Page 1
1999. 9. 30 1/3
SEMICONDUCTOR
TECHNICAL DATA
KN2222S/AS
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=10nA(Max.) ; VCE=60V, V
EB(OFF)
=3V.
Low Saturation Voltage
: V
CE(sat)
=0.3V(Max.) ; IC=150mA, IB=15mA.
Complementary to the KN2907S/2907AS.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL
RATING
UNIT
KN2222S KN2222AS
Collector-Base Voltage
V
CBO
60 75 V
Collector-Emitter Voltage
V
CEO
30 40 V
Emitter-Base Voltage
V
EBO
5 6 V
Collector Current
I
C
600 mA
Collector Power Dissipation
(Ta=25 )
P
C
150
mW
PC *
350
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
MARK SPEC
TYPE MARK
KN2222S ZBA
KN2222AS ZGA
E
B
LL
MILLIMETERS
DIM
A
B
C
D
3
M
D
E
G
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
A
G
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
Type Name
ZBA
Lot No.
Type Name
Lot No.
ZGA
Page 2
1999. 9. 30 2/3Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
KN2222S/AS
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current KN2222AS
I
CEX
VCE=60V, V
EB(OFF)
=3V
- - 10 nA
Collector Cut-off Current
KN2222S
I
CBO
VCB=50V, IE=0
- - 10
nA
KN2222AS
VCB=60V, IE=0
- - 10
Emitter Cut-off Current KN2222AS/S
I
EBO
VEB=3V, IC=0
- - 10 nA
Collector-Base
Breakdown Voltage
KN2222S
V
(BR)CBO
IC=10 A, IE=0
60 - -
V
KN2222AS 75 - -
Collector-Emitter *
Breakdown Voltage
KN2222S
V
(BR)CEOIE
=10mA, IB=0
30 - -
V
KN2222AS 40 - -
Emitter-Base
Breakdown Voltage
KN2222S
V
(BR)EBO
IE=10 A, IC=0
5 - -
V
KN2222AS 6 - -
DC Current Gain *
KN2222S
KN2222AS
hFE(1) IC=0.1mA, VCE=10V
35 - -
hFE(2) IC=1mA, VCE=10V
50 - -
hFE(3) VCE=10mA, VCE=10V
75 - -
hFE(4) IC=150mA, VCE=10V
100 - 300
KN2222S
hFE(5) IC=150mA, VCE=10V
30 - -
KN2222AS 40 - -
Collector-Emitter *
Saturation Voltage
KN2222S
V
CE(sat)
1 IC=150mA, IB=15mA
- - 0.4
V
KN2222AS - - 0.3
KN2222S
V
CE(sat)
2 IC=500mA, IB=50mA
- - 1.6
KN2222AS - - 1.0
Base-Emitter *
Saturation Voltage
KN2222S
V
BE(sat)
1 IC=150mA, IB=15mA
- - 1.3
V
KN2222AS 0.6 - 1.2
KN2222S
V
BE(sat)
2 IC=500mA, IB=50mA
- - 2.6
KN2222AS - - 2.0
Transition Frequency
KN2222S
f
T
IC=20mA, VCE=20V,
f=100MHz
250 - -
MHz
KN2222AS 300 - -
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1.0MHz
- - 8 pF
Page 3
1999. 9. 30 3/3
KN2222S/AS
Revision No : 2
1k
V =10V
CE
FE
500
300
100
50
30
DC CURRENT GAIN h
10
1 3 10 30
COLLECTOR CURRENT I (mA)
10
I /I =10
C
B
5
3
1
0.5
CE(sat)
0.3
0.1
BE(sat)
0.05
V ,V (V)
SATURATION VOLTAGE
0.03
FE C
100
C
V , V - I
BE(sat) CE(sat) C
V
BE(sat)
V
CE(sat)
300 1k
12
I =0
E
f=1MHz
10
ob
8
6
4
CAPACITANCE C (pF)
2
0
COLLECTOR-BASE VOLTAGE V (V)
500
400
1
300
C
200
P (mW)
2
100
C - Vh - I
ob CB
301031
Pc - Ta
1
MOUNTED ON 99.5%
AIUMINA 10x8x0.6mm
2
Ta=25 C
100 200
CB
0.01
31
COLLECTOR CURRENT I (mA)
3010
100 300
C
COLLECTOR POWER DISSIPATION
0
1k
0 25 50 75 100 125 150
175
AMBIENT TEMPERATURE Ta ( C)
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