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SEMICONDUCTOR
TECHNICAL DATA
KML0D3P20V
P-Ch Trench MOSFET
Revision No : 0
General Description
It s Mainly Suitable for Load Switching Cell Phones, Battery Powered
Systems and Level-Shifter.
FEATURES
·V
DSS
=-20V, ID=-0.3A
·Drain-Soure ON Resistance
: R
DS(ON)
=1.2Ω @ V
GS
=-4.5V
: R
DS(ON)
=1.6Ω @ V
GS
=-2.5V
: R
DS(ON)
=2.7Ω @ V
GS
=-1.8V
MAXIMUM RATING (Ta=25℃)
Note 1) *Surface Mounted on FR4 Board, t≤5sec
CHARACTERISTIC SYMBOL P-Ch UNIT
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±6
V
Drain Current
DC @T
A
=25℃
ID*
-300
mA
DC @T
A
=85℃
-210
Pulsed
I
DP
-650
Source-Drain Diode Current
I
S
125
Drain Power Dissipation
PD*
150 mW
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Resistance, Junction to Ambient
R
thJA
*
446
℃/W
PIN CONNECTION (TOP VIEW)
D
3
Marking
3
Type Name
LB
2
G
1
S
2
1
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KML0D3P20V
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note 2) *Pulse test : Pulse width≤300㎲, Duty Cycle≤2%.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=-250μA, V
GS
=0V
-20 - - V
Drain Cut-off Current
I
DSS
VGS=0V, VDS=-16V
- -0.3 -100 nA
Gate Leakage Current
I
GSS
V
GS
=±4.5V, V
DS
=0V
-
±1.0 ±2.0 μA
Gate Threshold Voltage
V
th
VDS=V
GS, ID
=-250μA
-0.45 - -1.0
V
Drain-Source ON Resistance
R
DS(ON)
*
VGS=-4.5V, ID=-300mA
- 0.80 1.20
VGS=-2.5V, ID=-250mA
- 1.20 1.60
VGS=-1.8V, ID=-150mA
- 1.80 2.70
ON State Drain Current
I
D(ON)
*
VGS=4.5V, VDS=5V
700 - -
mA
VGS=-4.5V, VDS=-5V
-700 - -
Forward Transconductance
gfs* VDS=-10V, ID=-300mA
- 0.4 - S
Source-Drain Diode Forward Voltage
VSD* IS=-150mA, VGS=0V
- -0.8 -1.2 V
Dynamic
Total Gate Charge
Qg*
VDS=-10V, ID=-250mA, VGS=-4.5V
- 1500 -
pC
QgS*
- 150 -
Gate-Source Charge
Gate-Drain Charge
Qgd*
- 450 -
Turn-on Delay time
t
d(on)
*
VDD=-10V, VGS=-4.5V
I
D
=-200mA, R
G
=10Ω
- 5 -
Turn-off Delay time
t
d(off)
*
- 35 -
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KML0D3P20V
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