Page 1
1996. 1. 28 1/3
SEMICONDUCTOR
TECHNICAL DATA
KN2222/A
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=10nA(Max.) ; VCE=60V, V
EB(OFF)
=3V.
Low Saturation Voltage
: V
CE(sat)
=0.3V(Max.) ; IC=150mA, IB=15mA.
Complementary to the KN2907/2907A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL
RATING
UNIT
KN2222 KN2222A
Collector-Base Voltage
V
CBO
60 75 V
Collector-Emitter Voltage
V
CEO
30 40 V
Emitter-Base Voltage
V
EBO
5 6 V
Collector Current
I
C
600 mA
Collector Power Dissipation
(Ta=25 )
P
C
625 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
B
K
D
F
1 2
L
E
G
H
F
C
3
M
AJ
1. EMITTER
2. BASE
3. COLLECTOR
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
_
J
K
L
+
14.00 0.50
0.55 MAX
2.30
0.45 MAXM
1.00N
TO-92
Page 2
1996. 1. 28 2/3Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
KN2222/A
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current KN2222A
I
CEX
VCE=60V, V
EB(OFF)
=3V
- - 10 nA
Collector Cut-off Current
KN2222
I
CBO
VCB=50V, IE=0
- - 10
nA
KN2222A
VCB=60V, IE=0
- - 10
Emitter Cut-off Current KN2222A
I
EBO
VEB=3V, IC=0
- - 10 nA
Collector-Base
Breakdown Voltage
KN2222
V
(BR)CBO
IC=10 A, IE=0
60 - -
V
KN2222A
75 - -
Collector-Emitter *
Breakdown Voltage
KN2222
V
(BR)CEOIE
=10mA, IB=0
30 - -
V
KN2222A 40 - -
Emitter-Base
Breakdown Voltage
KN2222
V
(BR)EBO
IE=10 A, IC=0
5 - -
V
KN2222A 6 - -
DC Current Gain *
KN2222
KN2222A
hFE(1) IC=0.1mA, VCE=10V
35 - -
hFE(2) IC=1mA, VCE=10V
50 - -
hFE(3) IC=10mA, VCE=10V
75 - -
hFE(4) IC=150mA, VCE=10V
100 - 300
KN2222
hFE(5) IC=500mA, VCE=10V
30 - -
KN2222A 40 - -
Collector-Emitter *
Saturation Voltage
KN2222
V
CE(sat)
1 IC=150mA, IB=15mA
- - 0.4
V
KN2222A - - 0.3
KN2222
V
CE(sat)
2 IC=500mA, IB=50mA
- - 1.6
KN2222A - - 1.0
Base-Emitter *
Saturation Voltage
KN2222
V
BE(sat)
1 IC=150mA, IB=15mA
- - 1.3
V
KN2222A 0.6 - 1.2
KN2222
V
BE(sat)
2 IC=500mA, IB=50mA
- - 2.6
KN2222A - - 2.0
Transition Frequency
KN2222
f
T
IC=20mA, VCE=20V
f=100MHz
250 - -
MHz
KN2222A 300 - -
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1.0MHz
- - 8 pF
Page 3
1996. 1. 28 3/3
KN2222/A
Revision No : 0
1k
V =10V
CE
FE
500
300
100
50
30
DC CURRENT GAIN h
10
1 3 10 30
COLLECTOR CURRENT I (mA)
10
I /I =10
C
B
5
3
1
0.5
CE(sat)
0.3
0.1
BE(sat)
0.05
V ,V (V)
SATURATION VOLTAGE
0.03
0.01
31
COLLECTOR CURRENT I (mA)
FE C
100
V , V - I
BE(sat) CE(sat) C
V
BE(sat)
V
CE(sat)
3010
100 300
C
C
300 1k
C - Vh - I
ob CB
12
I =0
E
f=1MHz
10
ob
8
6
4
CAPACITANCE C (pF)
2
0
301031
COLLECTOR-BASE VOLTAGE V (V)
100 200
CB
Pc - Ta
700
600
500
400
300
C
P (mW)
200
100
COLLECTOR POWER DISSIPATION
0
0
1k
25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
Loading...