
2008. 11. 20 1/6
SEMICONDUCTOR
TECHNICAL DATA
KRC821E~KRC826E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
BIAS RESISTOR VALUES
TYPE NO.
R1(k ) R2(k )
KRC821E 4.7 4.7
KRC822E 10 10
KRC823E 22 22
KRC824E 47 47
KRC825E 2.2 47
KRC826E 4.7 47
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
KRC821E 826E
V
O
50 V
Input Voltage
KRC821E
V
I
20, -10
V
KRC822E 30, -10
KRC823E 40, -10
KRC824E 40, -10
KRC825E 12, -5
KRC826E 20, -5
Output Current
KRC821E 826E
I
O
100 mA
Power Dissipation
PD*
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE KRC821E KRC822E KRC823E KRC824E KRC825E KRC826E
MARK YA YB YC YD YE YF
* Total Rating.
Marking
R1
IN
R2
COMMON
OUT
B
B1
1
C
A
A1
2
C
3
P
H
1. Q COMMON (EMITTER)
1
2. Q COMMON (EMITTER)
2
3. Q IN (BASE)
2
4. Q OUT (COLLECTOR)
2
5. Q IN (BASE)
1
6. Q OUT (COLLECTOR)
1
6
DIM MILLIMETERS
5
D
4
P
J
_
A
1.6 0.05
+
_
A1
1.0 0.05
+
_
1.6 0.05
+
B
_
B1
1.2 0.05
+
C
0.50
_
+
0.2 0.05
D
_
+
0.5 0.05
H
_
+
0.12 0.05
J
P5
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
Q1
1
23
Q2
456
Lot No.
Type Name
123

2008. 11. 20 2/6
KRC821E~KRC826E
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : * Characteristic of Transistor Only.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current
KRC821E 826E
I
O(OFF)
VO=50V, VI=0
- - 500 nA
DC Current Gain
KRC821E
G
I
VO=5V, IO=10mA
30 55 KRC822E 50 80 KRC823E 70 120 KRC824E 80 200 KRC825E
80 200 KRC826E
80 200 -
Output Voltage
KRC821E 826E
V
O(ON)
IO=10mA, II=0.5mA
- 0.1 0.3 V
Input Voltage (ON)
KRC821E
V
I(ON)
VO=0.2V, IO=5mA
- 1.5 2.0
V
KRC822E - 1.8 2.4
KRC823E - 2.1 3.0
KRC824E - 2.8 5.0
KRC825E - 0.8 1.1
KRC826E - 0.9 1.3
Input Votlage (OFF)
KRC821E 824E
V
I(OFF)
VO=5V, IO=0.1mA
1.0 1.2 V
KRC825E 826E
0.5 0.65 -
Transition Frequency
KRC821E 826E
fT * VO=10V, IO=5mA
- 200 - MHz
Input Current
KRC821E
I
I
VI=5V
- - 1.8
mA
KRC822E - - 0.88
KRC823E - - 0.36
KRC824E - - 0.18
KRC825E - - 3.6
KRC826E - - 1.8
Input Resistor
KRC821E
R1 -
3.29 4.7 6.11
kΩ
KRC822E 7 10 13
KRC823E 15.4 22 28.6
KRC824E 32.9 47 61.1
KRC825E 1.54 2.2 2.86
KRC826E 3.29 4.7 6.11
Resistor Ratio
KRC821E 824E
R2/R1 -
0.8 1.0 1.2
KRC825E 17 21 26
KRC826E 8 10 12

2008. 11. 20 3/6
KRC821E~KRC826E
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Switching
Time
Rise Time
KRC821E
t
r
VO=5V
V
IN
=5V
R
L
=1k
- 0.03 -
S
KRC822E - 0.05 KRC823E - 0.12 KRC824E - 0.22 KRC825E
- 0.01 -
KRC826E
- 0.03 -
Storage Time
KRC821E
t
stg
- 2.0 KRC822E - 2.0 KRC823E - 2.0 KRC824E - 2.0 KRC825E - 2.0 KRC826E - 2.0 -
Fall Time
KRC821E
t
f
- 0.12 KRC822E - 0.36 KRC823E - 0.35 KRC824E - 0.6 KRC825E - 0.1 KRC826E - 0.19 -

2008. 11. 20 5/6
KRC821E~KRC826E
Revision No : 3
KRC821E
10k
5k
(µA)
3k
O
1k
500
300
100
OUTPUT CURRENT I
50
30
0.6
Ta=100 C
0.8 1.0 1.2 1.4 1.6 1.8 2.0
INPUT OFF VOLTAGE V
KRC823E
10k
5k
(µA)
3k
O
IO - V
Ta=25 C
IO - V
I(OFF)
Ta=-25 C
I(OFF)
IO - V
I(OFF)ON
KRC822E
V =5V
O O
(V)
I(OFF)
V =5V
O
10k
5k
(µA)
3k
O
1k
500
300
100
OUTPUT CURRENT I
50
30
0.6
Ta=100 C
INPUT OFF VOLTAGE V
KRC824E
10k
5k
3k
(µA)
O
Ta=25 C
IO - V
I(OFF)
Ta=-25 C
I(OFF)
V =5V
(V)
V =5V
O
2.01.81.61.41.21.00.8
1k
500
300
100
OUTPUT CURRENT I
50
30
0.6
Ta=100 C
INPUT OFF VOLTAGE V
KRC825E
10k
5k
(µA)
3k
O
1k
500
300
100
OUTPUT CURRENT I
50
30
0
Ta=25 C
IO - V
Ta=25 C
Ta=100 C
I(OFF)
Ta=-25 C
Ta=-25 C
I(OFF)
(V)
V =5V
O
1k
500
300
100
OUTPUT CURRENT I
50
2.01.81.61.41.21.00.8
30
Ta=100 C
0.8 1.0 1.2 1.4 1.6 1.8 2.0
INPUT OFF VOLTAGE V
KRC826E
10k
5k
(µA)
3k
O
1k
500
300
100
OUTPUT CURRENT I
50
1.41.21.00.80.60.40.2
30
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Ta=25 C
IO - V
Ta=100 C
I(OFF)
C
Ta=25
Ta=-25 C
Ta=-25 C
I(OFF)
(V)
V =5V
O
INPUT OFF VOLTAGE V
(V) INPUT OFF VOLTAGE V
I(OFF)
I(OFF)
(V)