How it Works
Datasheet
Loading...
kml0d6np20ea
Datasheet
6 pgs60.51 Kb0

Datasheet kml0d6np20ea Datasheet

Download
Page 1
2008. 9. 10
1/6
SEMICONDUCTOR
TECHNICAL DATA
KML0D6NP20EA
N and P-Ch Trench MOSFET
Revision No : 3
It’s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter.
FEATURES
·N-Channel
: V
DSS
=20V, ID=600mA (R
DS(ON)
=0.70Ω @ VGS=4.5V).
: V
DSS
=20V, ID=500mA (R
DS(ON)
=0.85Ω @ VGS=2.5V).
: V
DSS
=20V, ID=350mA (R
DS(ON)
=1.25Ω @ VGS=1.8V).
·P-Channel
: V
DSS
=-20V, ID=-400mA (R
DS(ON)
=1.2Ω @ VGS=-4.5V).
: V
DSS
=-20V, ID=-300mA (R
DS(ON)
=1.6Ω @ VGS=-2.5V).
: V
DSS
=-20V, ID=-150mA (R
DS(ON)
=2.7Ω @ VGS=-1.8V).
MAXIMUM RATING (Ta=25℃)
Note 1) *Surface Mounted on FR4 Board, t≤5sec
CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT
Drain-Source Voltage
V
DSS
20 -20 V
Gate-Source Voltage
V
GSS
±6 ±6
V
Drain Current
DC @TA=25℃
ID*
515 -390
mA
DC @TA=85℃
370 -280
Pulsed
I
DP
650 -650
Source-Drain Diode Current
I
S
450 -450
Drain Power Dissipation
PD*
280 280 mW
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Resistance, Junction to Ambient
R
thJA
*
446
℃/W
DIM MILLIMETERS
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
6
4
P
P
P5
5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1. Source 1
2. Gate 1
3. Drain 2
4. Source 2
5. Gate 2
6. Drain 1
PIN CONNECTION (TOP VIEW)
1
S
1
G
2
1
D
3
2
6
D
1
G
5
2
S
4
2
Marking
1
2
3
Lot No.
Type Name
A1
6
5
4
Page 2
2008. 9. 10
2/6
KML0D6NP20EA
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
ID=250μA, VGS=0V
N-Ch 20 - -
V
ID=-250μA, VGS=0V
P-Ch -20 - -
Drain Cut-off Current
I
DSS
VGS=0V, VDS=16V
N-Ch - 0.3 100
nA
VGS=0V, VDS=-16V
P-Ch - -0.3 -100
Gate Leakage Current
I
GSS
VGS=±4.5V, VDS=0V
N-Ch -
±0.5 ±1.0
μA
P-Ch -
±1.0 ±2.0
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250μA
N-Ch 0.45 - 1.0
V
VDS=V
GS, ID
=-250μA
P-Ch -0.45 - -1.0
Drain-Source ON Resistance
R
DS(ON)
*
VGS=4.5V, ID=600mA
N-Ch - 0.41 0.70
Ω
VGS=-4.5V, ID=-350mA
P-Ch - 0.80 1.20
VGS=2.5V, ID=500mA
N-Ch - 0.53 0.85
VGS=-2.5V, ID=-300mA
P-Ch - 1.20 1.60
VGS=1.8V, ID=350mA
N-Ch - 0.70 1.25
VGS=-1.8V, ID=-150mA
P-Ch - 1.80 2.70
ON State Drain Current
I
D(ON)
*
VGS=4.5V, VDS=5V
N-Ch 700 - -
mA
VGS=-4.5V, VDS=-5V
P-Ch -700 - -
Forward Transconductance
gfs*
VDS=10V, ID=400mA
N-Ch - 1.0 -
S
VDS=-10V, ID=-250mA
P-Ch - 0.4 -
Source-Drain Diode Forward Voltage
VSD*
IS=150mA, VGS=0V
N-Ch - 0.8 1.2
V
IS=-150mA, VGS=0V
P-Ch - -0.8 -1.2
Dynamic
Total Gate Charge
Qg*
N-Ch
: VDS=10V, ID=250mA, VGS=4.5V
P-Ch
: VDS=-10V, ID=-250mA, VGS=-4.5V
N-Ch - 750 -
pC
P-Ch - 1500 -
Gate-Source Charge
Qgs*
N-Ch - 75 -
P-Ch - 150 -
Gate-Drain Charge
Qgd*
N-Ch - 225 -
P-Ch - 450 -
Turn-on Delay time
t
d(on)
*
N-Ch
: VDD=10V, ID=200mA,
V
GS
=4.5V, RG=10Ω
P-Ch
: VDD=-10V, VGS=-4.5V,
I
D
=-200mA, RG=10Ω
N-Ch - 5 -
ns
P-Ch - 5 -
Turn-off Delay time
t
d(off)
*
N-Ch - 25 -
P-Ch - 35 -
Note 2) *Pulse test : Pulse width≤300㎲, Duty Cycle≤2%.
