Page 1
2008. 11. 20 1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC657E~KRC659E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
·High Packing Density.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25℃)
BIAS RESISTOR VALUES
MARK SPEC
EQUIVALENT CIRCUIT (TOP VIEW)
TYPE NO.
R1(kΩ) R2(kΩ)
KRC657E 10 47
KRC658E 22 47
KRC659E 47 22
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
KRC657E～659E
V
O
50 V
Input Voltage
KRC657E
V
I
30, -6
VKRC658E 40, -7
KRC659E 40,-15
Output Current
KRC657E～659E
I
O
100 mA
Power Dissipation
PD *
200 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
TYPE KRC657E KRC658E KRC659E
MARK NH NI NJ
* Total Rating.
Marking
OUT
R1
IN
R2
COMMON
B
B1
1
C
A
A1
2
C
3
P
H
1. Q IN (BASE)
1
2. Q , Q COMMON (EMITTER)
112
3. Q IN (BASE)
2
4. Q OUT (COLLECTOR)
2
5. Q OUT (COLLECTOR)
5
DIM MILLIMETERS
A
A1
B
B1
D
4
P
C
D
H
P5
J
_
1.6 0.05
+
_
+
1.0 0.05
_
+
1.6 0.05
_
+
1.2 0.05
0.50
_
+
0.2 0.05
_
+
0.5 0.05
_
J
+
0.12 0.05
TESV
54
Q1
1
Q2
23
45
Lot No.
Type Name
123
Page 2
2008. 11. 20 2/4
KRC657E~KRC659E
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : * Characteristic of Transistor Only.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current
KRC657E～659E
I
O(OFF)
VO=50V, VI=0
- - 500 nA
DC Current Gain
KRC657E
G
I
VO=5V, IO=10mA
80 150 KRC658E 80 150 KRC659E 70 140 -
Output Voltage
KRC657E～659E
V
O(ON)
IO=10mA, II=0.5mA
- 0.1 0.3 V
Input Voltage (ON)
KRC657E
V
I(ON)
VO=0.2V, IO=5mA
- 1.2 1.8
VKRC658E - 1.8 2.6
KRC659E - 3.0 5.8
Input Votlage (OFF)
KRC657E
V
I(OFF)
VO=5V, IO=0.1mA
0.5 0.75 VKRC658E 0.6 0.88 -
KRC659E 1.5 1.82 -
Transition Frequency
KRC657E～659E
fT * VO=10V, IO=5mA
- 200 - MHz
Input Current
KRC657E
I
I
VI=5V
- - 0.88
mAKRC658E - - 0.36
KRC659E - - 0.16
Switching
Time
Rise
Time
KRC657E
t
r
VO=5V, VIN=5V
RL=1kΩ
- 0.05 -
μS
KRC658E - 0.12 KRC659E - 0.26 -
Storage
Time
KRC657E
t
stg
- 2.0 -
KRC658E - 2.4 KRC659E - 1.5 -
Fall
Time
KRC657E
t
f
- 0.36 -
KRC658E - 0.4 KRC659E - 0.41 -
Input Resistor
KRC657E
R1
-
7 10 13
kΩ
KRC658E 15.4 22 28.6
KRC659E 32.9 47 61.1
Resistor Ratio
KRC657E
R2/R1
-
3.7 4.7 5.7
KRC658E 1.7 2.1 26
KRC659E 0.37 0.47 0.57
Page 3
2008. 11. 20 3/4
KRC657E~KRC659E
Revision No : 3
KRC657E
50
V =0.2V
30
O
(mA)
O
10
5
3
Ta=100 C
1
0.5
OUTPUT CURRENT I
0.3
0.1 0.3 1 3
INPUT ON VOLTAGE V
KRC658E
50
V =0.2V
30
O
(mA)OUTPUT CURRENT I
O
10
5
3
1
0.5
OUTPUT CURRENT I
0.3
IO - V
Ta=25 C
Ta=-25 C
IO - V
Ta=100 C
I(ON)
-25
I(ON)
Ta=25 C
Ta=-25 C
310.30.1
25
100
10 30 100
(V)
I(ON)
1003010
KRC657E
3k
(µA)
O
1k
500
300
100
50
OUTPUT CURRENT I
30
0
INPUT OFF VOLTAGE V
KRC658E
3k
(µA)
O
1k
500
300
100
50
OUTPUT CURRENT I
30
0
IO - V
Ta=25 C
Ta=100 C
IO - V
=100 C
a
T
I(OFF)
Ta=-25 C
I(OFF)
Ta=25 C
I(OFF)
Ta=-25 C
V =5V
O
(V)
V =5V
O
1.61.41.21.00.80.60.40.2
1.61.41.21.00.80.60.40.2
(mA)
O
0.5
0.3
50
30
10
5
3
1
INPUT ON VOLTAGE V
IO - V
KRC659E
V =0.2V
O
C
Ta=100
INPUT ON VOLTAGE V
I(ON)
310.30.1
Ta=25 C
Ta=-25 C
I(ON)
I(ON)
(V)
(V)
INPUT OFF VOLTAGE V
IO - V
I(OFF)
KRC659E
3k
(µA)
O
1k
500
300
100
50
OUTPUT CURRENT I
1003010
30
C
a=100
T
Ta=25 C
INPUT OFF VOLTAGE V
I(OFF)
Ta=-25 C
I(OFF)
(V)
V =5V
O
3.02.62.21.81.41.00.60.2
(V)
3.4
Page 4
2008. 11. 20 4/4
KRC657E~KRC659E
Revision No : 3
GI - I
KRC657E KRC658E
1k
V =5V
I
500
300
100
DC CURRENT GAIN G
O
50
30
131030
OUTPUT CURRENT IO (mA)
GI - I
KRC659E
1k
V =5V
I
500
300
O
O
Ta=100 C
Ta=-25 C
O
Ta=100 C
Ta=25 C
100
1k
V =5V
I
500
300
100
O
50
DC CURRENT GAIN G
20
13
OUTPUT CURRENT I
GI - I
10
O
Ta=100 C
Ta=25 C
Ta=-25 C
O
30 100
(mA)
100
50
DC CURRENT GAIN G
20
OUTPUT CURRENT I
Ta=25 C
Ta=-25 C
O
100301031
(mA)
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