
2008. 9. 23 1/6
SEMICONDUCTOR
TECHNICAL DATA
KRC836E~KRC842E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
MARK SPEC
TYPE NO.
R1(k ) R2(k )
KRC836E 1 10
KRC837E 2.2 2.2
KRC838E 2.2 10
KRC839E 4.7 10
KRC840E 10 4.7
KRC841E 47 10
KRC842E 100 100
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage KRC836E~842E
V
O
50 V
Input Voltage
KRC836E
V
I
10, -5
V
KRC837E 12, -10
KRC838E 12,-5
KRC839E 20, -7
KRC840E 30, -10
KRC841E 40, -15
KRC842E 40, -10
Output Current
KRC836E~842E
I
O
100 mA
Power Dissipation
PD *
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE KRC836E KRC837E KRC838E KRC839E KRC840E KRC841E KRC842E
MARK Y2 Y4 Y5 Y6 Y7 Y8 Y9
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Rating.
Marking
R1
IN
OUT
R2
COMMON
B
B1
1
C
A
A1
2
C
3
P
H
1. Q COMMON (EMITTER)
1
2. Q COMMON (EMITTER)
2
3. Q IN (BASE)
2
4. Q OUT (COLLECTOR)
2
5. Q IN (BASE)
1
6. Q OUT (COLLECTOR)
1
6
DIM MILLIMETERS
5
D
4
P
J
_
A
1.6 0.05
+
_
A1
1.0 0.05
+
_
1.6 0.05
+
B
_
B1
1.2 0.05
+
C
0.50
_
+
0.2 0.05
D
_
+
0.5 0.05
H
_
+
0.12 0.05
J
P5
TES6
65 4
Q1
1
23
Q2
456
Lot No.
Type Name
123

2008. 9. 23 2/6
KRC836E~KRC842E
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current KRC836E~842E
I
O(OFF)
VO=50V, VI=0
- - 500 nA
DC Current Gain
KRC836E
G
I
VO=5V, IO=5mA
33 - -
KRC837E
VO=5V, IO=20mA
20 - -
KRC838E
VO=5V, IO=10mA
33 - -
KRC839E
VO=5V, IO=10mA
30 - -
KRC840E
VO=5V, IO=10mA
24 - -
KRC841E
VO=5V, IO=5mA
33 - -
KRC842E
VO=5V, IO=5mA
62 - -
Output Voltage
KRC836E
V
O(ON)
IO=10mA, II=0.5mA
- - 0.3
V
KRC837E
IO=10mA, II=0.5mA
- 0.1 0.3
KRC838E
IO=10mA, II=0.5mA
- - 0.3
KRC839E
IO=10mA, II=0.5mA
- 0.1 0.3
KRC840E
IO=10mA, II=0.5mA
- 0.1 0.3
KRC841E
IO=10mA, II=0.5mA
- 0.1 0.3
KRC842E
IO=5mA, II=0.25mA
- 0.1 0.3
Input Voltage (ON)
KRC836E
V
I(ON)
VO=0.3V, IO=20mA
- 0.98 3
V
KRC837E
VO=0.3V, IO=20mA
- 1.83 3
KRC838E
VO=0.3V, IO=20mA
- 1.22 3
KRC839E
VO=0.3V, IO=20mA
- 1.76 2.5
KRC840E
VO=0.3V, IO=2mA
- 2 3
KRC841E
VO=0.3V, IO=2mA
- 3.9 5
KRC842E
VO=0.3V, IO=1mA
- 1.64 3
Input Voltage (OFF)
KRC836E
V
I(OFF)
VCC=5V, IO=100 A
0.3 0.63 -
V
KRC837E 0.5 1.15 KRC838E 0.3 0.67 KRC839E 0.3 0.82 KRC840E 0.8 1.68 KRC841E 1 3.09 KRC842E 0.5 1.17 -
Transition Frequency KRC836E~842E
fT* VO=10V, IO=5mA
- 250 - MHz
Input Current
KRC836E
I
I
VI=5V
- - 7.2
mA
KRC837E - - 3.8
KRC838E - - 3.8
KRC839E - - 1.8
KRC840E - - 0.88
KRC841E - - 0.16
KRC842E - - 0.15
Note : * Characteristic of Transistor Only.

2008. 9. 23 3/6
KRC836E~KRC842E
Revision No : 3
IO - V
KRC836E
100
50
(mA)
30
O
10
5
3
1
0.5
OUTPUT CURRENT I
0.3
0.1 0.3 1 3
Ta=100 C
INPUT ON VOLTAGE V
IO - V
KRC836E
3k
(µA)
O
1k
I(ON)
Ta=25 C
Ta=-25 C
I(OFF)
I(ON)
VO = 0.2V
(V)
IO - V
I(ON)
KRC837E
100
50
30
(mA)
O
10
5
3
1
0.5
0.3
Ta=100 C
OUTPUT CURRENT I
0.1
10
0.1
0.3
13
INPUT ON VOLTAGE V
IO - V
KRC837E
3k
(µA)
O
1k
I(OFF)
Ta=25 C
Ta=-25 C
I(ON)
VO = 0.2V
10
(V)
500
300
100
50
OUTPUT CURRENT I
30
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
INPUT OFF VOLTAGE V
KRC836E
200
I
100
50
30
Ta=100 C
DC CURRENT GAIN G
10
13
Ta=25 C
Ta=100 C
Ta=-25 C
GI - I
O
Ta=25 C
T
a=-25 C
10 30 100
I(OFF)
VO = 5V
(V)
= 5V
V
O
500
300
100
50
OUTPUT CURRENT I
30
Ta=100 C
0.5 2.01.5 2.5
INPUT OFF VOLTAGE V
KRC837E
300
I
100
50
30
10
DC CURRENT GAIN G
5
3
Ta=100 C
31
Ta=25 C
Ta=-25 C
I(OFF)
GI - I
O
Ta=25 C
Ta=-25 C
10 30 100
V
O
(V)
V
O
= 5V
3.01.00
= 5V
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (mA)