Page 1
2008. 10. 29 1/2
SEMICONDUCTOR
TECHNICAL DATA
KRC281S~KRC286S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES
·High emitter-base voltage : V
EBO
=25V(Min)
·High reverse h
FE
: reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
·Low on resistance : R
on
=1Ω(Typ.) (I
B
=5mA)
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
25 V
Collector Current
I
C
300 mA
Collector Power Dissipation
P
C
150 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
MAXIMUM RATING (Ta=25℃)
EQUIVALENT CIRCUIT
MARK SPEC
TYPE
hFEclassification
B
KRC281S MQB
KRC282S MRB
KRC283S MSB
KRC284S MTB
KRC285S MUB
KRC286S MVB
R1
B
C
E
E
B
LL
DIM MILLIMETERS
A
B
C
D
3
M
D
E
G 1.90
H
J
K
L
M
N
P7
J
Q 0.1 MAX
H
N
C
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
A
G
Q
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
Type Name
Lot No.
Page 2
2008. 10. 29 2/2
KRC281S~KRC286S
Revision No : 2
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage
BV
CEO
IC=1mA
20 - - V
Collector-Base Breakdown Voltage
BV
CBO
I
C
=50μA
50 - - V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=50μA
25 - - V
Collector Cut-off Current
I
CBO
VCB=50V, IE=0
- - 0.1
μA
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=30mA, IB=3mA
- - 0.1 V
DC Current Gain
h
FE
VCE=2V, IC=4mA
350 - 1200
Input Resistor
KRC281S
R
1
1.54 2.2 2.86
k
Ω
KRC282S 3.29 4.7 6.11
KRC283S 3.92 5.6 7.28
KRC284S 4.76 6.8 8.84
KRC285S 7 10 13
KRC286S 15.4 22 28.6
Transition Frequency
f
T *
VCE=6V, IC=4mA,
- 30 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 4.8 - pF
ELECTRICAL CHARACTERISTICS (Ta=25℃)
* Characteristic of Transistor Only.
Note) h
FE
Classification B:350～1200
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