Page 1
2008. 10. 29 1/6
SEMICONDUCTOR
TECHNICAL DATA
KRA101S~KRA106S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 4
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
MAXIMUM RATING (Ta=25℃)
TYPE NO.
R1(kΩ) R2(kΩ)
KRA101S 4.7 4.7
KRA102S 10 10
KRA103S 22 22
KRA104S 47 47
KRA105S 2.2 47
KRA106S 4.7 47
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
KRA101S～106S
V
O
-50 V
Input Voltage
KRA101S
V
I
-20, 10
V
KRA102S -30, 10
KRA103S -40, 10
KRA104S -40, 10
KRA105S -12, 5
KRA106S -20, 5
Output Current
KRA101S～106S
I
O
-100 mA
Power Dissipation
P
D
200 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
BIAS RESISTOR VALUES
EQUIVALENT CIRCUIT
(+)
TYPE KRA101S KRA102S KRA103S KRA104S KRA105S KRA106S
MARK PA PB PC PD PE PF
MARK SPEC
OUT
R1(4.7 k
IN
R2
COMMON
E
B
LL
DIM MILLIMETERS
A
B
C
A
G
Q
2
H
1
PP
N
C
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
K
D
3
M
D
E
G 1.90
H
J
K
L
M
N
P7
J
Q 0.1 MAX
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
Lot No.
Type Name
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2008. 10. 29 2/6
KRA101S~KRA106S
Revision No : 4
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current
KRA101S～106S
I
O(OFF)
VO=-50V, VI=0
- - -500 nA
DC Current Gain
KRA101S
G
I
VO=-5V, IO=-10mA
30 55 -
KRA102S 50 80 -
KRA103S 70 120 -
KRA104S 80 200 -
KRA105S
80 200 -
KRA106S
80 200 -
Output Voltage
KRA101S～106S
V
O(ON)
IO=-10mA, II=-0.5mA
- -0.1 -0.3 V
Input Voltage (ON)
KRA101S
V
I(ON)
VO=-0.2V, IO=-5mA
- -1.5 -2.0
V
KRA102S - -1.8 -2.4
KRA103S - -2.1 -3.0
KRA104S - -2.8 -5.0
KRA105S - -0.8 -1.1
KRA106S - -0.9 -1.3
Input Votlage (OFF)
KRA101S～104S
V
I(OFF)
VO=-5V, IO=-0.1mA
-1.0 -1.2 V
KRA105S～106S
-0.5 -0.65 -
Transition Frequency
KRA101S～106S
fT * VO=-10V, IO=-5mA
- 200 - MHz
Input Current
KRA101S
I
I
VI=-5V
- - -1.8
mA
KRA102S - - -0.88
KRA103S - - -0.36
KRA104S - - -0.18
KRA105S - - -3.6
KRA106S - - -1.8
Input Resistor
KRA101S
R1 -
3.29 4.7 6.11
kΩ
KRA102S 7 10 13
KRA103S 15.4 22 28.6
KRA104S 32.9 47 61.1
KRA105S 1.54 2.2 2.86
KRA106S 3.29 4.7 6.11
Resistor Ratio
KRA101S~104S
R2/R1 -
0.8 1.0 1.2
KRA105S 17 21 26
KRA106S 8 10 12
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : *Characteristic of Transistor Only
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KRA101S~KRA106S
Revision No : 4
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Switching
Time
Rise
Time
KRA101S
t
r
VO=-5V
V
IN
=-5V
R
L
=1kΩ
- 0.07 -
μS
KRA102S - 0.06 -
KRA103S - 0.2 -
KRA104S - 0.24 -
KRA105S
- 0.02 -
KRA106S
- 0.07 -
Storage
Time
KRA101S
t
stg
- 1.1 -
KRA102S - 1.1 -
KRA103S - 1.1 -
KRA104S - 1.1 -
KRA105S - 1.1 -
KRA106S - 1.1 -
Fall
Time
KRA101S
t
f
- 0.15 -
KRA102S - 0.24 -
KRA103S - 0.38 -
KRA104S - 0.63 -
KRA105S - 0.1 -
KRA106S - 0.2 -
ELECTRICAL CHARACTERISTICS (Ta=25℃)
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KRA101S~KRA106S
Revision No : 4
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2008. 10. 29 5/6
KRA101S~KRA106S
Revision No : 4
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2008. 10. 29 6/6
KRA101S~KRA106S
Revision No : 4
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