Page 1
2008. 11. 20 1/4
SEMICONDUCTOR
TECHNICAL DATA
KRA310E~KRA314E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
·High Packing Density.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25℃)
MARK SPEC
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-100 mA
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
P
C
100 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -100 nA
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -100 nA
DC Current Gain
h
FE
VCE=-5V, IC=-1mA
120 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-10mA, IB=-0.5mA
- -0.1 -0.3 V
Transition Frequency
fT *V
CE
=-10V, IC=-5mA
- 250 - MHz
Input Resistor
KRA310E
R
1
3.29 4.7 6.11
kΩ
KRA311E 7 10 13
KRA312E 70 100 130
KRA313E 15.4 22 28.6
KRA314E 32.9 47 61.1
TYPE KRA310E KRA311E KRA312E KRA313E KRA314E
MARK PK PM PN PO PP
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : * Characteristic of Transistor Only.
R1
B
C
E
E
2
G
A
H
1
C
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
B
D
3
J
DIM
A
B
C
D
E
G
H
J
MILLIMETERS
_
+
1.60 0.10
_
+
0.85 0.10
_
+
0.70 0.10
0.27+0.10/-0.05
_
+
1.60 0.10
_
+
1.00 0.10
0.50
_
+
0.13 0.05
ESM
Marking
Type Name
Page 2
2008. 11. 20 2/4
KRA310E~KRA314E
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Switching
Time
Rise Time
KRA310E
t
r
VO=-5V
V
IN
=-5V
R
L
=1kΩ
- 0.2 -
μS
KRA311E - 0.065 -
KRA312E - 0.4 -
KRA313E - 0.1 -
KRA314E - 0.15 -
Storage Time
KRA310E
t
stg
- 2.0 -
KRA311E - 1.7 -
KRA312E - 3.0 -
KRA313E - 2.0 -
KRA314E - 1.5 -
Fall Time
KRA310E
t
f
- 0.3 -
KRA311E - 0.3 -
KRA312E - 1.7 -
KRA313E - 0.8 -
KRA314E - 1.5 -
Page 3
2008. 11. 20 3/4
KRA310E~314E
Revision No : 2
KRA310E
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
-0.3 -1 -3
-0.1
COLLECTOR CURRENT I (mA)
KRA311E
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
-0.3-0.1
h - I
FE C
Ta=100 C
Ta=25 C
Ta=-25 C
h - I
FE C
Ta=100 C
Ta=25 C
Ta=-25 C
V =-5V
CE
-10 -30 -100
C
V =-5V
CE
-10-3-1
-100-30
V - I
KRA310E
-2
-1
I /I =20
C
B
CE(sat)
-0.5
-0.3
CE(sat)
-0.1
-0.1
Ta=100 C
Ta=-25 C
-0.3
Ta=25 C
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
V - I
KRA311E
-2
-1
I /I =20
C
B
CE(sat)
-0.5
-0.3
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
Ta=100 C
Ta=-25 C
-0.3-0.1
Ta=25 C
-1 -3 -10
C
-10-3-1
C
C
-100-30
-30 -100
COLLECTOR CURRENT I (mA)
KRA312E
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
-0.1
-0.3
COLLECTOR CURRENT I (mA)
h - I
Ta=100 C
Ta=-25 C
-1
C
FE C
Ta=25 C
-10
-3 -100-30
C
V =-5V
CE
COLLECTOR CURRENT I (mA)
V - I
KRA312E
-2
I /I =20
BC
CE(sat)
-1
-0.5
-0.3
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
Ta=100 C
Ta=25 C
Ta=-25 C
-0.1 -1
-0.3
-3 -10 -100-30
COLLECTOR CURRENT I (mA)
C
C
C
Page 4
2008. 11. 20 4/4
KRA310E~314E
Revision No : 2
KRA313E
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
-0.1
-0.3
COLLECTOR CURRENT I (mA)
KRA314E
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
-0.3
-0.1
h - I
Ta=100 C
Ta=-25 C
-1
h - I
Ta=100 C
Ta=-25 C
-1
CFE
Ta=25 C
V =-5V
CE
-10
-3 -100-30
C
CFE
Ta=25 C
V =-5V
CE
-10
-3 -100-30
V - I
KRA313E
-2
-1
I /I =20
BC
CE(sat) C
-0.5
-0.3
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
Ta=100 C
Ta=25 C
Ta=-25 C
-0.3
-0.1 -1
-3 -10 -100-30
COLLECTOR CURRENT I (mA)
V - I
KRA314E
-2
I /I =20
BC
CE(sat) C
-1
-0.5
-0.3
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
Ta=100 C
Ta=25 C
Ta=-25 C
-0.3
-0.1 -1
-3 -10 -100-30
C
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
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