Page 1
1998. 7. 8 1/4
SEMICONDUCTOR
TECHNICAL DATA
KRA110M~KRA114M
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-100 mA
Collector Power Dissipation
P
C
400 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
C
R1
B
E
B
A
DIM
MILLIMETERS
F
H
C
J
1
L
EE
2
M
3
N
1. EMITTER
2. COLLECTOR
3. BASE
G
D
K
O
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
D
2.40 0.15
E
F
G
14.00 0.50
H
0.60 MAX
J
K
L
M
N
0.55 MAX
O0.75
1.27
2.30
1.05
1.45
25
0.80
_
+
_
+
TO-92M
Page 2
1998. 7. 8 2/4
KRA110M~KRA114M
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : * Characteristic of Transistor Only.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -100 nA
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -100 nA
DC Current Gain
h
FE
VCE=-5V, IC=-1mA
120 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-10mA, IB=-0.5mA
- -0.1 -0.3 V
Transition Frequency
fT * VCE=-10V, IC=-5mA
- 250 - MHz
Input Resistor
KRA110M
R
1
- 4.7 -
k
KRA111M - 10 -
KRA112M - 100 -
KRA113M - 22 -
KRA114M - 47 -
Switching
Time
Rise
Time
KRA110M
t
r
VO=-5V
V
IN
=-5V
R
L
=1k
- 0.2 -
S
KRA111M - 0.065 -
KRA112M - 0.4 -
KRA113M - 0.1 -
KRA114M - 0.15 -
Storage
Time
KRA110M
t
stg
- 2.0 -
KRA111M - 1.7 -
KRA112M - 3.0 -
KRA113M - 2.0 -
KRA114M - 1.5 -
Fall
Time
KRA110M
t
f
- 0.3 -
KRA111M - 0.3 -
KRA112M - 1.7 -
KRA113M - 0.8 -
KRA114M - 1.5 -
Page 3
1998. 7. 8 3/4
KRA110M~KRA114M
Revision No : 3
KRA110M
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
-0.3 -1 -3
-0.1
COLLECTOR CURRENT I (mA)
KRA111M
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
-0.3-0.1
h - I
FE C
Ta=100 C
Ta=25 C
Ta=-25 C
h - I
FE C
Ta=100 C
Ta=25 C
Ta=-25 C
V =-5V
CE
-10 -30 -100
C
V =-5V
CE
-10-3-1
-100-30
V - I
KRA110M
-2
-1
I /I =20
C
B
CE(sat)
-0.5
-0.3
CE(sat)
-0.1
-0.1
Ta=100 C
Ta=-25 C
-0.3
Ta=25 C
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
V - I
KRA111M
-2
-1
I /I =20
C
B
CE(sat)
-0.5
-0.3
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
Ta=100 C
Ta=-25 C
-0.3-0.1
Ta=25 C
-1 -3 -10
C
-10-3-1
C
C
-100-30
-30 -100
COLLECTOR CURRENT I (mA)
KRA112M
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
-0.1
-0.3
COLLECTOR CURRENT I (mA)
h - I
Ta=100 C
Ta=-25 C
-1
C
FE C
Ta=25 C
-10
-3 -100-30
C
V =-5V
CE
COLLECTOR CURRENT I (mA)
V - I
KRA112M
-2
I /I =20
BC
CE(sat)
-1
-0.5
-0.3
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
Ta=100 C
Ta=25 C
Ta=-25 C
-0.1 -1
-0.3
-3 -10 -100-30
COLLECTOR CURRENT I (mA)
C
C
C
Page 4
1998. 7. 8 4/4
KRA110M~KRA114M
Revision No : 3
KRA113M
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
-0.1
-0.3
COLLECTOR CURRENT I (mA)
KRA114M
2k
1k
FE
500
300
100
50
30
DC CURRENT GAIN h
10
-0.3
-0.1
h - I
Ta=100 C
Ta=-25 C
-1
h - I
Ta=100 C
Ta=-25 C
-1
CFE
Ta=25 C
V =-5V
CE
-10
-3 -100-30
C
CFE
Ta=25 C
V =-5V
CE
-10
-3 -100-30
V - I
KRA113M
-2
-1
I /I =20
BC
CE(sat) C
-0.5
-0.3
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
Ta=100 C
Ta=25 C
Ta=-25 C
-0.3
-0.1 -1
-3 -10 -100-30
COLLECTOR CURRENT I (mA)
V - I
KRA114M
-2
I /I =20
BC
CE(sat) C
-1
-0.5
-0.3
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
Ta=100 C
Ta=25 C
Ta=-25 C
-0.3
-0.1 -1
-3 -10 -100-30
C
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
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