
2008. 11. 20 1/6
SEMICONDUCTOR
TECHNICAL DATA
KRA316E~KRA322E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25℃)
MARK SPEC
TYPE NO.
R1(kΩ) R2(kΩ)
KRA316E 1 10
KRA317E 2.2 2.2
KRA318E 2.2 10
KRA319E 4.7 10
KRA320E 10 4.7
KRA321E 47 10
KRA322E 100 100
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
KRA316E~322E
V
O
-50 V
Input Voltage
KRA316E
V
I
-10, 5
V
KRA317E -12, 10
KRA318E -12, 5
KRA319E -20, 7
KRA320E -30, 10
KRA321E -40, 15
KRA322E -40, 10
Output Current
KRA316E~322E
I
O
-100 mA
Power Dissipation
P
D
100 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55~150
℃
TYPE KRA316E KRA317E KRA318E KRA319E KRA320E KRA321E KRA322E
MARK P2 P4 P5 P6 P7 P8 P9
R1
IN
OUT
R2
COMMON(+)
E
G
A
C
2
H
1
1. EMITTER
2. BASE
3. COLLECTOR
B
D
3
J
DIM
A
B
C
D
E
G
H
J
MILLIMETERS
_
+
1.60 0.10
_
+
0.85 0.10
_
+
0.70 0.10
0.27+0.10/-0.05
_
+
1.60 0.10
_
+
1.00 0.10
0.50
_
+
0.13 0.05
ESM
Marking
Type Name

2008. 11. 20 2/6
KRA316E~KRA322E
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current
KRA316E~322E
I
O(OFF)
VO=-50V, VI=0
- - -500 nA
DC Current Gain
KRA316E
G
I
VO=-5V, IO=-5mA
33 - -
KRA317E
VO=-5V, IO=-20mA
20 - -
KRA318E
VO=-5V, IO=-10mA
33 - -
KRA319E
VO=-5V, IO=-10mA
30 - -
KRA320E
VO=-5V, IO=-10mA
24 - -
KRA321E
VO=-5V, IO=-5mA
33 - -
KRA322E
VO=-5V, IO=-5mA
62 - -
Output Voltage
KRA316E
V
O(ON)
IO=-10mA, II=-0.5mA
- - -0.3
V
KRA317E
IO=-10mA, II=-0.5mA
- -0.1 -0.3
KRA318E
IO=-10mA, II=-0.5mA
- - -0.3
KRA319E
IO=-10mA, II=-0.5mA
- -0.1 -0.3
KRA320E
IO=-10mA, II=-0.5mA
- -0.1 -0.3
KRA321E
IO=-10mA, II=-0.5mA
- -0.1 -0.3
KRA322E
IO=-5mA, II=-0.25mA
- -0.1 -0.3
Input Voltage (ON)
KRA316E
V
I(ON)
VO=-0.3V, IO=-20mA
- -0.98 -3
V
KRA317E
VO=-0.3V, IO=-20mA
- -1.83 -3
KRA318E
VO=-0.3V, IO=-20mA
- -1.22 -3
KRA319E
VO=-0.3V, IO=-20mA
- -1.76 -2.5
KRA320E
VO=-0.3V, IO=-2mA
- -2 -3
KRA321E
VO=-0.3V, IO=-2mA
- -3.9 -5
KRA322E
VO=-0.3V, IO=-1mA
- -1.64 -3
Input Voltage (OFF)
KRA316E
V
I(OFF)
VCC=-5V, IO=-100μA
-0.3 -0.63 -
V
KRA317E -0.5 -1.15 KRA318E -0.3 -0.67 KRA319E -0.3 -0.82 KRA320E -0.8 -1.68 KRA321E -1 -3.09 KRA322E -0.5 -1.17 -
Transition Frequency
KRA316E~322E
fT* VO=-10V, IO=-5mA
- 250 - MHz
Input Current
KRA316E
I
I
VI=-5V
- - -7.2
mA
KRA317E - - -3.8
KRA318E - - -3.8
KRA319E - - -1.8
KRA320E - - -0.88
KRA321E - - -0.16
KRA322E - - -0.15
Note : * Characteristic of Transistor Only.
Input Resistor
KRA316E
R1 -
0.7 1 1.3
kΩ
KRA317E 1.54 2.2 2.86
KRA318E 1.54 2.2 2.86
KRA319E 3.29 4.7 6.11
KRA320E 7 10 13
KRA321E 32.9 47 61.1
KRA322E 70 100 130
Resistor Ratio
KRA316E
R2/R1 -
8 10 12
KRA317E 0.8 1.0 1.2
KRA318E 3.6 4.5 5.5
KRA319E 1.7 2.1 2.6
KRA320E 0.37 0.47 0.57
KRA321E 0.17 0.21 0.26
KRA322E 0.8 1.0 1.2

2008. 11. 20 3/6
KRA316E~KRA322E
Revision No : 2
KRA316E
-100
-50
-30
O
-10
-5
-3
Ta=100 C
-1
OUTPUT CURRENT I (mA)
-0.5
-0.3
-0.1 -0.3 -1 -3
INPUT ON VOLTAGE V (V)
KRA316E
-3k
I - V
O
I - V
O
I(ON)
Ta=25 C
Ta=-25 C
I(OFF)
I(ON)
V =-0.2V
O
-10
KRA317E
-100
-50
-30
O
-10
-5
-3
-1
Ta=100 C
-0.5
-0.3
OUTPUT CURRENT I (mA)
-0.1
-0.1
-0.3
INPUT ON VOLTAGE V (V)
KRA317E
-3k
I - V
O
-1
I - V
O
I(ON)
I(OFF)
Ta=25 C
Ta=-25 C
-3
I(ON)
V =-0.2V
O
-10
OUTPUT CURRENT I (µA)
OUTPUT CURRENT I (µA)
-1k
O
-500
-300
a=25 C
T
-100
Ta=100 C
-50
-30
-0.5 -2.0-1.5 -2.5
INPUT OFF VOLTAGE V (V)
KRA317E
100
I
50
Ta=-25 C
G - I
I
V =-5V
O
-3.0-1.00
I(OFF)
O
30
Ta=100 C
10
Ta=25 C
Ta=-25 C
-1k
O
-500
-300
Ta=100 C
Ta=25 C
G - I
I
Ta=100 C
Ta=-25 C
O
Ta=25 C
Ta=-25 C
I(OFF)
V =-5V
O
-100
-50
-30
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
INPUT OFF VOLTAGE V (V)
KRA316E
200
I
100
50
30
DC CURRENT GAIN G
V =-5V
10
-1 -3
OUTPUT CURRENT I (mA)
-10 -30 -100
O
O
DC CURRENT GAIN G
5
V =-5V
2
-3-1
-10 -30 -100
OUTPUT CURRENT I (mA)
O
O