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krc851e-856e
Datasheet
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Datasheet krc851e-856e Datasheet

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Page 1
2008. 11. 20 1/6
SEMICONDUCTOR
TECHNICAL DATA
KRC851E~KRC856E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
·High Packing Density.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25℃)
BIAS RESISTOR VALUES
MARK SPEC
TYPE NO.
R1(kΩ) R2(kΩ)
KRC851E 4.7 4.7 KRC852E 10 10 KRC853E 22 22 KRC854E 47 47 KRC855E 2.2 47 KRC856E 4.7 47
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
KRC851E～856E
V
O
50 V
Input Voltage
KRC851E
V
I
20, -10
V
KRC852E 30, -10 KRC853E 40, -10 KRC854E 40, -10 KRC855E 12, -5 KRC856E 20, -5
Output Current
KRC851E～856E
I
O
100 mA
Power Dissipation
PD*
200 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
TYPE KRC851E KRC852E KRC853E KRC854E KRC855E KRC856E
MARK NA NB NC ND NE NF
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Rating.
Marking
OUT
R1
IN
R2
COMMON
B
B1
1
C
A
A1
2
C
3
P
H
1. Q COMMON (EMITTER)
1
2. Q IN (BASE)
1
3. Q OUT (COLLECTOR)
2
4. Q COMMON (EMITTER)
2
5. Q IN (BASE)
2
6. Q OUT (COLLECTOR)
1
6
DIM MILLIMETERS
5
D
4
P
J
_
A
1.6 0.05
+ _
A1
1.0 0.05
+ _
1.6 0.05
+
B
_
B1
1.2 0.05
+
C
0.50 _
+
0.2 0.05
D
_ +
0.5 0.05
H
_ +
0.12 0.05
J
P5
TES6
65 4
Q1
Q2
1
23
456
Lot No.
Type Name
123
Page 2
2008. 11. 20 2/6
KRC851E~KRC856E
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : * Characteristic of Transistor Only.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current
KRC851E～856E
I
O(OFF)
VO=50V, VI=0
- - 500 nA
DC Current Gain
KRC851E
G
I
VO=5V, IO=10mA
30 55 ­KRC852E 50 80 ­KRC853E 70 120 ­KRC854E 80 200 ­KRC855E
80 200 ­KRC856E
80 200 -
Output Voltage
KRC851E～856E
V
O(ON)
IO=10mA, II=0.5mA
- 0.1 0.3 V
Input Voltage (ON)
KRC851E
V
I(ON)
VO=0.2V, IO=5mA
- 1.5 2.0
V
KRC852E - 1.8 2.4 KRC853E - 2.1 3.0 KRC854E - 2.8 5.0 KRC855E - 0.8 1.1 KRC856E - 0.9 1.3
Input Votlage (OFF)
KRC851E～854E
V
I(OFF)
VO=5V, IO=0.1mA
1.0 1.2 ­V
KRC855E～856E
0.5 0.65 -
Transition Frequency
KRC851E～856E
fT * VO=10V, IO=5mA
- 200 - MHz
Input Current
KRC851E
I
I
VI=5V
- - 1.8
mA
KRC852E - - 0.88 KRC853E - - 0.36 KRC854E - - 0.18 KRC855E - - 3.6 KRC856E - - 1.8
Input Resistor
KRC851E
R1 -
3.29 4.7 6.11
kΩ
KRC852E 7 10 13 KRC853E 15.4 22 28.6 KRC854E 32.9 47 61.1 KRC855E 1.54 2.2 2.86 KRC856E 3.29 4.7 6.11
Resistor Ratio
KRC851E～854E
R2/R1 -
0.8 1.0 1.2
KRC855E 17 21 26 KRC856E 8 10 12
Page 3
2008. 11. 20 3/6
KRC851E~KRC856E
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Switching Time
Rise Time
KRC851E
t
r
VO=5V V
IN
=5V
R
L
=1kΩ
- 0.03 -
μS
KRC852E - 0.05 ­KRC853E - 0.12 ­KRC854E - 0.22 ­KRC855E
- 0.01 -
KRC856E
- 0.03 -
Storage Time
KRC851E
t
stg
- 2.0 ­KRC852E - 2.0 ­KRC853E - 2.0 ­KRC854E - 2.0 ­KRC855E - 2.0 ­KRC856E - 2.0 -
Fall Time
KRC851E
t
f
- 0.12 ­KRC852E - 0.36 ­KRC853E - 0.35 ­KRC854E - 0.6 ­KRC855E - 0.1 ­KRC856E - 0.19 -
Page 4
2008. 11. 20 4/6
