Page 1
2008. 10. 29 1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC110S~KRC114S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
ELECTRICAL CHARACTERISTICS (Ta=25℃)
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5V
Collector Current
I
C
100 mA
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
P
C
200 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=50V, IE=0
- - 100 nA
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 100 nA
DC Current Gain
h
FE
VCE=5V, IC=1mA
120 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=10mA, IB=0.5mA
- 0.1 0.3 V
Transition Frequency
fT *VCE=10V, IC=5mA
- 250 - MHz
Input Resistor
KRC110S
R
1
3.29 4.7 6.11
k
Ω
KRC111S 7 10 13
KRC112S 70 100 130
KRC113S 15.4 22 28.6
KRC114S 32.9 47 61.1
TYPE KRC110S KRC111S KRC112S KRC113S KRC114S
MARK NK NM NN NO NP
MARK SPEC
Note : * Characteristic of Transistor Only.
R1
B
C
E
E
B
LL
DIM MILLIMETERS
A
B
C
D
3
M
D
E
G 1.90
H
J
K
L
M
N
P7
J
Q 0.1 MAX
H
N
C
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
A
G
Q
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
Lot No.
Type Name
Page 2
2008. 10. 29 2/4
KRC110S~KRC114S
Revision No : 3
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Switching
Time
Rise
Time
KRC110S
t
r
VO=5V
V
IN
=5V
R
L
=1kΩ
- 0.025 -
μS
KRC111S - 0.03 -
KRC112S - 0.3 -
KRC113S - 0.06 -
KRC114S - 0.11 -
Storage
Time
KRC110S
t
stg
- 3.0 -
KRC111S - 2.0 -
KRC112S - 6.0 -
KRC113S - 4.0 -
KRC114S - 5.0 -
Fall
Time
KRC110S
t
f
- 0.2 -
KRC111S - 0.12 -
KRC112S - 2.0 -
KRC113S - 0.9 -
KRC114S - 1.4 -
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Page 3
2008. 10. 29 3/4
KRC110S~KRC114S
Revision No : 3
KRC110S
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3 1 3
COLLECTOR CURRENT I (mA)
KRC111S
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3
h - I
FE C
Ta=100 C
Ta=25 C
Ta=-25 C
h - I
FE C
Ta=100 C
Ta=25 C
Ta=-25 C
V =5V
CE
10 30 100
C
V =5V
CE
1031
10030
V - I
CE(sat)
KRC110S
2
I /I =20
B
C
1
0.5
0.3
CE(sat)
0.1
0.1
Ta=100 C
Ta=-25 C
0.3
Ta=25 C
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
V - I
CE(sat)
KRC111S
2
I /I =20
C
B
1
0.5
0.3
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
Ta=100 C
Ta=-25 C
0.30.1
Ta=25 C
1310
C
1031
C
C
10030
30 100
COLLECTOR CURRENT I (mA)
KRC112S
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
0.3
0.1
COLLECTOR CURRENT I (mA)
h - I
Ta=100 C
Ta=-25 C
1
Ta=25 C
C
CFE
V =5V
CE
10
3 10030
C
COLLECTOR CURRENT I (mA)
V - I
CE(sat)
KRC112S
2
I /I =20
BC
1
0.5
0.3
CE(sat)
0.1
0.1
Ta=100 C
Ta=25 C
Ta=-25 C
0.3
1
3 10 10030
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
C
C
C
Page 4
2008. 10. 29 4/4
KRC110S~KRC114S
Revision No : 3
KRC113S
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3
COLLECTOR CURRENT I (mA)
KRC114S
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3
h - I
FE
Ta=100 C
Ta=-25 C
1
h - I
Ta=100 C
Ta=-25 C
1
Ta=25 C
Ta=25 C
C
V =5V
CE
10
3 10030
C
CFE
V =5V
CE
10
310030
V - I
CE(sat)
KRC113S
2
I /I =20
BC
1
0.5
0.3
CE(sat)
0.1
0.05
VOLTAGE V (V)
0.03
0.01
COLLECTOR-EMITTER SATURATION
Ta=100 C
Ta=25 C
Ta=-25 C
0.1 1
0.3
310 10030
COLLECTOR CURRENT I (mA)
V - I
CE(sat)
KRC114S
2
I /I =20
BC
1
0.5
0.3
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
Ta=100 C
Ta=-25 C
Ta=25 C
0.01
COLLECTOR-EMITTER SATURATION
0.1 1
0.3
310 10030
C
C
C
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
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