Page 1
SEMICONDUCTOR
KRC827E~KRC829E
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
BIAS RESISTOR VALUES
TYPE NO.
KRC827E 10 47
KRC828E 22 47
KRC829E 47 22
R1(kή) R2(kή)
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
C
A
A1
2
C
3
P
H
1. Q COMMON (EMITTER)
1
2. Q COMMON (EMITTER)
2
3. Q IN (BASE)
2
4. Q OUT (COLLECTOR)
2
5. Q IN (BASE)
1
6. Q OUT (COLLECTOR)
1
6
DIM MILLIMETERS
5
D
4
P
J
_
+
A
1.6 0.05
_
+
A1
1.0 0.05
_
B
1.6 0.05
+
_
B1
1.2 0.05
+
C
0.50
_
D
0.2 0.05
+
_
H
0.5 0.05
+
_
J
0.12 0.05
+
P5
TES6
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
KRC827Eᴕ829E
KRC827E
Input Voltage
KRC829E 40,-15
Output Current
Power Dissipation
Junction Temperature
KRC827Eᴕ829E
Storage Temperature Range
* Total Rating.
MARK SPEC
TYPE KRC827E KRC828E KRC829E
V
V
I
O
PD *
T
T
stg
O
I
j
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
Q1
1
23
50 V
30, -6
100 mA
200 mW
150
-55ᴕ150
Marking
6
Type Name
54
Q2
VKRC828E 40, -7
ᴱ
ᴱ
MARK YH YI YJ
123
2002. 1. 24 1/4
Revision No : 1
Page 2
KRC827E~KRC829E
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current
DC Current Gain
Output Voltage
Input Voltage (ON)
Input Votlage (OFF)
Transition Frequency
Input Current
Rise
Time
KRC827Eᴕ829E
I
O(OFF)
KRC827E
KRC828E 80 150 -
G
I
VO=50V, VI=0
VO=5V, IO=10mA
- - 500 nA
80 150 -
KRC829E 70 140 -
KRC827Eᴕ829E
KRC827E
V
V
O(ON)
I(ON)
IO=10mA, II=0.5mA
VO=0.2V, IO=5mA
- 0.1 0.3 V
- 1.2 1.8
KRC829E - 3.0 5.8
KRC827E
V
I(OFF)
VO=5V, IO=0.1mA
0.5 0.75 -
KRC829E 1.5 1.82 -
KRC827Eᴕ829E
KRC827E
fT * VO=10V, IO=5mA
I
I
VI=5V
- 200 - MHz
- - 0.88
KRC829E - - 0.16
KRC827E
KRC828E - 0.12 -
t
r
- 0.05 -
KRC829E - 0.26 -
VKRC828E - 1.8 2.6
VKRC828E 0.6 0.88 -
mAKRC828E - - 0.36
KRC827E
Switching
Time
Storage
Time
KRC828E - 2.4 -
KRC829E - 1.5 -
KRC827E
Fall
Time
KRC828E - 0.4 -
KRC829E - 0.41 -
Note : * Characteristic of Transistor Only.
t
stg
VO=5V, VIN=5V
R
=1kή
L
ỌS
- 0.36 -
t
f
- 2.0 -
2002. 1. 24 2/4
Revision No : 1
Page 3
KRC827E~KRC829E
KRC827E
50
V =0.2V
30
O
O
10
5
3
C
0
Ta=10
1
OUTPUT CURRENT I (mA)
0.5
0.3
0.1 0.3 1 3
INPUT ON VOLTAGE V (V)
KRC828E
50
V =0.2V
30
O
I - V
O I(ON)
-25
Ta=25 C
Ta=-25 C
I - V
O I(ON)
25
100
10 30 100
I(ON)
OUTPUT CURRENT I (µA)
I - V
KRC827E
3k
1k
O
500
300
OI(OFF)
C
C
C
Ta=100
5
=25
=-2
Ta
Ta
100
50
V =5V
O
30
3k
0
INPUT OFF VOLTAGE V (V)
I - V
KRC828E
OI(OFF)
I(OFF)
1.61.41.21.00.80.60.40.2
10
O
5
3
Ta=
1
0.5
OUTPUT CURRENT I (mA)
0.3
INPUT ON VOLTAGE V (V)
KRC829E
50
V =0.2V
30
O
10
O
5
3
100 C
I - V
O I(ON)
Ta=100
Ta=25 C
Ta=-25 C
310.30.1
C
Ta=25 C
I(ON)
Ta=-25 C
1k
O
500
300
Ta
=10
C
C
0
25
Ta=
Ta=-25 C
100
OUTPUT CURRENT I (µA)
50
V =5V
O
30
3k
0
INPUT OFF VOLTAGE V (V)
I - V
KRC829E
OI(OFF)
I(OFF)
1003010
1.61.41.21.00.80.60.40.2
1k
O
500
300
C
Ta=100
Ta=25 C
Ta=-
C
25
OUTPUT CURRENT I (µA)
100
50
V =5V
O
30
3.4
3.02.62.21.81.41.00.60.2
INPUT OFF VOLTAGE V (V)
I(OFF)
1
0.5
OUTPUT CURRENT I (mA)
0.3
INPUT ON VOLTAGE V (V)
2002. 1. 24 3/4
310.30.1
I(ON)
Revision No : 1
1003010
Page 4
KRC827E~KRC829E
KRC827E KRC828E
1k
V =5V
O
I
500
300
100
DC CURRENT GAIN G
50
30
1 3 10 30
OUTPUT CURRENT I (mA)
KRC829E
1k
V =5V
O
500
I
300
G - I
IO
G - I
IO
Ta=100 C
Ta=100 C
Ta=25 C
Ta=-25 C
O
100
1k
V =5V
O
500
I
300
100
50
DC CURRENT GAIN G
20
13
OUTPUT CURRENT I (mA)
G - I
IO
10
Ta=100 C
Ta=25 C
Ta=-25 C
O
30 100
100
50
DC CURRENT GAIN G
20
OUTPUT CURRENT I (mA)
Ta=25 C
Ta=-25 C
100301031
O
2002. 1. 24 4/4
Revision No : 1
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