
2008. 11. 20 1/6
SEMICONDUCTOR
TECHNICAL DATA
KRA101M~KRA106M
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 5
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
MAXIMUM RATING (Ta=25℃)
TYPE NO.
R1(k
Ω) R2(kΩ)
KRA101M 4.7 4.7
KRA102M 10 10
KRA103M 22 22
KRA104M 47 47
KRA105M 2.2 47
KRA106M 4.7 47
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage
KRA101M~106M
V
O
-50 V
Input Voltage
KRA101M
V
I
-20, 10
V
KRA102M -30, 10
KRA103M -40, 10
KRA104M -40, 10
KRA105M -12, 5
KRA106M -20, 5
Output Current
KRA101M
~106M
I
O
-100 mA
Power Dissipation
P
D
400 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55~150
℃
BIAS RESISTOR VALUES
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
B
A
DIM
MILLIMETERS
F
H
C
J
1
L
EE
2
M
3
N
1. EMITTER
2. COLLECTOR
3. BASE
G
D
K
O
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
D
2.40 0.15
E
F
G
14.00 0.50
H
0.60 MAX
J
K
L
M
N
0.55 MAX
O0.75
1.27
2.30
1.05
1.45
25
0.80
_
+
_
+
TO-92M

Input Resistor
KRA101M
R1 -
3.29 4.7 6.11
k
Ω
KRA102M 7 10 13
KRA103M 15.4 22 28.6
KRA104M 32.9 47 61.1
KRA105M 1.54 2.2 2.86
KRA106M 3.29 4.7 6.11
Resistor Ratio
KRA101M~104M
R2/R1 -
0.8 1.0 1.2
KRA105M 17 21 26
KRA106M 8 10 12
2008. 11. 20 2/6
KRA101M~KRA106M
Revision No : 5
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current
KRA101M
~106M
I
O(OFF)
VO=-50V, VI=0
- - -500 nA
DC Current Gain
KRA101M
G
I
VO=-5V, IO=-10mA
30 55 -
KRA102M 50 80 -
KRA103M 70 120 -
KRA104M 80 200 -
KRA105M
80 200 -
KRA106M
80 200 -
Output Voltage
KRA101M
~106M
V
O(ON)
IO=-10mA, II=-0.5mA
- -0.1 -0.3 V
Input Voltage (ON)
KRA101M
V
I(ON)
VO=-0.2V, IO=-5mA
- -1.5 -2.0
V
KRA102M - -1.8 -2.4
KRA103M - -2.1 -3.0
KRA104M - -2.8 -5.0
KRA105M - -0.8 -1.1
KRA106M - -0.9 -1.3
Input Votlage (OFF)
KRA101M
~104M
V
I(OFF)
VO=-5V, IO=-0.1mA
-1.0 -1.2 V
KRA105M
~106M
-0.5 -0.65 -
Transition Frequency
KRA101M
~106M
f
T
*V
O
=-10V, IO=-5mA
- 200 - MHz
Input Current
KRA101M
I
I
VI=-5V
- - -1.8
mA
KRA102M - - -0.88
KRA103M - - -0.36
KRA104M - - -0.18
KRA105M - - -3.6
KRA106M - - -1.8
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : *Characteristic of Transistor Only

2008. 11. 20 3/6
KRA101M~KRA106M
Revision No : 5
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Switching
Time
Rise
Time
KRA101M
t
r
VO=-5V
V
IN
=-5V
R
L
=1kΩ
- 0.07 -
μS
KRA102M - 0.06 -
KRA103M - 0.2 -
KRA104M - 0.24 -
KRA105M
- 0.02 -
KRA106M
- 0.07 -
Storage
Time
KRA101M
t
stg
- 1.1 -
KRA102M - 1.1 -
KRA103M - 1.1 -
KRA104M - 1.1 -
KRA105M - 1.1 -
KRA106M - 1.1 -
Fall
Time
KRA101M
t
f
- 0.15 -
KRA102M - 0.24 -
KRA103M - 0.38 -
KRA104M - 0.63 -
KRA105M - 0.1 -
KRA106M - 0.2 -
ELECTRICAL CHARACTERISTICS (Ta=25℃)

2008. 11. 20 5/6
KRA101M~KRA106M
Revision No : 5
OUTPUT CURRENT I (µA)
OUTPUT CURRENT I (µA)
KRA101M
-10k
-5k
V =-5V
O
-3k
O
-1k
-500
-300
Ta=100 C
-100
-50
-30
-0.6
-0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
INPUT OFF VOLTAGE V (V)
I - V
KRA103M
I - V
-10k
O
-500
-300
-100
-5k
-3k
-1k
-50
-30
V =-5V
O
-0.8
Ta=100 C
-1.0
Ta=25 C
I(OFF)
O
-10k
-5k
KRA102M
V =-5V
O
-3k
O
-1k
OUTPUT CURRENT I (µA)
-500
-300
-100
-50
25 C
=
a
T
Ta=-25 C
-30
-0.6
-0.8
I(OFF)
I(OFF)
O
-10k
-5k
INPUT OFF VOLTAGE V (V)
KRA104M
V =-5V
O
-3k
O
-1k
-500
-300
Ta=-25 C
OUTPUT CURRENT I (µA)
-100
-50
Ta=100 C
-30
-1.8-1.4-1.2 -1.6 -2.0
-0.8
-1.0
Ta=100 C
-1.0
I - V
O
Ta=25 C
I - V
O
25 C
Ta=
I(OFF)
I(OFF)
a=-25
T
a=-25 C
T
C
-1.8-1.4-1.2 -1.6 -2.0
I(OFF)
-1.8-1.4-1.2 -1.6 -2.0
OUTPUT CURRENT I (µA)
INPUT OFF VOLTAGE V (V)
I - V
O
-10k
-5k
KRA105M
V =-5V
O
-3k
O
-1k
-500
-300
Ta=100 C
a=25 C
T
-100
-50
-30
-0.2
-0.4
0
INPUT OFF VOLTAGE V (V)
I(OFF)
Ta=-25 C
I(OFF)
-10k
-5k
-3k
O
-1k
-500
-300
-100
OUTPUT CURRENT I (µA)
-50
-30
-1.2-0.8-0.6 -1.0 -1.4 -0.4
I(OFF
INPUT OFF VOLTAGE V (V)
I - V
Ta=100 C
O
Ta=25 C
KRA106M
V =-5V
O
0
-0.2
INPUT OFF VOLTAGE V (V)
I(OFF)
I(OFF)
Ta=-25 C
-1.2-0.8-0.6 -1.0 -1.4
I(OFF