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SEMICONDUCTOR
TECHNICAL DATA
KML0D4N20V
N-Ch Trench MOSFET
Revision No : 0
General Description
It’s mainly suitable for Load Switching Cell Phones, Battery Powered
Systems and Level-Shifter.
FEATURES
·V
DSS
=20V, ID=0.4A
·
Drain-Soure ON Resistance
: R
DS(ON)
=0.70Ω @ V
GS
=4.5V
: R
DS(ON)
=0.85Ω @ V
GS
=2.5V
: R
DS(ON)
=1.25Ω @ V
GS
=1.8V
·
Super High Dense Cell Design
MAXIMUM RATING (Ta=25℃)
Note 1) *Surface Mounted on 1”×1” FR4 Board. t≤5 sec
CHARACTERISTIC SYMBOL N-Ch UNIT
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±6
V
Drain Current
DC @T
A
=25℃
ID*
400
mA
DC @T
A
=85℃
280
Pulsed
I
DP
650
Source-Drain Diode Current
I
S
125
Drain Power Dissipation
PD*
150 mW
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
E
B
D
3
J
DIM MILLIMETERS
A
B
C
D
E
G
H
K 0.2 0.05
P
1. Source
2. Gate
3. Drain
_
1.2 0.05
+
_
0.8 0.05
+
_
0.5 0.05
+
_
0.3 0.05
+
_
1.2 0.05
+
_
0.8 0.05
+
0.40
_
0.12 0.05
J
+
_
+
5
2
G
A
1
H
K
P
C
P
VSM
PIN CONNECTION (TOP VIEW)
D
3
3
Type Name
Marking
LA
2
G
1
S
2
1
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KML0D4N20V
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note 2) *Pulse test : Pulse width≤300㎲, Duty Cycle≤2%.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
20 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=16V
- 0.3 100 nA
Gate Leakage Current
I
GSS
V
GS
=±4.5V, V
DS
=0V
-
±0.5 ±1.0 μA
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=250μA
0.45 - 1.0 V
Drain-Source ON Resistance
R
DS(ON)
*
VGS=4.5V, ID=400mA
- 0.41 0.70
Ω
VGS=2.5V, ID=350mA
- 0.53 0.85
VGS=1.8V, ID=300mA
- 0.70 1.25
Forward Transconductance
gfs* VDS=10V, ID=400mA
- 1.0 - S
Source-Drain Diode Forward Voltage
VSD* IS=150mA, VGS=0V
- 0.8 1.2 V
Dynamic
Total Gate Charge
Qg*
VDS=10V, ID=250mA, VGS=4.5V
- 750 -
pCGate-Source Charge
Qgs*
- 75 -
Gate-Drain Charge
Qgd*
- 225 -
Turn-on Delay time
t
d(on)
*
VDD=10V, ID=200mA,
V
GS
=4.5V, R
G
=10Ω
- 5 ns
Turn-off Delay time
t
d(off)
*
- 25 -
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KML0D4N20V
Revision No : 0
1.0
0.8
(A)
D
0.6
0.4
Drain Current I
0.2
0.0
0.0
0.5
1.0
0.8
(A)
D
0.6
0.4
0.2
Drain Current I
Fig 1. ID - V
VGS=2.5V
VGS=2.0V
VGS=5,4,3V
1.0 1.5 2.0 2.5 3.0
DS
VGS=1.8V
Drain - Source Voltage VDS (V)
Fig 3. ID - V
-55
GS
C
25
C
TC=125
VGS=1.0V
4.0
(Ω)
DS(on)
3.2
2.4
1.6
On Resistance R
0.8
Source
0.0
Drain-
Fig 2. R
0.4 0.60 0.2 1.00.8
DS(on)
VGS=2.5V
- I
D
VGS=1.8V
VGS=4.5V
Drain - Current ID (A)
(Ω)
1.6
DS(on)
C
1.4
1.2
VGS = 4.5V
= 350mA
I
D
Fig 4. R
DS(ON)
- T
j
On Resistance R
1.0
Source
0.8
0.0
Gate - Source Voltage VGS (V)
Fig 5. Vth - T
0.3
0.2
0.1
-0.0
-0.1
-0.2
-0.3
-50 -25
ID = 250µA
05010025 12575
Junction Temperature Tj ( )
(V)
th
Gate Threshold Voltage V
1.0 1.50.0 0.5 2.52.0
j
C
0.6
-50 -25 25 50 75 1251000
Normalized Drain-
Junction Temperature Tj ( )
Fig 6. IDR - V
1000
(mA)
DR
100
10
Reverse Drain Current I
1
Tj=125
25
0.4 1.40.8 1.0 1.20.2 0.60.0
Source - Drain Forward Voltage V
C
SDF
C
C
-50
C
(V)
SDF
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KML0D4N20V
Revision No : 0
Fig 7. V
5
V
= 10V
DS
= 250mA
I
(V)
GS
Gate - Source Voltage V
D
4
3
2
1
0
0.0
0.2
Total Gate - Charge
0
10
Duty=0.5
GS
0.4
- Qg
Qg (nC)
100
80
60
40
Capacitance C (pF)
20
0
0.6
0.8
Fig 9. Transient Thermal Response Curve
Fig 8. C - V
C
iss
C
oss
C
rss
DS
V
GS
f = 1MHz
Drain - Source Voltage VDS (V)
= 0V
208 1204 16
0.2
0.1
-1
10
0.05
0.02
-2
10
10
Normalized Effective Transient Thermal Resistance
SINGLE
-4
-3
10
10
-2
Square Wave Pulse Duration (sec)
P
DM
- Duty cycle D = t1/t
- Per Unit Base = R
-1
10
0
10
1
10
t
1
10
t
2
2
= 800 /W
thJA
2
C
3
10
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