Page 1
2008. 11. 20 1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC830F~KRC834F
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
·High Packing Density.
·Thin Fine Pitch Super mini 6 pin Package.
EQUIVALENT CIRCUIT
MARK SPEC
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
20 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
50 mA
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
P
C
*
50 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
55～150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=20V, IE=0
- - 100 nA
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 100 nA
DC Current Gain
h
FE
VCE=5V, IC=1mA
300 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=5mA, IB=0.25mA
- - 0.15 V
Collector output capacitance
C
ob
VCB=10V, IE=0, fT=1MHz
- 1.2 - pF
Input Resistor
KRC830F
R
1
-
3.29 4.7 6.11
㏀
KRC831F 7 10 13
KRC833F 15.4 22 28.6
KRC834F 32.9 47 61.1
* Total Rating.
TYPE KRC830F KRC831F KRC833F KRC834F
MARK NK NL NN NP
R1
B
C
E
65 4
Q1
1
23
Q2
B
B1
A
A1
1
CC
2
3
H
1. Q1 EMITTER
EMITTER
2. Q
2
3. Q
BASE
2
COLLECTOR
4. Q
2
BASE
5. Q
1
6. Q
COLLECTOR
1
6
DIM MILLIMETERS
5
A
A1
D
B
4
B1
C
D
H
T 0.1 0.05
T
_
+
1.0 0.05
_
+
0.7 0.05
_
+
1.0 0.05
_
+
0.8 0.05
0.35
_
+
0.15 0.05
0.38+0.02/-0.04
_
+
TFS6
Type Name
6
54
123
Page 2
2008. 11. 20 2/4
KRC830F~KRC834F
Revision No : 3
IO - V
I(ON)
KRC830F KRC830F
100
VO= 0.2V
(mA)
O
10
Ta =100
C
Ta =25
C
Ta =-25
GI - I
C
101 100
(V)
I(ON)
O
OUTPUT CURRENT I
1
0.1
INPUT ON VOLTAGE V
KRC830F KRC830F
1000
I
10000
VO= 5V
(µA)
O
1000
Ta =100
C
100
OUTPUT CURRENT I
10
INPUT OFF VOLTAGE V
1.00
G
= 20
I
IO - V
V
O(ON)
I(OFF)
Ta =25
Ta =-25
- I
C
C
1.00.4 1.20.6 1.40.20.0 0.8
(V)
I(OFF)
O
Ta =100
C
Ta =25
C
Ta =-25
C
100
DC CURRENT GAIN G
= 5V
V
O
10
1 100
10
OUTPUT CURRENT IO (mA)
IO - V
I(ON)
KRC831F KRC831F
100
VO= 0.2V
(mA)
O
10
Ta =100
C
Ta =25
C
Ta =-25
C
OUTPUT CURRENT I
1
0.1 1 10 100
0.10
OUTPUT ON VOLTAGE (V)
0.01
1 10010
OUTPUT CURRENT IO (mA)
IO - V
10000
(µA)
O
1000
OUTPUT CURRENT I
100
V
= 5V
O
C
C
Ta =25
Ta =100
Ta =-25
10
Ta =100
C
I(OFF)
1.00.4 1.20.6 1.4 1.60.0 0.2 0.8
C
Ta =-25
Ta =25
C
C
INPUT ON VOLTAGE V
I(ON)
(V)
INPUT OFF VOLTAGE V
I(OFF)
(V)
Page 3
2008. 11. 20 3/4
KRC830F~KRC834F
Revision No : 3
GI - I
O
KRC831F KRC831F
1000
I
Ta =100
C
Ta =25
C
Ta =-25
C
100
DC CURRENT GAIN G
10
1 10010
= 5V
V
O
V
O(ON)
1.00
GI= 20
0.10
OUTPUT ON VOLTAGE (V)
0.01
1 10010
- I
Ta =100
O
C
Ta =25
Ta =-25
C
C
OUTPUT CURRENT IO (mA)
IO - V
I(ON)
KRC833F
100
= 0.2V
V
O
(mA)
O
10
Ta =100
C
Ta =25
C
Ta =-25
C
OUTPUT CURRENT I
1
0.1 1 10 100
INPUT ON VOLTAGE V
GI - I
I(ON)
O
(V)
OUTPUT CURRENT IO (mA)
KRC833F
10000
V
= 5V
O
(µA)
O
1000
100
Ta =
OUTPUT CURRENT I
10
INPUT OFF VOLTAGE V
IO - V
C
100
V
C
Ta =25
O(ON)
I(OFF)
C
Ta =-25
- I
1.00.4 1.20.6 1.40.0 0.2 0.8
(V)
I(OFF)
O
KRC833F
1000
I
Ta =100
C
Ta =25
C
Ta =-25
C
100
DC CURRENT GAIN G
V
= 5V
O
10
1 10010
OUTPUT CURRENT IO (mA)
KRC833F
1.00
GI= 20
0.10
Ta =100
OUTPUT ON VOLTAGE (V)
0.01
1 10010
OUTPUT CURRENT IO (mA)
C
Ta =-25
Ta =25
C
C
Page 4
2008. 11. 20 4/4
KRC830F~KRC834F
Revision No : 3
IO - V
I(ON)
KRC834F
100
= 0.2V
V
O
(mA)
O
10
Ta =100
C
Ta =25
C
Ta =-25
C
OUTPUT CURRENT I
1
0.1 1 10 100
INPUT ON VOLTAGE V
GI - I
KRC834F
1000
I
I(ON)
O
(V)
KRC834F
10000
V
= 5V
O
(µA)
O
1000
100
OUTPUT CURRENT I
10
INPUT OFF VOLTAGE V
KRC834F
1.00
GI= 20
IO - V
C
Ta =100
Ta =25
V
C
O(ON)
I(OFF)
C
Ta =-25
- I
1.00.4 1.20.6 1.40.0 0.2 0.8
(V)
I(OFF)
O
Ta =100
C
Ta =25
100
DC CURRENT GAIN G
10
1 10010
OUTPUT CURRENT IO (mA)
C
Ta =-25
C
Ta =100
C
0.10
Ta =25
C
Ta =-25
C
= 5V
V
O
OUTPUT ON VOLTAGE (V)
0.01
1 10010
OUTPUT CURRENT IO (mA)
Loading...