High Voltage Switching
Low Power Switching Regulator
DC-DC Converter
• High Breakdown Voltage
• Low Collector Saturation Voltage
• High Speed Switching
PNP Silicon Transistor
KSA1156
1
TO-126
1. Emitter 2.Collector 3.Base
KSA1156
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
B
I
C
I
CP
P
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage - 400 V
Collector-Emitter Voltage - 400 V
Emitter-Base Voltage - 7 V
Base Current - 0.25 A
Collector Current (DC) - 0.5 A
Collector Current (Pulse) - 1 A
Collector Dissipation (Ta=25°C) 1 W
Collector Dissipation (TC=25°C) 10 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
V
(sus) Collector-Emitter Sustaining Voltage IC = - 100mA, IB = - 10mA
CEO
- 400 V
L = - 20mH
(sus) Collector-Emitter Sustaining Voltage
V
CEX
I
CBO
I
EBO
I
CEX1
I
CEX2
h
FE
(sat) Collector-Emitter Saturation Voltage IC = - 100mA, IB = - 10mA - 1 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = - 100mA, IB = - 10mA - 1.2 V
V
BE
t
ON
t
STG
t
F
Collector Cut-off Current VCB = - 400V, IE = 0 - 100 µA
Emitter Cut-off Current VEB = - 5V, IC = 0 - 10 µA
Collector Cut-off Current VCE = - 400V, VBE(off) = 1.5V - 100 µA
Collector Cut-off Current VCE = - 400V, VBE(off) = 1.5V
DC Current Gain VCE = - 5V, IC = - 100mA 30 200
Turn On Time VCC = - 150V, IC = - 100mA
Storage Time 4 µs
Fall Time 1 µs
IC = - 200mA, IB1 = - IB2 = - 20mA
(off)= 5V, L = 10mH
V
BE
= 125°C
T
C
I
= - 10mA , IB2 = 20mA
B1
= 1.5KΩ
R
L
- 400 V
- 1 mA
1 µs
hFE Classification
Classification N R O Y
h
FE
©2000 Fairchild Semiconductor International Rev. A, February 2000
30 ~ 60 40 ~ 80 60 ~ 120 100 ~ 200
Typical Characteristics
KSA1156
-0.5
-0.4
-0.3
-0.2
[A], COLLECTOR CURRENT
-0.1
C
I
-0.0
-0 -2 -4 -6 -8 -10
VCE[V], CO LLEC TOR-E MITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100 -1000
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
IB = -200mA
IB = -180mA
IB = -160mA
IB = -140mA
IB = -120mA
IB = -100mA
= -80mA
I
B
IB = -60mA
IB = -40mA
IB = -20mA
IC = 10 I
1000
VCE = -5V
Pulse Test
100
10
, DC CURRENT GAIN
FE
h
1
-0.1 -1 -10 -100 -1000
IC[A], COLLECTOR CURRENT
DISSIPATION
LIMITED
10
㎲
100
1ms
DC
㎲
S/b LIMITED
MAX.
CEO
V
-10
B
IC MAX. (Pulse)
-1
-0.1
-0.01
[A], COLLECTOR CURRENT
C
I
-1E-3
-1 -10 -100 -1000
VCE[V], COLLECTOR-EMITT E R VOL TA G E
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-250
-200
-150
-100
-50
(mA), COLLECTOR CURRENT
C
I
-0
-0 -100 -200 -300 -400 -500
VCE(v), COLLECTOR EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Area Figure 6. Derating Curve of Safe Operating Areas
©2000 Fairchild Semiconductor International
Figure 4. Safe Operating Area
160
140
120
100
80
DERATING
c
60
dT(%),I
40
20
0
0 50 100 150 200
TC[oC], CASE TEMPERATURE
S/b Limited
Dissipation Limited
Rev. A, February 2000
KSA1156
Typical characteristics
16
14
12
10
8
6
4
[W], POWER DISSIPATION
C
P
2
0
0 50 100 150 200
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
(Continued)
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
KSA1156
TO-126
±0.10
3.90
ø3.20
±0.10
0.75
1.60
0.75
2.28TYP
[2.28±0.20]
±0.10
±0.10
±0.10
8.00
#1
±0.30
2.28TYP
[2.28±0.20]
14.20MAX
±0.30
13.06
±0.20
11.00
(1.00)
±0.20
16.10
0.50
3.25
(0.50)
1.75
+0.10
–0.05
±0.20
±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
2
E
CMOS™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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