Page 1
2011. 6. 29 1/3
SEMICONDUCTOR
TECHNICAL DATA
KRC231S~KRC235S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 6
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
INTERFACE CIRCUIT AND DRIVER
CIRCUIT APPLICATION.
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
30 V
Collector-Emitter Voltage
V
CEO
15 V
Emitter-Base Voltage
V
EBO
5V
Collector Current
I
C
600 mA
Collector Power Dissipation
P
C
200 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
TYPE KRC231S KRC232S KRC233S KRC234S KRC235S
MARK NW NY NZ NNA NNB
MARK SPEC
C
R1
B
E
E
B
LL
DIM MILLIMETERS
A
B
C
D
3
M
D
E
G 1.90
H
J
K
L
M
N
P7
J
Q 0.1 MAX
H
N
C
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
A
G
Q
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
Type Name
Lot No.
Lot No.
Type Name
Page 2
2011. 6. 29 2/3
KRC231S~KRC235S
Revision No : 6
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : * Characteristic of Transistor Only.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage
BV
CEO
IC=1mA
15 - - V
Collector-Base Breakdown Voltage
BV
CBO
I
C
=50μA
30 - - V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=50μA
5.0 - - V
Collector Cut-off Current
I
CBO
VCB=30V
- - 0.5
μA
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=50mA, IB=2.5mA
-4080mV
DC Current Gain
h
FE
VCE=5V, IC=50mA
200 350 800 -
Input Resistor
KRC231S
R
1
1.54 2.2 2.86
kΩ
KRC232S 3.92 5.6 7.28
KRC233S 7 10 13
KRC234S 3.29 4.7 6.11
KRC235S 4.76 6.8 8.84
Transition Frequency
fT*
VCE=10V, IE=-50mA,
f=100MHz
- 200 - MHz
On Resistance Ron
f=1kHz, IB=1mA, VIN=0.3V
- 0.6 -
Ω
Page 3
2011. 6. 29 3/3
KRC231S~KRC235S
Revision No : 6
2k
k
1k
FE
300
100
30
10
DC CURRENT GAIN h
COMMON EMITTER
V =5V
CE
3
Ta=25 C
1
0.1
0.3 1 3 10 30 100 300 1k
COLLECTOR CURRENT I (mA)
FE C
CE(sat)
VOLTAGE V (mV)
COLLECTOR-EMITTER SATURATION
C
500
COMMON EMITTER
300
V =5V
CE
Ta=25 C
100
50
30
10
5
3
1
V - Ih - I
CE(sat) C
I /I =20
B
C
COLLECTOR CURRENT I (mA)
I /I =10
B
C
301031
100 300 1
C
R - I
1k
I =1mA
300
100
on
30
B
R
=
ON
V
AVB
Bon
1k
װ
f=1kHz
~
V=0.3V
V
VVV
B
A
B
()
װ
ź1000
V
10
3
1
ON RESISTANCE R (Ω)
0.3
0.1
0.01
BASE CURRENT I (mA)
B
1003010310.30.10.03
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