
2008. 11. 20 1/6
SEMICONDUCTOR
TECHNICAL DATA
KRC666E~KRC672E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25℃)
MARK SPEC
TYPE NO.
R1(kΩ) R2(kΩ)
KRC666E 1 10
KRC667E 2.2 2.2
KRC668E 2.2 10
KRC669E 4.7 10
KRC670E 10 4.7
KRC671E 47 10
KRC672E 100 100
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage KRC666E~672E
V
O
50 V
Input Voltage
KRC666E
V
I
10, -5
V
KRC667E 12, -10
KRC668E 12,-5
KRC669E 20, -7
KRC670E 30, -10
KRC671E 40, -15
KRC672E 40, -10
Output Current
KRC666E~672E
I
O
100 mA
Power Dissipation
PD*
200 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55~150
℃
TYPE KRC666E KRC667E KRC668E KRC669E KRC670E KRC671E KRC672E
MARK N2 N4 N5 N6 N7 N8 N9
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
* Total Rating.
R1
IN
OUT
R2
COMMON
B
B1
1
C
A
A1
2
C
3
P
H
1. D1 ANODE
2. COMMON (EMITTER)
3. Q IN (BASE)
2
4. Q OUT (COLLECTOR)
2
5. Q OUT (COLLECTOR)
1
5
DIM MILLIMETERS
A
A1
B
B1
D
4
P
C
D
H
P5
J
_
1.6 0.05
+
_
+
1.0 0.05
_
+
1.6 0.05
_
+
1.2 0.05
0.50
_
+
0.2 0.05
_
+
0.5 0.05
_
J
+
0.12 0.05
TESV
54
Q1
1
Q2
23
45
Lot No.
Type Name
123

2008. 11. 20 2/6
KRC666E~KRC672E
Revision No : 4
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current KRC666E~672E
I
O(OFF)
VO=50V, VI=0
- - 500 nA
DC Current Gain
KRC666E
G
I
VO=5V, IO=5mA
33 - -
KRC667E
VO=5V, IO=20mA
20 - -
KRC668E
VO=5V, IO=10mA
33 - -
KRC669E
VO=5V, IO=10mA
30 - -
KRC670E
VO=5V, IO=10mA
24 - -
KRC671E
VO=5V, IO=5mA
33 - -
KRC672E
VO=5V, IO=5mA
62 - -
Output Voltage
KRC666E
V
O(ON)
IO=10mA, II=0.5mA
- - 0.3
V
KRC667E
IO=10mA, II=0.5mA
- 0.1 0.3
KRC668E
IO=10mA, II=0.5mA
- - 0.3
KRC669E
IO=10mA, II=0.5mA
- 0.1 0.3
KRC670E
IO=10mA, II=0.5mA
- 0.1 0.3
KRC671E
IO=10mA, II=0.5mA
- 0.1 0.3
KRC672E
IO=5mA, II=0.25mA
- 0.1 0.3
Input Voltage (ON)
KRC666E
V
I(ON)
VO=0.3V, IO=20mA
- 0.98 3
V
KRC667E
VO=0.3V, IO=20mA
- 1.83 3
KRC668E
VO=0.3V, IO=20mA
- 1.22 3
KRC669E
VO=0.3V, IO=20mA
- 1.76 2.5
KRC670E
VO=0.3V, IO=2mA
- 2 3
KRC671E
VO=0.3V, IO=2mA
- 3.9 5
KRC672E
VO=0.3V, IO=1mA
- 1.64 3
Input Voltage (OFF)
KRC666E
V
I(OFF)
VCC=5V, IO=100μA
0.3 0.63 -
V
KRC667E 0.5 1.15 KRC668E 0.3 0.67 KRC669E 0.3 0.82 KRC670E 0.8 1.68 KRC671E 1 3.09 KRC672E 0.5 1.17 -
Transition Frequency KRC666E~672E
fT* VO=10V, IO=5mA
- 250 - MHz
Input Current
KRC666E
I
I
VI=5V
- - 7.2
mA
KRC667E - - 3.8
KRC668E - - 3.8
KRC669E - - 1.8
KRC670E - - 0.88
KRC671E - - 0.16
KRC672E - - 0.15
Note : * Characteristic of Transistor Only.
Input Resistor
KRC666U
R1 -
0.7 1 1.3
kΩ
KRC667U 1.54 2.2 2.86
KRC668U 1.54 2.2 2.86
KRC669U 3.29 4.7 6.11
KRC670U 7 10 13
KRC671U 32.9 47 61.1
KRC672U 70 100 130
Resistor Ratio
KRC666U
R2/R1 -
8 10 12
KRC667U 0.8 1.0 1.2
KRC668U 3.6 4.5 5.5
KRC669U 1.7 2.1 2.6
KRC670U 0.37 0.47 0.57
KRC671U 0.17 0.21 0.26
KRC672U 0.8 1.0 1.2

2008. 11. 20 3/6
KRC666E~KRC672E
Revision No : 4
IO - V
KRC666E
100
50
(mA)
30
O
10
5
3
1
OUTPUT CURRENT I
0.5
0.3
0.1 0.3 1 3
Ta=100 C
INPUT ON VOLTAGE V
IO - V
KRC666E
3k
(µA)
O
1k
I(ON)
Ta=25 C
Ta=-25 C
I(OFF)
I(ON)
V =0.2V
O
(V)
IO - V
I(ON)
KRC667E
100
50
30
(mA)
O
10
5
3
1
0.5
0.3
Ta=100 C
OUTPUT CURRENT I
10
0.1
0.1
0.3
13
INPUT ON VOLTAGE V
IO - V
KRC667E
3k
(µA)
O
1k
I(OFF)
Ta=25 C
Ta=-25 C
I(ON)
V =0.2V
O
(V)
10
500
300
100
50
OUTPUT CURRENT I
30
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
INPUT OFF VOLTAGE V
KRC666E
200
I
100
50
30
Ta=100 C
DC CURRENT GAIN G
10
13
Ta=25 C
Ta=100 C
Ta=-25 C
GI - I
O
Ta=25 C
Ta=-25 C
10 30 100
I(OFF)
V =5V
O
(V)
V =5V
O
500
300
a=100 C
100
50
OUTPUT CURRENT I
30
T
0.5 2.01.5 2.5
INPUT OFF VOLTAGE V
KRC667E
300
I
100
50
30
10
DC CURRENT GAIN G
5
3
Ta=100 C
31
Ta=25 C
Ta=-25 C
I(OFF)
GI - I
O
Ta=25 C
Ta=-25 C
10 30 100
V =5V
O
(V)
V =5V
O
3.01.00
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (mA)