Page 3
2008. 9. 10
3/6
KML0D6NP20EA
Revision No : 3
N-Channel
Fig 1. ID - V
DS
Fig 2. R
DS(on)
- I
D
1.0
0.8
(A)
D
0.6
0.4
Drain Current I
0.2
0.0
0.0
0.5
1.0
0.8
(A)
D
0.6
0.4
0.2
Drain Current I
VGS=2.5V
VGS=2.0V
VGS=5,4,3V
1.0 1.5 2.0 2.5 3.0
VGS=1.8V
VGS=1.0V
Drain - Source Voltage VDS (V)
Fig 3. ID - V
-55
GS
C
25
C
TC=125
4.0
(Ω)
DS(on)
3.2
2.4
1.6
On Resistance R
0.8
Source
0.0
Drain-
VGS=2.5V
0.4 0.600.2 1.00.8
VGS=1.8V
VGS=4.5V
Drain - Current ID (A)
(Ω)
1.6
DS(on)
C
1.4
1.2
VGS = 4.5V
= 350mA
I
D
Fig 4. R
DS(ON)
- T
j
On Resistance R
1.0
Source
0.8
0.0
Gate - Source Voltage VGS (V)
Fig 5. Vth - T
0.3
I
= 250µA
0.2
0.1
-0.0
-0.1
-0.2
-0.3
-50 -25
D
05010025 12575
Junction Temperature Tj ( )
(V)
th
Gate Threshold Voltage V
1.0 1.50.0 0.5 2.52.0
j
C
0.6
-50 -25 25 50 75 1251000
Normalized Drain-
1000
(mA)
DR
100
10
Junction Temperature Tj ( )
Tj=125
25
Reverse Drain Current I
1
0.4 1.40.8 1.0 1.20.2 0.60.0
Source - Drain Forward Voltage V
Fig 6. IDR - V
C
C
C
SDF
50
C
(V)
SDF
Page 4
2008. 9. 10
4/6
KML0D6NP20EA
Revision No : 3
Fig 7. V
5
V
= 10V
DS
= 250mA
I
(V)
GS
Gate - Source Voltage V
D
4
3
2
1
0
0.0
0.2
Total Gate - Charge
0
10
Duty=0.5
0.4
GS
- Qg
Qg (nC)
100
80
60
40
Capacitance C (pF)
20
0
0.6
0.8
Fig 9. Transient Thermal Response Curve
Fig 8. C - V
C
iss
C
oss
C
rss
DS
V
GS
f = 1MHz
Drain - Source Voltage VDS (V)
= 0V
208 1204 16
0.2
0.1
-1
10
0.05
0.02
-2
10
10
Normalized Effective Transient Thermal Resistance
SINGLE
-4
-3
10
-2
10
Square Wave Pulse Duration (sec)
P
DM
- Duty cycle D = t1/t
- Per Unit Base = R
-1
10
10
0
1
10
t
1
10
t
2
2
= 500 /W
thJA
2
C
3
10
Page 5
2008. 9. 10
5/6
KML0D6NP20EA
Revision No : 3
P-Channel
Fig 1. ID - V
DS
Fig 2. R
DS(on)
- I
D
1.0
VGS=5V
0.8
(A)
D
0.6
0.4
Drain Current I
0.2
0.0
0.0
0.5
1.0
0.8
(A)
D
0.6
0.4
0.2
Drain Current I
VGS=4V
1.0 1.5 2.0 2.5 3.0
VGS=3V
Drain - Source Voltage VDS (V)
Fig 3. ID - V
-55
GS
C
25
C
VGS=2.5V
VGS=2V
VGS=1.8V
TC=125
4.0
(Ω)
DS(on)
3.2
2.4
VGS=1.8V
1.6
On Resistance R
0.8
Source
0.0
Drain-
0.4 0.600.2 1.00.8
VGS=2.5V
VGS=4.5V
Drain - Current ID (A)
(Ω)
1.6
DS(on)
C
On Resistance R
1.4
1.2
1.0
VGS = 4.5V
= 350mA
I
D
Fig 4. R
DS(ON)
- T
j
Source
0.8
0.0
1.0 1.50.0 0.5 3.02.52.0
Gate - Source Voltage VGS (V)
Fig 5. Vth - T
0.3
I
= 250µA
0.2
0.1
-0.0
-0.1
-0.2
-0.3
-50 -25
D
05010025 12575
Junction Temperature Tj ( )
(V)
th
Gate Threshold Voltage V
0.6
-50 -25 25 50 75 1251000
Normalized Drain-
j
1000
(mA)
DR
100
10
Junction Temperature Tj ( )
Fig 6. IDR - V
Tj=125
C
25
C
SDF
-55
C
C
Reverse Drain Current I
1
C
Source - Drain Forward Voltage V
0.4 1.40.8 1.0 1.20.2 0.60.0
(V)
SDF
Page 6
2008. 9. 10
6/6
KML0D6NP20EA
Revision No : 3
Fig 7. V
5
V
= 10V
DS
= 250mA
I
(V)
GS
Gate - Source Voltage V
D
4
3
2
1
0
0.0
0.40.2
Total Gate - Charge
0.80.6
GS
- Q
Qg (nC)
g
120
100
80
Fig 8. C - V
C
iss
DS
V
= 0V
GS
f = 1MHz
60
40
Capacitance C (pF)
20
0
1.21.0
1.61.4
C
oss
C
rss
208 1204 16
Drain - Source Voltage VDS (V)
Fig 9. Transient Thermal Response Curve
0
10
Duty=0.5
0.2
0.1
-1
10
0.05
0.02
-2
10
10
Normalized Effective Transient Thermal Resistance
SINGLE
-4
-3
10
-2
10
Square Wave Pulse Duration (sec)
P
DM
- Duty cycle D = t1/t
- Per Unit Base = R
-1
10
0
10
1
10
t
1
thJA
10
t
2
2
= 500 /W
2
C
3
10
Loading...
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use