Page 1
2008. 11. 20 1/6
SEMICONDUCTOR
TECHNICAL DATA
KRC651E~KRC656E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
·High Packing Density.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25℃)
BIAS RESISTOR VALUES
MARK SPEC
123
54
Type Name
Lot N
TYPE NO.
R1(kΩ) R2(kΩ)
KRC651E 4.7 4.7
KRC652E 10 10
KRC653E 22 22
KRC654E 47 47
KRC655E 2.2 47
KRC656E
4.7 47
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
KRC651E～656E
V
O
50 V
Input Voltage
KRC651E
V
I
20, -10
V
KRC652E 30, -10
KRC653E 40, -10
KRC654E 40, -10
KRC655E 12, -5
KRC656E 20, -5
Output Current
KRC651E～656E
I
O
100 mA
Power Dissipation
PD*
200 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Operating Junction Temperature Range
T
j(opr)
-55～150
℃
TYPE KRC651E KRC652E KRC653E KRC654E KRC655E KRC656E
MARK NA NB NC ND NE NF
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Rating.
Marking
OUT
R1
IN
R2
COMMON
54
B
B1
1
C
A
A1
2
C
3
P
H
1. Q IN (BASE)
1
2. Q , Q COMMON (EMITTER)
112
3. Q IN (BASE)
2
4. Q OUT (COLLECTOR)
2
5. Q OUT (COLLECTOR)
5
DIM MILLIMETERS
A
A1
B
B1
D
4
P
C
D
H
P5
J
_
1.6 0.05
+
_
+
1.0 0.05
_
+
1.6 0.05
_
+
1.2 0.05
0.50
_
+
0.2 0.05
_
+
0.5 0.05
_
J
+
0.12 0.05
TESV
Q1
1
Q2
23
Page 2
2008. 11. 20 2/6
KRC651E~KRC656E
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : * Characteristic of Transistor Only.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current
KRC651E～656E
I
O(OFF)
VO=50V, VI=0
- - 500 nA
DC Current Gain
KRC651E
G
I
VO=5V, IO=10mA
30 55 KRC652E 50 80 KRC653E 70 120 KRC654E 80 200 KRC655E
80 200 KRC656E
80 200 -
Output Voltage
KRC651E～656E
V
O(ON)
IO=10mA, II=0.5mA
- 0.1 0.3 V
Input Voltage (ON)
KRC651E
V
I(ON)
VO=0.2V, IO=5mA
- 1.5 2.0
V
KRC652E - 1.8 2.4
KRC653E - 2.1 3.0
KRC654E - 2.8 5.0
KRC655E - 0.8 1.1
KRC656E - 0.9 1.3
Input Votlage (OFF)
KRC651E～654E
V
I(OFF)
VO=5V, IO=0.1mA
1.0 1.2 V
KRC655E～656E
0.5 0.65 -
Transition Frequency
KRC651E～656E
fT * VO=10V, IO=5mA
- 200 - MHz
Input Current
KRC651E
I
I
VI=5V
- - 1.8
mA
KRC652E - - 0.88
KRC653E - - 0.36
KRC654E - - 0.18
KRC655E - - 3.6
KRC656E - - 1.8
Input Resistor
KRC651E
R1 -
3.29 4.7 6.11
kΩ
KRC652E 7 10 13
KRC653E 15.4 22 28.6
KRC654E 32.9 47 61.1
KRC655E 1.54 2.2 2.86
KRC656E 3.29 4.7 6.11
Resistor Ratio
KRC651E～654E
R2/R1 -
0.8 1.0 1.2
KRC655E 17 21 26
KRC656E 8 10 12
Page 3
2008. 11. 20 3/6
KRC651E~KRC656E
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Switching
Time
Rise Time
KRC651E
t
r
VO=5V
V
IN
=5V
RL=1kΩ
- 0.03 -
μS
KRC652E - 0.05 KRC653E - 0.12 KRC654E - 0.22 KRC655E
- 0.01 -
KRC656E
- 0.03 -
Storage Time
KRC651E
t
stg
- 2.0 KRC652E - 2.0 KRC653E - 2.0 KRC654E - 2.0 KRC655E - 2.0 KRC656E - 2.0 -
Fall Time
KRC651E
t
f
- 0.12 KRC652E - 0.36 KRC653E - 0.35 KRC654E - 0.6 KRC655E - 0.1 KRC656E - 0.19 -
Page 4
2008. 11. 20 4/6
KRC651E~KRC656E
Revision No : 2
IO - V
KRC651E
100
V =0.2V
O
50
(mA)
30
O
10
5
3
Ta=100 C
1
0.5
OUTPUT CURRENT I
