Page 1
2002. 7. 10 1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC660U~KRC664U
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
MARK SPEC
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
100 mA
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
PC *
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=50V, IE=0
- - 100 nA
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 100 nA
DC Current Gain
h
FE
VCE=5V, IC=1mA
120 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=10mA, IB=0.5mA
- 0.1 0.3 V
Transition Frequency
fT * VCE=10V, IC=5mA
- 250 - MHz
Input Resistor
KRC660U
R
1
- 4.7 -
k
KRC661U - 10 KRC662U - 100 KRC663U - 22 KRC664U - 47 -
TYPE KRC660U KRC661U KRC662U KRC663U KRC664U
MARK NK NM NN NO NP
ELECTRICAL CHARACTERISTICS (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
* Total Rating.
Note : * Characteristic of Transistor Only.
R1
B
C
E
54
Q1
1
Q2
23
B
B1
1
C
2
A
A1
C
3
H
G
1. Q IN (BASE)
1
2. Q , Q COMMON (EMITTER)
112
3. Q IN (BASE)
2
4. Q OUT (COLLECTOR)
2
5. Q OUT (COLLECTOR)
5
D
4
T
DIM MILLIMETERS
A
B
B1
C
D
G
H
T
_
+
2.00 0.20
_
1.3 0.1A1
+
_
+
2.1 0.1
_
1.25 0.1
+
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 0.1
+
0.15+0.1/-0.05
USV
Type Name
54
123
Page 2
2002. 7. 10 2/4
KRC660U~KRC664U
Revision No : 4
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Switching
Time
Rise Time
KRC660U
t
r
VO=5V
V
IN
=5V
RL=1k
- 0.025 -
S
KRC661U - 0.03 KRC662U - 0.3 KRC663U - 0.06 KRC664U - 0.11 -
Storage Time
KRC660U
t
stg
- 3.0 KRC661U - 2.0 KRC662U - 6.0 KRC663U - 4.0 KRC664U - 5.0 -
Fall Time
KRC660U
t
f
- 0.2 KRC661U - 0.12 KRC662U - 2.0 KRC663U - 0.9 KRC664U - 1.4 -
Page 3
2002. 7. 10 3/4
KRC660U~KRC664U
Revision No : 4
KRC660U
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3 1 3
COLLECTOR CURRENT I (mA)
KRC661U
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3
h - I
FE C
Ta=100 C
Ta=25 C
Ta=-25 C
h - I
FE
Ta=100 C
Ta=25 C
Ta=-25 C
V =5V
CE
10 30 100
C
C
V =5V
CE
1031
V - I
CE(sat) C
KRC660U
2
I /I =20
C
1
B
0.5
0.3
CE(sat)
0.1
0.1
KRC661U
2
Ta=100 C
Ta=25 C
Ta=-25 C
0.3
COLLECTOR CURRENT I (mA)
V - I
CE(sat)
I /I =20
C
B
1031
C
C
10030
0.05
0.03
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATIN
0.01
1
0.5
0.3
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATIN
0.01
10030
Ta=100 C
Ta=25 C
Ta=-25 C
0.30.1
1310
30 100
COLLECTOR CURRENT I (mA)
KRC662U
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3
COLLECTOR CURRENT I (mA)
h - I
Ta=100 C
Ta=-25 C
1
Ta=25 C
C
CFE
V =5V
CE
10
3 10030
C
COLLECTOR CURRENT I (mA)
V - I
CE(sat)
KRC662U
2
I /I =20
BC
1
0.5
0.3
CE(sat)
0.1
0.1
Ta=100 C
Ta=-25 C
0.3
Ta=25 C
1
0.05
0.03
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATIN
0.01
COLLECTOR CURRENT I (mA)
C
C
3 10 10030
C
Page 4
2002. 7. 10 4/4
KRC660U~KRC664U
Revision No : 4
KRC663U
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3
COLLECTOR CURRENT I (mA)
KRC664U
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3
h - I
Ta=100 C
Ta=-25 C
1
h - I
Ta=100 C
Ta=-25 C
1
FE
Ta=25 C
Ta=25 C
C
V =5V
CE
10
3 10030
C
CFE
V =5V
CE
10
310030
V - I
CE(sat) C
KRC663U
2
I /I =20
BC
1
0.5
0.3
CE(sat)
0.1
0.05
Ta=100 C
0.03
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATIN
0.01
0.1 1
Ta=25 C
Ta=-25 C
0.3
COLLECTOR CURRENT I (mA)
V - I
CE(sat) C
KRC664U
2
I /I =20
BC
1
0.5
0.3
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATIN
0.01
Ta=100 C
Ta=25 C
Ta=-25 C
0.3
0.1 1
310 10030
C
310 10030
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
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