Page 1
2002. 6. 25 1/3
SEMICONDUCTOR
TECHNICAL DATA
KN2907S/AS
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.
Low Saturation Voltage
: V
CE(sat)
=-0.4V(Max.) ; IC=150mA, IB=-15mA.
Complementary to the KN2222S/2222AS.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL
RATING
UNIT
KN2907S KN2907AS
Collector-Base Voltage
V
CBO
-60 V
Collector-Emitter Voltage
V
CEO
-40 -60 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-600 mA
Collector Power Dissipation
(Ta=25 )
P
C
150
mW
PC *
350
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
MARK SPEC
TYPE MARK
KN2907S ZDA
KN2907AS ZHA
E
B
LL
MILLIMETERS
DIM
A
B
C
D
3
M
D
E
G
H
J
K
L
M
N
P
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
A
G
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
Type Name
ZDA
Lot No.
Type Name
Lot No.
ZHA
Page 2
2002. 6. 25 2/3Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
KN2907S/AS
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CEX
VCE=-30V, VEB=-0.5V
- - -50 nA
Collector Cut-off
Current
KN2907S
I
CBO
VCB=-50V, IE=0
- - -20
nA
KN2907AS - - -10
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-10 A, IE=0
-60 - - V
Collector-Emitter *
Breakdown Voltage
KN2907S
V
(BR)CEO
IC=-10mA, IB=0
-40 - V
KN2907AS -60 - -
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=-10 A, IC=0
-5 - - V
DC Current
Gain
KN2907S
hFE(1) IC=-0.1mA, VCE=-10V
35 - -
KN2907AS 75 - -
KN2907S
hFE(2) IC=-1.0mA, VCE=-10V
50 - -
KN2907AS 100 - -
KN2907S
hFE(3) IC=-10mA, VCE=-10V
75 - -
KN2907AS 100 - -
KN2907S
hFE(4) * IC=-150mA, VCE=-10V
100 - 300
KN2907AS
KN2907S
hFE(5) * IC=-500mA, VCE=-10V
30 - -
KN2907AS 50 - -
Collector-Emitter Saturation Voltage *
V
CE(sat)
1 IC=-150mA, IB=-15mA
- - -0.4
V
V
CE(sat)
2 IC=-500mA, IB=-50mA
- - -1.6
Base-Emitter Saturation Voltage *
V
BE(sat)
1 IC=-150mA, IB=-15mA
- - -1.3
V
V
BE(sat)
2 IC=-500mA, IB=-50mA
- - -2.6
Transition Frequency
f
T
VCE=-20V, IC=-50mA,
f=100MHz
200 - - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- - 8 pF
Page 3
2002. 6. 25 3/3
KN2907S/AS
Revision No : 3
FE
1k
500
300
V =-10V
CE
FE C
C - Vh - I
ob CB
12
10
8
ob
I =0
E
f=1MHz
100
50
30
DC CURRENT GAIN h
10
-1 -3 -10 -30
COLLECTOR CURRENT I (mA)
-10
I /I =10
CB
-5
-3
-1
-0.5
CE(sat)
-0.3
-0.1
BE(sat)
-0.05
V ,V (V)
SATURATION VOLTAGE
-0.03
-100
V ,V - I
BE(sat) CE(sat) C
V
BE(sat)
V
CE(sat)
-300 -1k
C
6
4
CAPACITANCE C (pF)
2
0
COLLECTOR-BASE VOLTAGE V (V)
500
400
1
300
C
200
P (mW)
2
100
-30-10-3-1
Pc - Ta
1
MOUNTED ON 99.5%
AIUMINA 10x8x0.6mm
2
Ta=25 C
-100 -200
CB
-0.01
-3-1
COLLECTOR CURRENT I (mA)
-30-10
-100 -300 -1k
C
COLLECTOR POWER DISSIPATION
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
175
Loading...