0.3
0.1 100
0.3 1 3 10 30
INPUT ON VOLTAGE V
IO - V
KRC653E
100
V =0.2V
O
50
30
(mA)
O
I(ON)
100
Ta=25 C
Ta=-25 C
I(ON)
I
I(ON)
25
-25
(V)
KRC652E
100
V =0.2V
O
50
(mA)
30
O
10
5
3
1
0.5
OUTPUT CURRENT I
0.3
INPUT ON VOLTAGE V
KRC654E
100
V =0.2V
O
50
30
(mA)
O
IO - V
Ta=100 C
- V
O
I(ON)
Ta=25 C
Ta=-25 C
I(ON)
I(ON)
3010310.3
(V)
1000.1
10
5
3
1
0.5
OUTPUT CURRENT I
0.3
INPUT ON VOLTAGE V
KRC655E
100
V =0.2V
O
50
(mA)
30
O
10
5
3
1
OUTPUT CURRENT I
0.5
0.3
0.1 100
Ta=100 C
0.3 1 3 10 30
Ta=100 C
IO - V
Ta=25 C
Ta=-25 C
Ta=25 C
Ta=-25 C
I(ON)
I(ON)
3010310.3
(V)
10
5
3
1
0.5
OUTPUT CURRENT I
0.3
0.1 100
1000.1
0.3 1 3 10 30
Ta=100 C
INPUT ON VOLTAGE V
IO - V
KRC656E
100
V =0.2V
O
50
30
(mA)
O
10
5
3
1
0.5
OUTPUT CURRENT I
0.3
Ta=100 C
Ta=25 C
Ta=-25 C
Ta=25 C
Ta=-25 C
I(ON)
I(ON)
(V)
3010310.3
1000.1
INPUT ON VOLTAGE V
I(ON)
(V)
INPUT ON VOLTAGE V
I(ON)
(V)
Page 5
2008. 11. 20 5/6
KRC651E~KRC656E
Revision No : 2
KRC651E
10k
5k
(µA)
3k
O
1k
500
300
100
OUTPUT CURRENT I
50
30
0.6
Ta=100 C
0.8 1.0 1.2 1.4 1.6 1.8 2.0
INPUT OFF VOLTAGE V
KRC653E
10k
5k
(µA)
3k
O
IO - V
Ta=25 C
IO - V
I(OFF)
Ta=-25 C
I(OFF)
IO - V
I(OFF)
KRC652E
V =5V
O O
(V)
I(OFF)
V =5V
O
10k
5k
(µA)
3k
O
1k
500
300
100
OUTPUT CURRENT I
50
30
0.6
Ta=100 C
INPUT OFF VOLTAGE V
KRC654E
10k
5k
(µA)
3k
O
Ta=25 C
IO - V
I(OFF)
Ta=-25 C
I(OFF)
V =5V
(V)
V =5V
O
2.01.81.61.41.21.00.8
1k
500
300
100
OUTPUT CURRENT I
50
30
0.6
Ta=100 C
INPUT OFF VOLTAGE V
KRC655E
10k
5k
(µA)
3k
O
1k
500
300
100
OUTPUT CURRENT I
50
30
0
Ta=25 C
IO - V
Ta=25 C
Ta=100 C
Ta=-25
I(OFF)
Ta=-25 C
1k
C
2.01.81.61.41.21.00.8
(V) INPUT OFF VOLTAGE V
I(OFF)
V =5V
O
1.41.21.00.80.60.40.2
500
300
100
OUTPUT CURRENT I
50
30
10k
5k
(µA)
3k
O
1k
500
300
100
OUTPUT CURRENT I
50
30
Ta=100 C
0.8 1.0 1.2 1.4 1.6 1.8 2.0
KRC656E
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
a=25 C
T
IO - V
a=100 C
T
I(OFF)
Ta=25 C
Ta
Ta=-25 C
C
=-25
I(OFF)
(V)
V =5V
O
INPUT OFF VOLTAGE V
I(OFF)
(V)
INPUT OFF VOLTAGE V
I(OFF)
(V)
Page 6
2008. 11. 20 6/6
KRC651E~KRC656E
Revision No : 2
KRC651E KRC652E
300
V =5V
I
DC CURRENT GAIN G
O
100
50
30
10
5
0.5 1 3 10
OUTPUT CURRENT IO (mA)
KRC653E KRC654E
300
I
100
50
30
GI - I
GI - I
Ta=100 C
O
O
Ta=-25 C
Ta=100 C
Ta=25 C
Ta=-25 C
30 100
Ta=25 C
300
V =5V
I
DC CURRENT GAIN G
O
100
50
30
10
5
OUTPUT CURRENT I
300
I
100
50
30
Ta=100 C
GI - I
GI - I
O
10310.5
O
Ta=-25 C
Ta=100 C
Ta=25 C
Ta=-25 C
(mA)
O
Ta=25 C
10030
DC CURRENT GAIN G
10
5
OUTPUT CURRENT IO (mA)
KRC655E KRC656E
300
I
100
50
30
DC CURRENT GAIN G
10
5
Ta=100 C
OUTPUT CURRENT I
GI - I
10310.5
O
Ta=25 C
Ta=-25 C
10310.5
(mA)
O
V =5V
O
V =5V
O
10
DC CURRENT GAIN G
10030
5
0.5 1 3 10
OUTPUT CURRENT I
GI - I
O
300
I
100
50
30
DC CURRENT GAIN G
10
10030
5
0.5 1 3 10
Ta=100 C
Ta=25 C
Ta=-25 C
OUTPUT CURRENT I
V =5V
O
30 100
(mA)
O
V =5V
O
30 100
(mA)
O
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