Page 1
SEMICONDUCT
KRX105U
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·Including two devices in USV.
(Ultra Super mini type with 5 leads.)
·With Built-in bias resistors.
·Simplify circuit design.
·Reduce a quantity of parts and manufacturing process.
DIMMILLIMETERS
A
B
D
G
USV
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
T
5
4
EQUIVALENT CIRCUIT
Q1MAXIMUM RATING (Ta=25℃)
BE
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
100
㎃
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-100
㎃
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation
PC *
200
㎽
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
OR
TECHNICAL DATA
Q
1
C
R1
B
E
Q
2
C
R1
B
R1=4.7KΩ
(Q , Q COMMON)
1
2
E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
B
B1
1
C
2
A
A1
C
3
H
1. Q COMMON (EMITTER)
1
2. Q IN (BASE)
1
3. Q COMMON (EMITTER)
2
4. Q OUT (COLLECTOR)
2
5. Q OUT (COLLECTOR)
1
Q IN (BASE)
2
D
G
_
+
_
1.3 0.1A1
+
_
+
_
+
_
+
Q2MAXIMUM RATING (Ta=25℃)
Q1, Q2MAXIMUM RATING (Ta=25℃)
* Total Raing.
EQUIVALENT CIRCUIT (TOP VIEW)
54
Q2
Q1
1
23
Marking
123
Type Name
45
2002. 5. 8 1/3
Page 2
Q1ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : * Characteristic of Transistor Only.
Note : * Characteristic of Transistor Only.
Q2ELECTRICAL CHARACTERISTICS (Ta=25℃)
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=10㎃, IB=0.5㎃
- 0.1 0.3 V
Transition Frequency
fT *
VCE=10V, IC=5㎃
- 250 -
㎒
Input Resistor
R
I
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -100
㎁
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -100
㎁
DC Current Gain
h
FE
VCE=-5V, IC=-1㎃
120 - -
- 4.7 -
㏀
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
KRX105U
I
CBO
I
EBO
h
FE
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
V
CE(sat)
fT *
R
I
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistor
VCB=50V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1㎃
IC=-10㎃, IB=-0.5㎃
VCE=-10V, IC=-5㎃
- - 100
- - 100
120 - -
- 4.7 -
- -0.1 -0.3 V
- 250 -
㎁
㎁
㏀
㎒
2002. 5. 8 2/3
Revision No :2
Page 3
KRX105U
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
0.1
FE
300
0.31 3
2k
h - I
FE C
Q
0.3
COLLECTOR CURRENT I (mA)
0.1
COLLECTOR-EMITTER SATURATIN
CE(sat)
0.1
0.05
0.03
0.01
1
0.5
0.3
2
I /I =20
1031
Ta=-25 C
Ta=25 C
Ta=100 C
C
10030
C
V - I
CE(sat)C
VOLTAGE V (V)
C
-10-30 -100
10
30
50
100
500
1k
Ta=100 C
Ta=25 C
Ta=-25 C
V =-5V
CE
B
2
Q
2
Q
2
B
500
1
1k
Ta=100 C
Ta=25 C
Ta=-25 C
100
50
30
V =5V
CE
10
10 30 100
C
h - I
FE C
Q
2k
FE
300
DC CURRENT GAIN h
-0.1
-0.3 -1 -3
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER SATURATIN
CE(sat)
VOLTAGE V (V)
-2
-1
-0.5
-0.3
-0.1
-0.05
-0.03
-0.01
-0.1
I /I =20
C
Ta=100 C
Ta=-25 C
-0.3
COLLECTOR CURRENT I (mA)
V - I
CE(sat) C
Ta=25 C
-10-3-1
C
-100-30
2002. 5. 8 3/3
Revision No :2
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