
2001. 7. 24 1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC407V~KRC409V
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·With Built-in Bias Resistors
·Simplify Circuit Design
·Reduce a Quantity of Parts and Manufacturing Process
·High Packing Density.
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
MAXIMUM RATING (Ta=25℃)
MARK SPEC
TYPE NO.
R1(kΩ) R2(kΩ)
KRC407V 10 47
KRC408V 22 47
KRC409V 47 22
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
KRC407V~409V
V
O
50 V
Input Voltage
KRC407V
V
I
30, -6
VKRC408V 40, -7
KRC409V 40,-15
Output Current
KRC407V~409V
I
O
100 mA
Power Dissipation
P
D
100 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55~150
℃
TYPE KRC407V KRC408V KRC409V
MARK NH NI NJ
R1
IN
R2
COMMON
OUT
E
B
G
A
H
K
C
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
2
1
P
P
D
3
J
DIM MILLIMETERS
A
B
C
D
E
G
H
K 0.2 0.05
P
_
1.2 0.05
+
_
0.8 0.05
+
_
0.5 0.05
+
_
0.3 0.05
+
_
1.2 0.05
+
_
0.8 0.05
+
0.40
_
0.12 0.05
J
+
_
+
5
VSM
Marking
Type Name

2001. 7. 24 2/4
KRC407V~KRC409V
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : * Characteristic of Transistor Only.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current
KRC407V~409V
I
O(OFF)
VO=50V, VI=0
- - 500 nA
DC Current Gain
KRC407V
G
I
VO=5V, IO=10mA
80 150 -
KRC408V 80 150 -
KRC409V 70 140 -
Output Voltage
KRC407V~409V
V
O(ON)
IO=10mA, II=0.5mA
- 0.1 0.3 V
Input Voltage (ON)
KRC407V
V
I(ON)
VO=0.2V, IO=5mA
- 1.2 1.8
VKRC408V - 1.8 2.6
KRC409V - 3.0 5.8
Input Votlage (OFF)
KRC407V
V
I(OFF)
VO=5V, IO=0.1mA
0.5 0.75 -
VKRC408V 0.6 0.88 -
KRC409V 1.5 1.82 -
Transition Frequency
KRC407V~409V
fT * VO=10V, IO=5mA
- 200 - MHz
Input Current
KRC407V
I
I
VI=5V
- - 0.88
mAKRC408V - - 0.36
KRC409V - - 0.16
Switching
Time
Rise
Time
KRC407V
t
r
VO=5V, VIN=5V
R
L
=1kΩ
- 0.05 -
μS
KRC408V - 0.12 -
KRC409V - 0.26 -
Storage
Time
KRC407V
t
stg
- 2.0 -
KRC408V - 2.4 -
KRC409V - 1.5 -
Fall
Time
KRC407V
t
f
- 0.36 -
KRC408V - 0.4 -
KRC409V - 0.41 -