Page 1
2008. 9. 23 1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC827E~KRC829E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
BIAS RESISTOR VALUES
MARK SPEC
EQUIVALENT CIRCUIT (TOP VIEW)
TYPE NO.
R1(k ) R2(k )
KRC827E 10 47
KRC828E 22 47
KRC829E 47 22
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
KRC827E 829E
V
O
50 V
Input Voltage
KRC827E
V
I
30, -6
VKRC828E 40, -7
KRC829E 40,-15
Output Current
KRC827E 829E
I
O
100 mA
Power Dissipation
PD *
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE KRC827E KRC828E KRC829E
MARK YH YI YJ
* Total Rating.
Marking
R1
IN
R2
COMMON
OUT
B
B1
1
C
A
A1
2
C
3
P
H
1. Q COMMON (EMITTER)
1
2. Q COMMON (EMITTER)
2
3. Q IN (BASE)
2
4. Q OUT (COLLECTOR)
2
5. Q IN (BASE)
1
6. Q OUT (COLLECTOR)
1
6
DIM MILLIMETERS
5
D
4
P
J
_
A
1.6 0.05
+
_
A1
1.0 0.05
+
_
1.6 0.05
+
B
_
B1
1.2 0.05
+
C
0.50
_
+
0.2 0.05
D
_
+
0.5 0.05
H
_
+
0.12 0.05
J
P5
TES6
65 4
Q1
1
23
Q2
Type Name
456
Lot No.
123
Page 2
2008. 9. 23 2/4
KRC827E~KRC829E
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : * Characteristic of Transistor Only.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current
KRC827E 829E
I
O(OFF)
VO=50V, VI=0
- - 500 nA
DC Current Gain
KRC827E
G
I
VO=5V, IO=10mA
80 150 KRC828E 80 150 KRC829E 70 140 -
Output Voltage
KRC827E 829E
V
O(ON)
IO=10mA, II=0.5mA
- 0.1 0.3 V
Input Voltage (ON)
KRC827E
V
I(ON)
VO=0.2V, IO=5mA
- 1.2 1.8
VKRC828E - 1.8 2.6
KRC829E - 3.0 5.8
Input Votlage (OFF)
KRC827E
V
I(OFF)
VO=5V, IO=0.1mA
0.5 0.75 VKRC828E 0.6 0.88 -
KRC829E 1.5 1.82 -
Transition Frequency
KRC827E 829E
fT * VO=10V, IO=5mA
- 200 - MHz
Input Current
KRC827E
I
I
VI=5V
- - 0.88
mAKRC828E - - 0.36
KRC829E - - 0.16
Switching
Time
Rise
Time
KRC827E
t
r
VO=5V, VIN=5V
R
L
=1k
- 0.05 -
S
KRC828E - 0.12 KRC829E - 0.26 -
Storage
Time
KRC827E
t
stg
- 2.0 -
KRC828E - 2.4 KRC829E - 1.5 -
Fall
Time
KRC827E
t
f
- 0.36 -
KRC828E - 0.4 KRC829E - 0.41 -
Page 3
2008. 9. 23 3/4
KRC827E~KRC829E
Revision No : 2
KRC827E
50
V =0.2V
30
O
(mA)
O
10
5
3
Ta=100 C
1
0.5
OUTPUT CURRENT I
0.3
0.1 0.3 1 3
INPUT ON VOLTAGE V
KRC828E
50
V =0.2V
30
O
(mA)OUTPUT CURRENT I
O
10
5
3
1
0.5
OUTPUT CURRENT I
0.3
IO - V
Ta=25 C
Ta=-25 C
IO - V
Ta=100 C
I(ON)
-25
I(ON)
Ta=25 C
Ta=-25 C
310.30.1
25
100
10 30 100
(V)
I(ON)
1003010
KRC827E
3k
(µA)
O
1k
500
300
100
50
OUTPUT CURRENT I
30
0
INPUT OFF VOLTAGE V
KRC828E
3k
(µA)
O
1k
500
300
100
50
OUTPUT CURRENT I
30
0
IO - V
Ta=100 C
IO - V
Ta=100 C
I(OFF)
Ta=25 C
Ta=-25 C
I(OFF)
V =5V
O
1.61.41.21.00.80.60.40.2
(V)
I(OFF)
C
Ta=25
a=-25 C
T
V =5V
O
1.61.41.21.00.80.60.40.2
50
30
(mA)
O
10
0.5
0.3
5
3
1
INPUT ON VOLTAGE V
IO - V
KRC829E
V =0.2V
O
Ta=100
INPUT ON VOLTAGE V
C
I(ON)
310.30.1
Ta=25 C
Ta=-25 C
I(ON)
I(ON)
(V)
(V)
INPUT OFF VOLTAGE V
IO - V
KRC829E
3k
(µA)
O
1k
500
300
100
50
OUTPUT CURRENT I
1003010
30
Ta=100 C
I(OFF)
a=25 C
T
INPUT OFF VOLTAGE V
I(OFF)
Ta=-25 C
I(OFF)
(V)
V =5V
O
3.02.62.21.81.41.00.60.2
(V)
3.4
Page 4
2008. 9. 23 4/4
KRC827E~KRC829E
Revision No : 2
GI - I
KRC827E KRC828E
1k
V =5V
I
500
300
100
DC CURRENT GAIN G
O
50
30
131030
OUTPUT CURRENT IO (mA)
GI - I
KRC829E
1k
V =5V
I
500
300
O
O
Ta=100 C
Ta=-25 C
O
Ta=100 C
Ta=25 C
100
1k
V =5V
I
O
500
300
100
50
DC CURRENT GAIN G
20
13
OUTPUT CURRENT IO (mA)
GI - I
10
O
Ta=100 C
Ta=25 C
Ta=-25 C
30 100
100
50
DC CURRENT GAIN G
20
OUTPUT CURRENT IO (mA)
Ta=25 C
Ta=-25 C
100301031
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