KRC851E~KRC856E
Revision No : 3
IO - V
I(ON)
KRC851E
100
V =0.2V
O
50 30
(mA)
O
10
5
3
1
0.5 0.5
OUTPUT CURRENT I
0.3
0.1 100
0.3 1 3 10 30
Ta=25 C
Ta=-25 C
Ta=100 C
INPUT ON VOLTAGE V
IO - V
I(ON)
KRC853E
100
V =0.2V
O
50 30
(mA)
O
25
-25
100
(V)
I(ON)
KRC852E
100
V =0.2V
O
50 30
(mA)
O
10
5
3
1
OUTPUT CURRENT I
0.3
INPUT ON VOLTAGE V
KRC854E
100
V =0.2V
O
50 30
(mA)
O
IO - V
Ta=100 C
IO - V
I(ON)
Ta=25 C
Ta=-25 C
I(ON)
I(ON)
3010310.3
(V)
1000.1
10
5
3
1
0.5
OUTPUT CURRENT I
0.3
INPUT ON VOLTAGE V
KRC855E
100
V =0.2V
O
50 30
(mA)
O
10
5
3
1
0.5
OUTPUT CURRENT I
0.3
0.1 100
Ta=100 C
0.3 1 3 10 30
Ta=25 C
Ta=100 C
IO - V
Ta=25 C
Ta=-25 C
Ta=-25 C
I(ON)
I(ON)
3010310.3
(V)
10
5
3
1
0.5
OUTPUT CURRENT I
0.3
0.1 100
1000.1
0.3 1 3 10 30
Ta=100 C
INPUT ON VOLTAGE V
IO - V
KRC856E
100
V =0.2V
O
50 30
(mA)
O
10
5
3
1
0.5
OUTPUT CURRENT I
0.3
Ta=100 C
Ta=25 C
Ta=-25 C
Ta=25 C
Ta=-25 C
I(ON)
I(ON)
(V)
3010310.3
1000.1
INPUT ON VOLTAGE V
I(ON)
(V)
INPUT ON VOLTAGE V
I(ON)
(V)
Page 5
2008. 11. 20 5/6
KRC851E~KRC856E
Revision No : 3
KRC851E
10k
5k
(µA)
3k
O
1k
500 300
100
OUTPUT CURRENT I
50 30
0.6
Ta=100 C
0.8 1.0 1.2 1.4 1.6 1.8 2.0
INPUT OFF VOLTAGE V
KRC853E
10k
5k
(µA)
3k
O
IO - V
Ta=25 C
IO - V
I(OFF)
Ta=-25 C
I(OFF)
IO - V
I(OFF)
KRC852E
V =5V
O O
(V) INPUT OFF VOLTAGE V
I(OFF)
V =5V
O
10k
5k
(µA)
3k
O
1k
500 300
100
OUTPUT CURRENT I
50 30
0.6
KRC854E
10k
5k
(µA)
3k
O
a=100 C
T
Ta=25 C
IO - V
I(OFF)
Ta=-25 C
I(OFF)
V =5V
(V)
V =5V
O
2.01.81.61.41.21.00.8
1k
500 300
100
OUTPUT CURRENT I
50 30
0.6
Ta=100 C
INPUT OFF VOLTAGE V
KRC855E
10k
5k
3k
(µA)
O
1k
500 300
100
OUTPUT CURRENT I
50 30
0
Ta=25 C
IO - V
Ta=25 C
Ta=100 C
I(OFF)
Ta=-25 C
Ta=-25 C
I(OFF)
(V)
V =5V
O
1k
500 300
100
OUTPUT CURRENT I
50
2.01.81.61.41.21.00.8
30
Ta=100 C
0.8 1.0 1.2 1.4 1.6 1.8 2.0
INPUT OFF VOLTAGE V
KRC856E
10k
5k
(µA)
3k
O
1k
500 300
100
OUTPUT CURRENT I
50
1.41.21.00.80.60.40.2
30
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Ta=25 C
IO - V
Ta=100 C
I(OFF)
C
Ta=25
Ta=-25 C
Ta=-25 C
I(OFF)
(V)
V =5V
O
INPUT OFF VOLTAGE V
I(OFF)
(V)
INPUT OFF VOLTAGE V
I(OFF)
(V)
Page 6
2008. 11. 20 6/6
KRC851E~KRC856E
Revision No : 3
KRC851E KRC852E
300
V =5V
I
DC CURRENT GAIN G
O
100
50
30
10
5
0.5 1 3 10
OUTPUT CURRENT IO (mA)
KRC853E KRC854E
300
I
100
50
30
GI - I
GI - I
Ta=100 C
O
O
Ta=-25 C
Ta=100 C
Ta=25 C
Ta=-25 C
30 100
Ta=25 C
300
V =5V
I
100
DC CURRENT GAIN G
O
50
30
10
5
OUTPUT CURRENT IO (mA)
300
I
100
50
30
Ta=100 C
GI - I
GI - I
O
10310.5
O
Ta=100 C
Ta=25 C
Ta=-25 C
Ta=25 C
Ta=-25 C
10030
10
DC CURRENT GAIN G
5
OUTPUT CURRENT IO (mA)
KRC855E KRC856E
300
I
100
50
30
DC CURRENT GAIN G
10
5
Ta=100 C
OUTPUT CURRENT I
GI - I
10310.5
O
Ta=25 C
Ta=-25 C
10310.5
(mA)
O
V =5V
O
V =5V
O
10
DC CURRENT GAIN G
5
10030
0.5 1 3 10
OUTPUT CURRENT I
GI - I
O
300
I
100
50
30
10
DC CURRENT GAIN G
10030
5
0.5 1 3 10
Ta=100 C
Ta=25 C
Ta=-25 C
OUTPUT CURRENT I
30 100
(mA)
O
V =5V
30 100
(mA)
O
VO=5V
O
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