Page 1
KSA1201
Power Amplifier
• Collector-Emitter Voltage: V
=120MHz
•f
T
• Collector Power Dissipation P
• Complement to KSC2881
PNP Epitaxial Silicon Transistor
= -120V
CEO
=1~2W : Mounted on Ceramic Board
C
1
1. Base 2. Collector 3. Emitter
SOT-89
KSA1201
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
PC*
T
J
T
STG
* Mounted on Ceramic Board (250mm2 x 0.8mm)
Collector Base Voltage -120 V
Collector-Emitter Voltage -120 V
Emitter-Base Voltage -5 V
Collector Current -800 mA
Base Current -160 mA
Collector Power Dissipation 500
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -500mA, IB=-50mA -1.0 V
V
CE
(on) Base-Emitter On Voltage VCE= -5V, IC= -500mA -1.0 V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -120 V
Emitter-Base Breakdown Voltage IE= -1mA, IC=0 -5 V
Collector Cut-off Current VCB= -120V, IE=0 -100 nA
Emitter Cut-off Current VBE= -5V, IC=0 -100 nA
DC Current Gain VCE= -5V, IC= -100mA 80 240
Current Gain Bandwidth Product VCE= -5V, IC= -100mA 120 MHz
Output Capacitance VCB= -10V, IE=0, f=1MHz 30 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
1,000
mW
mW
h
Classification
FE
Classification O Y
h
FE
80 ~ 160 120 ~ 240
Marking
SDX
hFE grade
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Page 2
Typical Characteristics
KSA1201
-0.8
-0.6
IB =-10mA
IB =-7mA
IB =-5mA
IB =-4mA
-0.4
IB =-3mA
IB =-2mA
-0.2
[A], COLLECTOR CURRENT
C
I
IB =-1mA
IB =0
-0 -4 -8 -12 -16
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-1
-0.1
IC = 10 I
1000
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
VCE = -5V
IC[mA], COLLECTOR CURRENT
-1.0
B
-0.8
-0.6
-0.4
VCE = -5V
(sat)[V], SATURATION VOLT A GE
CE
V
-0.01
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
-0.2
[A], COLLECTOR CURRENT
C
I
0 -0.2 -0.4 -0.6 -0.8 -1.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
-10000
ICMAX(Pulse)
ICMAX(DC)
-1000
-100
-10
[mA], COLLECTOR CURRENT
C
I
-1
-0.1 -1 -10 -100 -1000
100ms
10ms
1ms
VCE[V], COLLECTOR-EMITTER VOLTAGE
o
C
Ta=25
Single Pulse
MAX
CEO
V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
[W], POWER DISSIPATION
C
P
0.2
Mounted on Ceramic Board (250mm
0 25 50 75 100 125 150 175 200
Ta[oC], AMBIENT TEMPERATURE
2
X0.8mm)
Figure 5. Safe Operating Area Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
Page 3
Package Dimensions
4.50
±0.20
SOT-89
1.50
KSA1201
±0.20
0.50
1.65
±0.10
1.50 TYP 1.50 TYP
±0.10
C0.2
0.40
±0.10
(0.50)
±0.20
2.50
(1.10)
±0.20
4.10
0.40
(0.40)
+0.10
–0.05
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Page 4
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intended to be an exhaustive list of all such trademarks.
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2
CMOS™
E
EnSigna™
FACT™
FACT Quiet series™
®
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FASTr™
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HiSeC™
2
C™
I
Across the board. Around the world.™
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OPTOLOGIC
®
OPTOPLANAR™
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POP™
Power247™
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®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
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®
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®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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