Page 1
2008. 11. 20 1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC410E~KRC414E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·With Built-in Bias Resistors.
·
Simplify Circuit Design.
·
Reduce a Quantity of Parts and Manufacturing Process.
·
High Packing Density.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25℃)
MARK SPEC
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
100 mA
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
P
C
100 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=50V, IE=0
- - 100 nA
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 100 nA
DC Current Gain
h
FE
VCE=5V, IC=1mA
120 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=10mA, IB=0.5mA
- 0.1 0.3 V
Transition Frequency
fT * VCE=10V, IC=5mA
- 250 - MHz
Input Resistor
KRC410E
R
1
3.29 4.7 6.11
kΩ
KRC411E 7 10 13
KRC412E 70 100 130
KRC413E 15.4 22 28.6
KRC414E 32.9 47 61.1
TYPE KRC410E KRC411E KRC412E KRC413E KRC414E
MARK NK NM NN NO NP
ELECTRICAL CHARACTERISTICS (Ta=25℃)
C
B
R1
E
E
2
G
A
H
1
C
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
B
D
3
J
DIM
A
B
C
D
E
G
H
J
MILLIMETERS
_
+
1.60 0.10
_
+
0.85 0.10
_
+
0.70 0.10
0.27+0.10/-0.05
_
+
1.60 0.10
_
+
1.00 0.10
0.50
_
+
0.13 0.05
ESM
Marking
Type Name
Page 2
2008. 11. 20 2/4
KRC410E~KRC414E
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Switching
Time
Rise Time
KRC410E
t
r
VO=5V
V
IN
=5V
R
L
=1kΩ
- 0.025 -
μS
KRC411E - 0.03 -
KRC412E - 0.3 -
KRC413E - 0.06 -
KRC414E - 0.11 -
Storage Time
KRC410E
t
stg
- 3.0 -
KRC411E - 2.0 -
KRC412E - 6.0 -
KRC413E - 4.0 -
KRC414E - 5.0 -
Fall Time
KRC410E
t
f
- 0.2 -
KRC411E - 0.12 -
KRC412E - 2.0 -
KRC413E - 0.9 -
KRC414E - 1.4 -
Page 3
2008. 11. 20 3/4
KRC410E~KRC414E
Revision No : 2
KRC410E
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3 1 3
COLLECTOR CURRENT I (mA)
KRC411E
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3
h - I
FE C
Ta=100 C
Ta=25 C
Ta=-25 C
h - I
FE
Ta=100 C
Ta=25 C
Ta=-25 C
V =5V
CE
10 30 100
C
C
V =5V
CE
1031
V - I
CE(sat) C
KRC410E
2
I /I =20
C
1
B
0.5
0.3
CE(sat)
0.1
0.1
KRC411E
2
Ta=100 C
Ta=25 C
Ta=-25 C
0.3
COLLECTOR CURRENT I (mA)
V - I
CE(sat)
I /I =20
C
B
1031
C
C
10030
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
1
0.5
0.3
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
10030
Ta=100 C
Ta=-25 C
0.30.1
Ta=25 C
1310
30 100
COLLECTOR CURRENT I (mA)
KRC412E
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3
COLLECTOR CURRENT I (mA)
h - I
Ta=100 C
Ta=-25 C
1
Ta=25 C
C
CFE
V =5V
CE
10
3 10030
C
COLLECTOR CURRENT I (mA)
V - I
CE(sat)
KRC412E
2
I /I =20
BC
1
0.5
0.3
CE(sat)
0.1
0.1
Ta=100 C
Ta=-25 C
0.3
Ta=25 C
1
3 10 10030
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
C
C
C
Page 4
2008. 11. 20 4/4
KRC410E~KRC414E
Revision No : 2
KRC413E
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3
COLLECTOR CURRENT I (mA)
KRC414E
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3
h - I
Ta=100 C
Ta=-25 C
1
h - I
Ta=100 C
Ta=-25 C
1
FE
Ta=25 C
Ta=25 C
C
V =5V
CE
10
3 10030
C
CFE
V =5V
CE
10
310030
V - I
CE(sat) C
KRC413E
2
I /I =20
BC
1
0.5
0.3
CE(sat)
0.1
0.05
Ta=100 C
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.1 1
Ta=25 C
Ta=-25 C
0.3
310 10030
COLLECTOR CURRENT I (mA)
V - I
CE(sat) C
KRC414E
2
I /I =20
BC
1
0.5
0.3
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
Ta=100 C
Ta=25 C
Ta=-25 C
0.3
0.1 1
310 10030
C
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
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