -6 -8 -10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
VBE(sat)
VCE(sat)
=-200mA
I
B
=-180mA
I
B
=-160mA
I
B
IB=-140mA
IB=-120mA
IB=-100mA
IB=-80mA
IB=-60mA
IB=-40mA
IB=-20mA
IC= - 10 I
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.1 -1 -10 -100 -1000
VCE= - 5V
IC[mA], COLLECTOR CURRENT
B
1000
100
10
[pF], CAPACITANCE
ob
C
f=1.0MHz
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
1000
100
10
1
-1 -10 -100 -1000
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
1
-0.1 -1 -10 -100 -1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
VCE = -10V
-10
ICMAX(Pulse)
-1
-0.1
-0.01
[A], COLLECTOR CURRENT
C
I
-0.001
-1 -10 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Ta=25oC
Single Pulse
10
µ
s
100
1ms
µ
s
DC
V
CEO
(sus)MAX
Rev. A2, June 2002

Package Demensions
4.58
0.46
±0.10
+0.25
–0.15
KSA1625
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, June 2002

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2
E
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®
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®
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®
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Producti on This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. H7
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.