Page 1
KSA1203
PNP Epitaxial Silicon Transistor
Low Frequency Power Amplifier
• 3W Output application
• Collector Power Dissipation P
• Complement to KSC2883
1
1. Base 2. Collector 3. Emitter
=1~2W : Mounted on Ceramic Board
C
SOT-89
Marking
12 03
PY WW
Weekly code
Year co de
hFE grage
KSA1203 PNP Epitaxial Silicon Transistor
July 2005
Absolute Maximum Ratings
Ta = 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
PC*
T
J
T
STG
* Mounted on Ceramic Board (250mm
Electrical Characteristics
Collector-Base Voltage -30 V
Collector-Emitter Voltage -30 V
Emitter-Base Voltage -5 V
Collector Current -1.5 A
Base Current -0.3 A
Collector Power Dissipation 500
1,000
mW
mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
2
× 0.8mm)
Ta = 25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
BV
I
CBO
I
EBO
h
V
V
f
T
C
CEO
EBO
FE
CE
BE
ob
Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -30 V
Emitter-Base Breakdown Voltage IE = -1mA, IC = 0 -5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
= -30V, IE = 0 -100 nA
CB
= -5V, IC = 0 -100 nA
BE
= -2V, IC = -500mA 100 320
CE
(sat) Collector-Emitter Saturation Voltage IC = -1.5A, IB = -30mA -2.0 V
(on) Base-Emitter On Voltage V
Current Gain Bandwidth Product V
Output Capacitance V
= -2V, IC = -500mA -1.0 V
CE
= -2V, IC = -500mA 120 MHz
CE
= -10V, IE = 0, f = 1MHz 50 pF
CB
©2005 Fairchild Semiconductor Corporation
KSA1203 Rev. B3
1
www.fairchildsemi.com
Page 2
hFE Classification
Classification O Y
h
FE
100 ~ 200 160 ~ 320
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
1203 KSA1203 SOT-89 13” -- 4,000
KSA1203 PNP Epitaxial Silicon Transistor
KSA1203 Rev. B3
2
www.fairchildsemi.com
Page 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
-1.6
-1.4
IB =-10mA
1000
IB =-8mA
KSA1203 PNP Epitaxial Silicon Transistor
VCE = -2V
-1.2
-1.0
-0.8
-0.6
-0.4
[A], COLLECTOR CURRENT
C
I
-0.2
-0 -2 -4 -6 -8 -10 -12 -14 -16
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB =-6mA
IB =-4mA
IB =-3mA
IB =-2mA
IB =-1mA
IB =0mA
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000 -10000
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
-10
-1
IC = 50I
B
-0.1
(sat)[V], SATURATION VOLTAGE
CE
V
[A], COLLECTOR CURRENT
C
I
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
VCE = -2V
-0.01
-1 -10 -100 -1000 -10000
0 - 0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
IC[mA], COLLECTOR CURRENT
Figure 5. Safe Operating Area Figure 6. Power Derating
-10
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-0.1 -1 -10 -100
KSA1203 Rev. B3
ICMAX(Pulse)
ICMAX(DC)
VCE[V], COLLECTOR-EMITTER VOLTAGE
Ta=25oC
Single Pulse
1
1
m
0
m
s
s
1
0
0
m
s
1
s
MAX
CEO
V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
[W], POWER DISSIPATION
C
P
0.2
0 25 50 75 100 125 150 175 200
3
VBE[V], BASE-EMITTER VOLTAGE
M
o
u
n
t
e
d
o
n
C
e
r
a
m
i
c
B
o
a
r
d
(
2
5
0
m
m
2
X
0
.
8
m
m
)
Ta[oC], AMBIENT TEMPERATURE
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Page 4
Mechanical Dimensions
4.50
±0.20
SOT-89
1.50
KSA1203 PNP Epitaxial Silicon Transistor
±0.20
0.50
1.65
±0.10
1.50 TYP 1.50 TYP
±0.10
C0.2
0.40
±0.10
(0.50)
±0.20
2.50
(1.10)
±0.20
4.10
0.40
(0.40)
+0.10
–0.05
KSA1203 Rev. B3
Dimensions in Millimeters
4
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Page 5
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
KSA1203 PNP Epitaxial Silicon Transistor
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
5
KSA1203 Rev. B3
Rev. I16
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