Page 1
KSA1174
Audio Frequency Low Noise Amplifier
• Complement to KSC2784
KSA1174
1
1.Emitter 2. Collector 3. Base
TO-92S
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
B
C
J
STG
Collector-Base Voltage -120 V
Collector-Emitter Voltage -120 V
Emitter-Base Voltage -5 V
Collector Current -50 mA
Base Current -10 mA
Collector Power Dissipation 300 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2
(on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.55 -0.61 -0.65 V
V
BE
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -0.09 -0.3 V
V
CE
f
T
C
ob
NV Noise Voltage 25 40 mV
Collector Cut-off Current VCB= -120V, IE=0 -50 nA
Collector Cut-off Current VCE= -100V, IB=0 -1 µA
Emitter Cut-off Current VEB= -5V, IC= 0 -50 nA
DC Current Gain VCE= -6V, IC= -0.1mA
Current Gain Bandwidth Product VCE= -6V, IC= -1mA 50 100 MHz
Output Capacitance VCB= -30V, IE= 0, f=1MHz 2 3 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
= -6V, IC= -1mA
CE
150
200
500
500 800
h
Classification
FE2
Classification P F E
h
FE2
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
200 ~ 400 300 ~ 600 400 ~ 800
Page 2
Typical Characteristics
KSA1174
-1.0
-0.8
-0.6
-0.4
-0.2
[mA], COLLECTOR CURRENT
C
I
0.0
0 -20 -40 -60 -80 -100
IB = -1.4µA
IB = -1.2µA
IB = -1.0µA
IB = 0
VCE[V], CO LLEC T OR-EMITTE R VOLTAGE
Figure 1. Static Characteristic Figure 2. Static Characteristic
1000
800
600
400
, DC CURRENT GAIN
FE
h
200
0
-0.01 -0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
IB = -0.8µA
IB = -0.6µA
IB = -0.4µA
IB = -0.2µA
VCE= -6V
-10
IB = -24µA
-8
-6
-4
-2
[mA], COLLECTOR CURRENT
C
I
0
0-1-2-3-4-5
IB = -20µA
IB = -16µA
IB = -12µA
IB = -8µA
IB = -4µA
IB = 0
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat)
VCE(sat)
IC = 10I
B
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
BE
(sat), V
CE
V
-0.01
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
10
1
[pF], CAPACITANCE
ob
C
0.1
-1 -10 -100 -1000
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Collector-Emitter Saturation Voltage
1000
IE=0
f = 1MHz
100
10
1
0.1 1 10 100
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IE[mA], COLLECTOR CURRENT
VCE = -6V
Rev. A2, September 2002
Page 3
KSA1174
Typical Characteristics
800
700
600
500
400
300
200
[mW], POWER DISSIPATION
C
P
100
0
0 25 50 75 100 125 150 175 200
Ta[oC], AMBIENT TEMPERATURE
Figure 7. Power Derating
(Coninued)
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
Page 4
Package Dimensions
4.00
(1.10)
0.66 MAX.
±0.20
TO-92S
±0.20
3.70
±0.30
2.31
KSA1174
±0.20
14.47
0.49
±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
3.72
2.86
±0.20
1.27TYP
±0.20
±0.10
0.77
0.35
+0.10
–0.05
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Page 5
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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